ID27451A - Film-film tipis ferroelektrik dari tetragonal yang dikurangi - Google Patents
Film-film tipis ferroelektrik dari tetragonal yang dikurangiInfo
- Publication number
- ID27451A ID27451A IDW20010696A ID20010696A ID27451A ID 27451 A ID27451 A ID 27451A ID W20010696 A IDW20010696 A ID W20010696A ID 20010696 A ID20010696 A ID 20010696A ID 27451 A ID27451 A ID 27451A
- Authority
- ID
- Indonesia
- Prior art keywords
- tetragonals
- reduced
- thin films
- ferroelectric thin
- ferroelectric
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/516—Insulating materials associated therewith with at least one ferroelectric layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
- H01L28/56—Capacitors with a dielectric comprising a perovskite structure material the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16077898A | 1998-09-24 | 1998-09-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
ID27451A true ID27451A (id) | 2001-04-12 |
Family
ID=22578406
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IDW20010696A ID27451A (id) | 1998-09-24 | 1999-09-24 | Film-film tipis ferroelektrik dari tetragonal yang dikurangi |
Country Status (10)
Country | Link |
---|---|
EP (1) | EP1127378A1 (id) |
JP (1) | JP2002525876A (id) |
KR (1) | KR20010075336A (id) |
CN (1) | CN1319256A (id) |
AU (1) | AU6161599A (id) |
CA (1) | CA2343129A1 (id) |
ID (1) | ID27451A (id) |
MX (1) | MXPA01002814A (id) |
TW (1) | TW445647B (id) |
WO (1) | WO2000017936A1 (id) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3791614B2 (ja) | 2002-10-24 | 2006-06-28 | セイコーエプソン株式会社 | 強誘電体膜、強誘電体メモリ装置、圧電素子、半導体素子、圧電アクチュエータ、液体噴射ヘッド及びプリンタ |
JP2006024748A (ja) * | 2004-07-08 | 2006-01-26 | Fujitsu Ltd | 強誘電体キャパシタをもつ半導体装置及びその製造方法 |
JP5103706B2 (ja) * | 2004-07-30 | 2012-12-19 | 富士通株式会社 | 強誘電体キャパシタをもつ半導体装置及びその製造方法 |
JP4303209B2 (ja) | 2005-02-04 | 2009-07-29 | 富士通株式会社 | 強誘電体素子及び強誘電体素子の製造方法 |
JP4257537B2 (ja) | 2005-06-02 | 2009-04-22 | セイコーエプソン株式会社 | 強誘電体層の製造方法、電子機器の製造方法、強誘電体メモリ装置の製造方法、圧電素子の製造方法、およびインクジェット式記録ヘッドの製造方法 |
JP6036460B2 (ja) * | 2013-03-26 | 2016-11-30 | 三菱マテリアル株式会社 | PNbZT強誘電体薄膜の形成方法 |
TWI739051B (zh) | 2018-12-13 | 2021-09-11 | 財團法人工業技術研究院 | 鐵電記憶體 |
KR102293876B1 (ko) * | 2019-12-10 | 2021-08-27 | 브이메모리 주식회사 | 변동 저저항 라인 기반 전자 소자 및 이의 제어 방법 |
TWI744784B (zh) | 2020-02-03 | 2021-11-01 | 財團法人工業技術研究院 | 鐵電記憶體及其製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5270298A (en) * | 1992-03-05 | 1993-12-14 | Bell Communications Research, Inc. | Cubic metal oxide thin film epitaxially grown on silicon |
US5248564A (en) * | 1992-12-09 | 1993-09-28 | Bell Communications Research, Inc. | C-axis perovskite thin films grown on silicon dioxide |
US5777356A (en) * | 1996-01-03 | 1998-07-07 | Bell Communications Research, Inc. | Platinum-free ferroelectric memory cell with intermetallic barrier layer and method of making same |
-
1999
- 1999-09-24 KR KR1020017003753A patent/KR20010075336A/ko not_active Application Discontinuation
- 1999-09-24 EP EP99948440A patent/EP1127378A1/en not_active Withdrawn
- 1999-09-24 CN CN99811267A patent/CN1319256A/zh active Pending
- 1999-09-24 ID IDW20010696A patent/ID27451A/id unknown
- 1999-09-24 WO PCT/US1999/022178 patent/WO2000017936A1/en not_active Application Discontinuation
- 1999-09-24 AU AU61615/99A patent/AU6161599A/en not_active Abandoned
- 1999-09-24 JP JP2000571502A patent/JP2002525876A/ja active Pending
- 1999-09-24 CA CA002343129A patent/CA2343129A1/en not_active Abandoned
- 1999-09-24 MX MXPA01002814A patent/MXPA01002814A/es unknown
- 1999-11-20 TW TW088116395A patent/TW445647B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP1127378A1 (en) | 2001-08-29 |
AU6161599A (en) | 2000-04-10 |
KR20010075336A (ko) | 2001-08-09 |
MXPA01002814A (es) | 2002-04-08 |
TW445647B (en) | 2001-07-11 |
CA2343129A1 (en) | 2000-03-30 |
WO2000017936A1 (en) | 2000-03-30 |
CN1319256A (zh) | 2001-10-24 |
JP2002525876A (ja) | 2002-08-13 |
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