IL122429A - Electromagnetic wave detector - Google Patents
Electromagnetic wave detectorInfo
- Publication number
- IL122429A IL122429A IL12242997A IL12242997A IL122429A IL 122429 A IL122429 A IL 122429A IL 12242997 A IL12242997 A IL 12242997A IL 12242997 A IL12242997 A IL 12242997A IL 122429 A IL122429 A IL 122429A
- Authority
- IL
- Israel
- Prior art keywords
- detector
- detector element
- detectors
- connector
- common
- Prior art date
Links
- 239000000463 material Substances 0.000 claims abstract description 9
- 230000007246 mechanism Effects 0.000 claims abstract 6
- 239000011159 matrix material Substances 0.000 claims description 27
- 239000004020 conductor Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 238000001514 detection method Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008520 organization Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000002745 absorbent Effects 0.000 description 3
- 239000002250 absorbent Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/041—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00
- H01L25/043—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
- H01L27/1465—Infrared imagers of the hybrid type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9614851A FR2756666B1 (fr) | 1996-12-04 | 1996-12-04 | Detecteur d'ondes electromagnetiques |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL122429A0 IL122429A0 (en) | 1998-06-15 |
| IL122429A true IL122429A (en) | 2002-03-10 |
Family
ID=9498308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL12242997A IL122429A (en) | 1996-12-04 | 1997-12-03 | Electromagnetic wave detector |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6091126A (ja) |
| EP (1) | EP0849798B1 (ja) |
| JP (1) | JPH10223874A (ja) |
| CA (1) | CA2223539A1 (ja) |
| DE (1) | DE69735990T2 (ja) |
| FR (1) | FR2756666B1 (ja) |
| IL (1) | IL122429A (ja) |
| SG (1) | SG67447A1 (ja) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3542965B2 (ja) * | 1997-10-16 | 2004-07-14 | カリフォルニア インスティチュート オブ テクノロジー | デュアルバンド量子井戸赤外線センシングアレイ |
| US6271537B1 (en) * | 1998-11-20 | 2001-08-07 | California Institute Of Technology | Slotted quantum well sensor |
| WO2001048831A1 (en) | 1999-12-24 | 2001-07-05 | Bae Systems Information And Electronic Systems Integration, Inc. | Multi-color, multi-focal plane optical detector |
| US6875975B2 (en) * | 1999-12-24 | 2005-04-05 | Bae Systems Information And Electronic Systems Integration Inc | Multi-color, multi-focal plane optical detector |
| US7291858B2 (en) * | 1999-12-24 | 2007-11-06 | Bae Systems Information And Electronic Systems Integration Inc. | QWIP with tunable spectral response |
| FR2808926B1 (fr) * | 2000-05-12 | 2003-08-01 | Thomson Csf | Detecteur optique polarimetrique |
| FR2808925B1 (fr) * | 2000-05-12 | 2003-08-08 | Thomson Csf | Detecteur optique bi-spectral |
| FR2811808B1 (fr) | 2000-07-11 | 2002-10-25 | Thomson Csf | Dispositif d'auto-compensation pour detecteurs soustractifs |
| FR2855653B1 (fr) * | 2003-05-27 | 2005-10-21 | Thales Sa | Structure amorphe de couplage optique pour detecteur d'ondes electromagnetiques et detecteur associe |
| FR2855654B1 (fr) * | 2003-05-27 | 2006-03-03 | Thales Sa | Detecteur d'ondes electromagnetiques avec surface de couplage optique comprenant des motifs lamellaires |
| FR2863774B1 (fr) * | 2003-12-16 | 2006-03-03 | Thales Sa | Photodetecteur a concentration de champ proche |
| FR2915833B1 (fr) * | 2007-05-04 | 2010-03-12 | Thales Sa | Detecteur matriciel d'impulsions laser avec sommation rapide. |
| DE102008006987A1 (de) | 2008-01-31 | 2009-08-06 | Osram Opto Semiconductors Gmbh | Strahlungsempfänger und Verfahren zur Herstellung eines Strahlungsempfängers |
| FR2937791B1 (fr) * | 2008-10-24 | 2010-11-26 | Thales Sa | Dispositif d'imagerie polarimetrique optimise par rapport au contraste de polarisation |
| FR2937792B1 (fr) * | 2008-10-24 | 2011-03-18 | Thales Sa | Dispositif d'imagerie multispectral a base de multi-puits quantiques |
| FR2940463B1 (fr) * | 2008-12-23 | 2012-07-27 | Thales Sa | Systeme d'imagerie passive equipe d'un telemetre |
| JP5533294B2 (ja) * | 2010-06-08 | 2014-06-25 | 富士通株式会社 | イメージセンサ及び撮像装置 |
| DE102012007677B4 (de) | 2012-04-17 | 2015-05-07 | Airbus Defence and Space GmbH | Optische Sensoranordnung |
| KR101304094B1 (ko) * | 2012-05-23 | 2013-09-05 | 서울대학교산학협력단 | 플래시 메모리의 구조를 이용한 전자파 측정 장치 및 이를 이용한 전자파 측정 방법 |
| US11282887B2 (en) | 2019-04-11 | 2022-03-22 | Hrl Laboratories, Llc | Simultaneous dual-band image sensors |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6193923A (ja) * | 1984-10-15 | 1986-05-12 | Sharp Corp | 色温度の検出回路 |
| CA1314614C (en) * | 1988-06-06 | 1993-03-16 | Clyde George Bethea | Quantum-well radiation detector |
| FR2653229B1 (fr) * | 1989-10-12 | 1992-01-17 | Thomson Csf | Detecteur capacitif d'onde electromagnetique. |
| FR2655434B1 (fr) * | 1989-12-05 | 1992-02-28 | Thomson Csf | Dispositif optique a puits quantiques et procede de realisation. |
| GB2248964A (en) * | 1990-10-17 | 1992-04-22 | Philips Electronic Associated | Plural-wavelength infrared detector devices |
| FR2670006B1 (fr) * | 1990-11-29 | 1993-03-12 | Thomson Csf | Bolometre electronique a puits quantique et application a un detecteur de rayonnements. |
| FR2678774B1 (fr) * | 1991-07-05 | 1998-07-10 | Thomson Csf | Detecteur d'ondes electromagnetiques. |
| FR2693594B1 (fr) * | 1992-07-07 | 1994-08-26 | Thomson Csf | Détecteur d'ondes électromagnétiques à puits quantiques. |
| FR2729789B1 (fr) * | 1993-09-10 | 1998-03-20 | Thomson Csf | Detecteur a puits quantique et procede de realisation |
| FR2718571B1 (fr) * | 1994-04-08 | 1996-05-15 | Thomson Csf | Composant hybride semiconducteur. |
| US5552603A (en) * | 1994-09-15 | 1996-09-03 | Martin Marietta Corporation | Bias and readout for multicolor quantum well detectors |
| FR2726691B1 (fr) * | 1994-11-08 | 1997-01-24 | Thomson Csf | Photodetecteur de grande dimension et procede de realisation d'un tel photodetecteur |
| FR2726903B1 (fr) * | 1994-11-10 | 1996-12-06 | Thomson Csf | Ecartometre integre |
| US5731621A (en) * | 1996-03-19 | 1998-03-24 | Santa Barbara Research Center | Three band and four band multispectral structures having two simultaneous signal outputs |
-
1996
- 1996-12-04 FR FR9614851A patent/FR2756666B1/fr not_active Expired - Fee Related
-
1997
- 1997-12-01 SG SG1997004211A patent/SG67447A1/en unknown
- 1997-12-02 DE DE69735990T patent/DE69735990T2/de not_active Expired - Lifetime
- 1997-12-02 CA CA002223539A patent/CA2223539A1/fr not_active Abandoned
- 1997-12-02 EP EP97402894A patent/EP0849798B1/fr not_active Expired - Lifetime
- 1997-12-03 IL IL12242997A patent/IL122429A/en not_active IP Right Cessation
- 1997-12-04 US US08/984,944 patent/US6091126A/en not_active Expired - Lifetime
- 1997-12-04 JP JP9366560A patent/JPH10223874A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10223874A (ja) | 1998-08-21 |
| DE69735990D1 (de) | 2006-07-06 |
| SG67447A1 (en) | 1999-09-21 |
| DE69735990T2 (de) | 2007-01-04 |
| US6091126A (en) | 2000-07-18 |
| CA2223539A1 (fr) | 1998-06-04 |
| FR2756666A1 (fr) | 1998-06-05 |
| EP0849798A1 (fr) | 1998-06-24 |
| IL122429A0 (en) | 1998-06-15 |
| FR2756666B1 (fr) | 1999-02-19 |
| EP0849798B1 (fr) | 2006-05-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FF | Patent granted | ||
| KB | Patent renewed | ||
| KB | Patent renewed | ||
| HC | Change of name of proprietor(s) |
Owner name: THALES Free format text: FORMER NAME:THOMSON-CSF |
|
| KB | Patent renewed | ||
| KB | Patent renewed | ||
| MM9K | Patent not in force due to non-payment of renewal fees |