BR8301120A - Processo para fabricacao de tiristor com protecao contra sobretensao - Google Patents
Processo para fabricacao de tiristor com protecao contra sobretensaoInfo
- Publication number
- BR8301120A BR8301120A BR8301120A BR8301120A BR8301120A BR 8301120 A BR8301120 A BR 8301120A BR 8301120 A BR8301120 A BR 8301120A BR 8301120 A BR8301120 A BR 8301120A BR 8301120 A BR8301120 A BR 8301120A
- Authority
- BR
- Brazil
- Prior art keywords
- protection against
- against overvoltage
- thyristor
- manufacturing
- manufacturing thyristor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/211—Thyristors having built-in localised breakdown or breakover regions, e.g. self-protected against destructive spontaneous firing
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
- Power Conversion In General (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US35710682A | 1982-03-11 | 1982-03-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
BR8301120A true BR8301120A (pt) | 1983-11-22 |
Family
ID=23404319
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR8301120A BR8301120A (pt) | 1982-03-11 | 1983-03-08 | Processo para fabricacao de tiristor com protecao contra sobretensao |
Country Status (7)
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4514898A (en) * | 1983-02-18 | 1985-05-07 | Westinghouse Electric Corp. | Method of making a self protected thyristor |
EP0310836A3 (de) * | 1987-10-08 | 1989-06-14 | Siemens Aktiengesellschaft | Halbleiterbauelement mit einem planaren pn-Übergang |
JPH0680820B2 (ja) * | 1989-10-16 | 1994-10-12 | 株式会社東芝 | 過電圧保護機能付半導体装置及びその製造方法 |
DE4215378C1 (de) * | 1992-05-11 | 1993-09-30 | Siemens Ag | Thyristor mit Durchbruchbereich |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4087834A (en) * | 1976-03-22 | 1978-05-02 | General Electric Company | Self-protecting semiconductor device |
US4075037A (en) * | 1976-05-17 | 1978-02-21 | Westinghouse Electric Corporation | Tailoring of recovery charge in power diodes and thyristors by irradiation |
DE2928685A1 (de) * | 1978-07-20 | 1980-01-31 | Electric Power Res Inst | Thyristor mit gesteuertem strom bei spannungsdurchbruch und verfahren zur begrenzung des durchbruchstroms in durchlassrichtung durch einen thyristor |
JPS55115364A (en) * | 1979-02-28 | 1980-09-05 | Nec Corp | Manufacturing method of semiconductor device |
JPS5643665A (en) * | 1979-09-18 | 1981-04-22 | Minolta Camera Co Ltd | Electrophotographic receptor |
-
1983
- 1983-02-10 IE IE266/83A patent/IE54111B1/en unknown
- 1983-02-14 CA CA000421554A patent/CA1191974A/en not_active Expired
- 1983-02-19 IN IN201/CAL/83A patent/IN156292B/en unknown
- 1983-03-04 DE DE8383102146T patent/DE3374972D1/de not_active Expired
- 1983-03-04 EP EP83102146A patent/EP0088967B1/en not_active Expired
- 1983-03-08 BR BR8301120A patent/BR8301120A/pt unknown
- 1983-03-10 JP JP58038398A patent/JPS58166767A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
IN156292B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1985-06-15 |
DE3374972D1 (en) | 1988-01-28 |
EP0088967B1 (en) | 1987-12-16 |
JPS58166767A (ja) | 1983-10-01 |
EP0088967A3 (en) | 1985-12-27 |
IE830266L (en) | 1983-09-11 |
EP0088967A2 (en) | 1983-09-21 |
IE54111B1 (en) | 1989-06-21 |
CA1191974A (en) | 1985-08-13 |
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