CN1213436A - 光学晶体的极化方法和配置 - Google Patents

光学晶体的极化方法和配置 Download PDF

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Publication number
CN1213436A
CN1213436A CN97192916A CN97192916A CN1213436A CN 1213436 A CN1213436 A CN 1213436A CN 97192916 A CN97192916 A CN 97192916A CN 97192916 A CN97192916 A CN 97192916A CN 1213436 A CN1213436 A CN 1213436A
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CN
China
Prior art keywords
crystal
light
conductivity
domain
ion exchange
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN97192916A
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English (en)
Chinese (zh)
Inventor
黑坎·卡尔森
冈纳·阿维德森
彼得·亨里克森
弗雷德里克·劳雷尔
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IDF INST FER OPTISK FORSKNING AB
Original Assignee
IDF INST FER OPTISK FORSKNING AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from SE9600140A external-priority patent/SE9600140D0/xx
Priority claimed from SE9604264A external-priority patent/SE9604264D0/xx
Application filed by IDF INST FER OPTISK FORSKNING AB filed Critical IDF INST FER OPTISK FORSKNING AB
Publication of CN1213436A publication Critical patent/CN1213436A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/355—Non-linear optics characterised by the materials used
    • G02F1/3558—Poled materials, e.g. with periodic poling; Fabrication of domain inverted structures, e.g. for quasi-phase-matching [QPM]
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/14—Phosphates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Nonlinear Science (AREA)
  • Inorganic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Polarising Elements (AREA)
CN97192916A 1996-01-12 1997-01-10 光学晶体的极化方法和配置 Pending CN1213436A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
SE9600140A SE9600140D0 (sv) 1996-01-12 1996-01-12 Processförfarande för optiska kristaller
SE96001409 1996-01-12
SE96042643 1996-11-19
SE9604264A SE9604264D0 (sv) 1996-11-19 1996-11-19 Icke-linjära kristaller

Publications (1)

Publication Number Publication Date
CN1213436A true CN1213436A (zh) 1999-04-07

Family

ID=26662476

Family Applications (1)

Application Number Title Priority Date Filing Date
CN97192916A Pending CN1213436A (zh) 1996-01-12 1997-01-10 光学晶体的极化方法和配置

Country Status (9)

Country Link
US (1) US5986798A (enExample)
EP (1) EP1015936B1 (enExample)
JP (1) JP2000503138A (enExample)
CN (1) CN1213436A (enExample)
AT (1) ATE327523T1 (enExample)
AU (1) AU733846B2 (enExample)
DE (1) DE69735956T2 (enExample)
IL (1) IL125303A (enExample)
WO (1) WO1997025648A1 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100405204C (zh) * 2003-08-21 2008-07-23 日本碍子株式会社 极化反转部的制造方法
CN101582293B (zh) * 2008-05-12 2012-05-30 台湾积体电路制造股份有限公司 内存元件及电源切断或启动程序中控制其字线信号的方法
CN104613879A (zh) * 2015-01-19 2015-05-13 无锡名谷科技有限公司 一种硅片厚度测量装置及测量方法
CN106353948A (zh) * 2016-09-29 2017-01-25 武汉工程大学 一种非线性光学晶体及其应用方法
CN110726673A (zh) * 2018-07-17 2020-01-24 中国科学院福建物质结构研究所 用于铁电晶体相变检测的光学探针及其检测方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL120203A (en) * 1997-02-12 2000-08-31 Israel Atomic Energy Comm Method of fabrication of an invertedly poled domain structure from a ferroelectric crystal
JP3999362B2 (ja) * 1998-07-13 2007-10-31 三菱電線工業株式会社 周期的分極反転構造を有する強誘電体結晶の製造方法
GB2354597A (en) * 1999-09-23 2001-03-28 Christopher Noel Pannell Ferroelectric acousto-optic devices
US6904066B2 (en) * 2001-11-13 2005-06-07 Yen-Chieh Huang Optical parametric oscillator with distributed feedback grating or distributing Bragg reflector
US6900928B2 (en) 2002-03-19 2005-05-31 Hc Photonics Corporation Method of patterning and fabricating poled dielectric microstructures within dielectric materials
US7133134B2 (en) * 2002-08-21 2006-11-07 The Board Of Trustees Of The Leland Stanford Junior University Method of measuring a physical function using a symmetric composite function
US6856393B2 (en) * 2002-08-21 2005-02-15 The Board Of Trustees Of The Leland Stanford University Method of measuring a physical function using a composite function which includes the physical function and an arbitrary reference function
US6982999B1 (en) * 2003-01-21 2006-01-03 Picarro,Inc. Multipass second harmonic generation
US7009750B1 (en) 2002-10-25 2006-03-07 Eclipse Energy Systems, Inc. Apparatus and methods for modulating refractive index
GB2424069B (en) * 2003-11-25 2007-11-14 Univ Leland Stanford Junior Method for determining the optical nonlinearity profile of a material
US7145714B2 (en) * 2004-07-26 2006-12-05 Advr, Inc. Segmented electrodes for poling of ferroelectric crystal materials
US20060280209A1 (en) * 2005-02-11 2006-12-14 Hans-Georg Treusch Beam combining methods and devices with high output intensity
JP5158319B2 (ja) * 2007-03-26 2013-03-06 株式会社リコー 波長変換素子、レーザ装置、画像形成装置及び表示装置
DE102017123755B4 (de) * 2017-10-12 2020-12-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Laserdiodenbarrens und Laserdiodenbarren
DE102018108636A1 (de) 2018-04-11 2019-10-17 Universität Paderborn Herstellung von Wellenleitern aus Materialien der KTP-Familie
US10809594B2 (en) * 2019-04-30 2020-10-20 Shandong University Kind of visible ultraviolet band optical frequency converter
CN117444381B (zh) * 2023-11-02 2024-06-04 深圳技术大学 一种基于飞秒激光直写技术制备铌酸锂晶体表面导电微结构的方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0409104B1 (en) * 1989-05-18 1996-05-01 Sony Corporation Method of controlling the domain of a nonlinear ferroelectric optics substrate
US5157754A (en) * 1990-04-25 1992-10-20 E. I. Du Pont De Nemours Wavelength conversion by quasi phase matching and the manufacture and use of optical articles therefor
US5879590A (en) * 1990-07-13 1999-03-09 North American Philips Corporation Low conductivity, doped KTIOPO4 and devices based thereon
JPH06242478A (ja) * 1993-02-18 1994-09-02 Fuji Photo Film Co Ltd 強誘電体のドメイン反転構造形成方法
JP3397433B2 (ja) * 1994-03-17 2003-04-14 パイオニア株式会社 分極反転層形成方法及び光波長変換素子
US5519802A (en) * 1994-05-09 1996-05-21 Deacon Research Method for making devices having a pattern poled structure and pattern poled structure devices
JPH086080A (ja) * 1994-06-16 1996-01-12 Eastman Kodak Co 反転された強誘電性ドメイン領域の形成方法
US5652674A (en) * 1994-08-31 1997-07-29 Matsushita Electric Industrial Co., Ltd. Method for manufacturing domain-inverted region, optical wavelength conversion device utilizing such domain-inverted region and method for fabricating such device
US5756263A (en) * 1995-05-30 1998-05-26 Eastman Kodak Company Method of inverting ferroelectric domains by application of controlled electric field
US5748361A (en) * 1995-10-13 1998-05-05 Eastman Kodak Company Ferroelectric crystal having inverted domain structure
US5875053A (en) * 1996-01-26 1999-02-23 Sdl, Inc. Periodic electric field poled crystal waveguides

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100405204C (zh) * 2003-08-21 2008-07-23 日本碍子株式会社 极化反转部的制造方法
CN101582293B (zh) * 2008-05-12 2012-05-30 台湾积体电路制造股份有限公司 内存元件及电源切断或启动程序中控制其字线信号的方法
CN104613879A (zh) * 2015-01-19 2015-05-13 无锡名谷科技有限公司 一种硅片厚度测量装置及测量方法
CN106353948A (zh) * 2016-09-29 2017-01-25 武汉工程大学 一种非线性光学晶体及其应用方法
CN110726673A (zh) * 2018-07-17 2020-01-24 中国科学院福建物质结构研究所 用于铁电晶体相变检测的光学探针及其检测方法
CN110726673B (zh) * 2018-07-17 2022-02-18 中国科学院福建物质结构研究所 用于铁电晶体相变检测的光学探针及其检测方法

Also Published As

Publication number Publication date
IL125303A (en) 2001-08-08
ATE327523T1 (de) 2006-06-15
JP2000503138A (ja) 2000-03-14
AU1325797A (en) 1997-08-01
IL125303A0 (en) 1999-03-12
EP1015936B1 (en) 2006-05-24
EP1015936A1 (en) 2000-07-05
WO1997025648A1 (en) 1997-07-17
DE69735956D1 (de) 2006-06-29
AU733846B2 (en) 2001-05-31
US5986798A (en) 1999-11-16
DE69735956T2 (de) 2007-05-10

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Address after: The Swedish Salter rounded to Bo

Applicant after: Boulter & Co.

Address before: Stockholm

Applicant before: Aktiebolaget IOF Institutet for optisk forskning

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Free format text: CORRECT: APPLICANT; FROM: AKTIEBOLAGET IDF INST. FER OPTISK FORSKNING TO: COBALT COMPANY

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