DE3374972D1 - Laser treatment of thyristor to provide overvoltage self-protection - Google Patents

Laser treatment of thyristor to provide overvoltage self-protection

Info

Publication number
DE3374972D1
DE3374972D1 DE8383102146T DE3374972T DE3374972D1 DE 3374972 D1 DE3374972 D1 DE 3374972D1 DE 8383102146 T DE8383102146 T DE 8383102146T DE 3374972 T DE3374972 T DE 3374972T DE 3374972 D1 DE3374972 D1 DE 3374972D1
Authority
DE
Germany
Prior art keywords
thyristor
protection
laser treatment
provide overvoltage
overvoltage self
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383102146T
Other languages
German (de)
English (en)
Inventor
John X Przybysz
Richard J Fiedor
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Application granted granted Critical
Publication of DE3374972D1 publication Critical patent/DE3374972D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/211—Thyristors having built-in localised breakdown or breakover regions, e.g. self-protected against destructive spontaneous firing

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Power Conversion In General (AREA)
DE8383102146T 1982-03-11 1983-03-04 Laser treatment of thyristor to provide overvoltage self-protection Expired DE3374972D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US35710682A 1982-03-11 1982-03-11

Publications (1)

Publication Number Publication Date
DE3374972D1 true DE3374972D1 (en) 1988-01-28

Family

ID=23404319

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383102146T Expired DE3374972D1 (en) 1982-03-11 1983-03-04 Laser treatment of thyristor to provide overvoltage self-protection

Country Status (7)

Country Link
EP (1) EP0088967B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS58166767A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
BR (1) BR8301120A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1191974A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3374972D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IE (1) IE54111B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IN (1) IN156292B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4514898A (en) * 1983-02-18 1985-05-07 Westinghouse Electric Corp. Method of making a self protected thyristor
EP0310836A3 (de) * 1987-10-08 1989-06-14 Siemens Aktiengesellschaft Halbleiterbauelement mit einem planaren pn-Übergang
JPH0680820B2 (ja) * 1989-10-16 1994-10-12 株式会社東芝 過電圧保護機能付半導体装置及びその製造方法
DE4215378C1 (de) * 1992-05-11 1993-09-30 Siemens Ag Thyristor mit Durchbruchbereich

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4087834A (en) * 1976-03-22 1978-05-02 General Electric Company Self-protecting semiconductor device
US4075037A (en) * 1976-05-17 1978-02-21 Westinghouse Electric Corporation Tailoring of recovery charge in power diodes and thyristors by irradiation
DE2928685A1 (de) * 1978-07-20 1980-01-31 Electric Power Res Inst Thyristor mit gesteuertem strom bei spannungsdurchbruch und verfahren zur begrenzung des durchbruchstroms in durchlassrichtung durch einen thyristor
JPS55115364A (en) * 1979-02-28 1980-09-05 Nec Corp Manufacturing method of semiconductor device
JPS5643665A (en) * 1979-09-18 1981-04-22 Minolta Camera Co Ltd Electrophotographic receptor

Also Published As

Publication number Publication date
IN156292B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1985-06-15
BR8301120A (pt) 1983-11-22
EP0088967B1 (en) 1987-12-16
JPS58166767A (ja) 1983-10-01
EP0088967A3 (en) 1985-12-27
IE830266L (en) 1983-09-11
EP0088967A2 (en) 1983-09-21
IE54111B1 (en) 1989-06-21
CA1191974A (en) 1985-08-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee