IE54111B1 - Laser treatment of thyristor to provide overvoltage self-protection - Google Patents
Laser treatment of thyristor to provide overvoltage self-protectionInfo
- Publication number
- IE54111B1 IE54111B1 IE266/83A IE26683A IE54111B1 IE 54111 B1 IE54111 B1 IE 54111B1 IE 266/83 A IE266/83 A IE 266/83A IE 26683 A IE26683 A IE 26683A IE 54111 B1 IE54111 B1 IE 54111B1
- Authority
- IE
- Ireland
- Prior art keywords
- thyristor
- laser radiation
- pulse
- region
- process according
- Prior art date
Links
- 238000013532 laser treatment Methods 0.000 title 1
- 238000000034 method Methods 0.000 claims abstract description 12
- 230000000903 blocking effect Effects 0.000 claims description 9
- 239000010979 ruby Substances 0.000 claims description 5
- 229910001750 ruby Inorganic materials 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 238000010304 firing Methods 0.000 claims description 2
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 claims description 2
- 230000005855 radiation Effects 0.000 claims 10
- 230000001066 destructive effect Effects 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000000700 radioactive tracer Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/211—Thyristors having built-in localised breakdown or breakover regions, e.g. self-protected against destructive spontaneous firing
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
- Power Conversion In General (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US35710682A | 1982-03-11 | 1982-03-11 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IE830266L IE830266L (en) | 1983-09-11 |
| IE54111B1 true IE54111B1 (en) | 1989-06-21 |
Family
ID=23404319
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IE266/83A IE54111B1 (en) | 1982-03-11 | 1983-02-10 | Laser treatment of thyristor to provide overvoltage self-protection |
Country Status (7)
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4514898A (en) * | 1983-02-18 | 1985-05-07 | Westinghouse Electric Corp. | Method of making a self protected thyristor |
| EP0310836A3 (de) * | 1987-10-08 | 1989-06-14 | Siemens Aktiengesellschaft | Halbleiterbauelement mit einem planaren pn-Übergang |
| JPH0680820B2 (ja) * | 1989-10-16 | 1994-10-12 | 株式会社東芝 | 過電圧保護機能付半導体装置及びその製造方法 |
| DE4215378C1 (de) * | 1992-05-11 | 1993-09-30 | Siemens Ag | Thyristor mit Durchbruchbereich |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4087834A (en) * | 1976-03-22 | 1978-05-02 | General Electric Company | Self-protecting semiconductor device |
| US4075037A (en) * | 1976-05-17 | 1978-02-21 | Westinghouse Electric Corporation | Tailoring of recovery charge in power diodes and thyristors by irradiation |
| DE2928685A1 (de) * | 1978-07-20 | 1980-01-31 | Electric Power Res Inst | Thyristor mit gesteuertem strom bei spannungsdurchbruch und verfahren zur begrenzung des durchbruchstroms in durchlassrichtung durch einen thyristor |
| JPS55115364A (en) * | 1979-02-28 | 1980-09-05 | Nec Corp | Manufacturing method of semiconductor device |
| JPS5643665A (en) * | 1979-09-18 | 1981-04-22 | Minolta Camera Co Ltd | Electrophotographic receptor |
-
1983
- 1983-02-10 IE IE266/83A patent/IE54111B1/en unknown
- 1983-02-14 CA CA000421554A patent/CA1191974A/en not_active Expired
- 1983-02-19 IN IN201/CAL/83A patent/IN156292B/en unknown
- 1983-03-04 DE DE8383102146T patent/DE3374972D1/de not_active Expired
- 1983-03-04 EP EP83102146A patent/EP0088967B1/en not_active Expired
- 1983-03-08 BR BR8301120A patent/BR8301120A/pt unknown
- 1983-03-10 JP JP58038398A patent/JPS58166767A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| IN156292B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1985-06-15 |
| BR8301120A (pt) | 1983-11-22 |
| DE3374972D1 (en) | 1988-01-28 |
| EP0088967B1 (en) | 1987-12-16 |
| JPS58166767A (ja) | 1983-10-01 |
| EP0088967A3 (en) | 1985-12-27 |
| IE830266L (en) | 1983-09-11 |
| EP0088967A2 (en) | 1983-09-21 |
| CA1191974A (en) | 1985-08-13 |
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