HUE034756T2 - Több mélységélességû fényérzékelõ eszköz, annak rendszere, mélységélesség-növelõ eljárás és optikai leképezõrendszer - Google Patents
Több mélységélességû fényérzékelõ eszköz, annak rendszere, mélységélesség-növelõ eljárás és optikai leképezõrendszer Download PDFInfo
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- HUE034756T2 HUE034756T2 HUE11868080A HUE11868080A HUE034756T2 HU E034756 T2 HUE034756 T2 HU E034756T2 HU E11868080 A HUE11868080 A HU E11868080A HU E11868080 A HUE11868080 A HU E11868080A HU E034756 T2 HUE034756 T2 HU E034756T2
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Classifications
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
- H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
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- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
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- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
- H04N25/705—Pixels for depth measurement, e.g. RGBZ
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Color Television Image Signal Generators (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Apparatus Associated With Microorganisms And Enzymes (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2011/076338 WO2012174752A1 (zh) | 2011-06-24 | 2011-06-24 | 多景深感光器件、系统、景深扩展方法及光学成像系统 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| HUE034756T2 true HUE034756T2 (hu) | 2018-02-28 |
Family
ID=47422011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| HUE11868080A HUE034756T2 (hu) | 2011-06-24 | 2011-06-24 | Több mélységélességû fényérzékelõ eszköz, annak rendszere, mélységélesség-növelõ eljárás és optikai leképezõrendszer |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US9369641B2 (hu) |
| EP (1) | EP2725616B1 (hu) |
| JP (1) | JP2014520397A (hu) |
| KR (1) | KR101572020B1 (hu) |
| CA (1) | CA2840267C (hu) |
| ES (1) | ES2645020T3 (hu) |
| HU (1) | HUE034756T2 (hu) |
| PL (1) | PL2725616T3 (hu) |
| RU (1) | RU2609106C2 (hu) |
| WO (1) | WO2012174752A1 (hu) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7442629B2 (en) | 2004-09-24 | 2008-10-28 | President & Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
| US7057256B2 (en) | 2001-05-25 | 2006-06-06 | President & Fellows Of Harvard College | Silicon-based visible and near-infrared optoelectric devices |
| US9911781B2 (en) | 2009-09-17 | 2018-03-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
| US9673243B2 (en) | 2009-09-17 | 2017-06-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
| US8692198B2 (en) | 2010-04-21 | 2014-04-08 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
| EP2509107A4 (en) * | 2010-06-01 | 2013-07-31 | Boly Media Comm Shenzhen Co | MULTISPEKTRAL LIGHT-SENSITIVE DEVICE |
| EP2583312A2 (en) | 2010-06-18 | 2013-04-24 | Sionyx, Inc. | High speed photosensitive devices and associated methods |
| US9496308B2 (en) | 2011-06-09 | 2016-11-15 | Sionyx, Llc | Process module for increasing the response of backside illuminated photosensitive imagers and associated methods |
| US20130016203A1 (en) | 2011-07-13 | 2013-01-17 | Saylor Stephen D | Biometric imaging devices and associated methods |
| US9064764B2 (en) | 2012-03-22 | 2015-06-23 | Sionyx, Inc. | Pixel isolation elements, devices, and associated methods |
| JP6466346B2 (ja) | 2013-02-15 | 2019-02-06 | サイオニクス、エルエルシー | アンチブルーミング特性を有するハイダイナミックレンジｃｍｏｓ画像センサおよび関連づけられた方法 |
| US9939251B2 (en) | 2013-03-15 | 2018-04-10 | Sionyx, Llc | Three dimensional imaging utilizing stacked imager devices and associated methods |
| EP2974302B1 (en) * | 2013-03-15 | 2019-05-01 | SiOnyx, LLC | Three dimensional imaging utilizing stacked imager devices and associated methods |
| WO2014209421A1 (en) | 2013-06-29 | 2014-12-31 | Sionyx, Inc. | Shallow trench textured regions and associated methods |
| US10136107B2 (en) * | 2013-11-21 | 2018-11-20 | Semiconductor Components Industries, Llc | Imaging systems with visible light sensitive pixels and infrared light sensitive pixels |
| JP6633268B2 (ja) * | 2014-09-03 | 2020-01-22 | グローリー株式会社 | センサモジュール及び紙葉類処理装置 |
| CN107409184B (zh) * | 2015-03-13 | 2020-09-18 | 索尼半导体解决方案公司 | 固态成像元件、驱动方法以及电子设备 |
| JP2017112169A (ja) | 2015-12-15 | 2017-06-22 | ソニー株式会社 | イメージセンサ、撮像システム及びイメージセンサの製造方法 |
| WO2019021439A1 (ja) * | 2017-07-27 | 2019-01-31 | マクセル株式会社 | 撮像素子、撮像装置、および距離画像の取得方法 |
| EP3474328B1 (en) | 2017-10-20 | 2021-09-29 | Samsung Electronics Co., Ltd. | Combination sensors and electronic devices |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5737336A (en) * | 1980-08-19 | 1982-03-01 | Asahi Optical Co Ltd | Automatic focus detector for camera |
| JPS61135280A (ja) * | 1984-12-06 | 1986-06-23 | Toshiba Corp | 三次元撮像素子 |
| JPH10150603A (ja) * | 1996-11-15 | 1998-06-02 | Nikon Corp | 超小型電子カメラ |
| JP2002232789A (ja) * | 2001-02-05 | 2002-08-16 | Univ Tokyo | 撮像方法及び撮像装置 |
| US6555854B2 (en) * | 2001-04-25 | 2003-04-29 | Umax Data Systems Inc. | Charge coupled device with multi-focus lengths |
| US6783900B2 (en) * | 2002-05-13 | 2004-08-31 | Micron Technology, Inc. | Color filter imaging array and method of formation |
| KR20040038743A (ko) * | 2002-10-29 | 2004-05-08 | 세이코 프리씨존 인크. | 표본 화상 데이터 처리 방법, 표본 검사 시스템 및 표본검사 방법 |
| JP4578797B2 (ja) * | 2003-11-10 | 2010-11-10 | パナソニック株式会社 | 撮像装置 |
| JP2005258995A (ja) * | 2004-03-15 | 2005-09-22 | Natl Rehabilitation Center For The Disabled | 認知機能障害者用支援装置 |
| JP4515796B2 (ja) * | 2004-03-17 | 2010-08-04 | 株式会社日立国際電気 | 撮像装置 |
| JP2005268609A (ja) | 2004-03-19 | 2005-09-29 | Fuji Photo Film Co Ltd | 多層積層型多画素撮像素子及びテレビカメラ |
| JP2006005762A (ja) * | 2004-06-18 | 2006-01-05 | Sharp Corp | 画像入力装置およびそれを備えた携帯情報端末装置 |
| KR100665177B1 (ko) * | 2005-05-25 | 2007-01-09 | 삼성전기주식회사 | 반도체 감광 디바이스용 이미지 센서 및 이를 이용한이미지 처리 장치 |
| JP4911445B2 (ja) | 2005-06-29 | 2012-04-04 | 富士フイルム株式会社 | 有機と無機のハイブリッド光電変換素子 |
| JP4384198B2 (ja) * | 2007-04-03 | 2009-12-16 | シャープ株式会社 | 固体撮像装置およびその製造方法、電子情報機器 |
| EP2432015A1 (en) * | 2007-04-18 | 2012-03-21 | Invisage Technologies, Inc. | Materials, systems and methods for optoelectronic devices |
| CN101345248B (zh) | 2007-07-09 | 2010-07-14 | 博立码杰通讯(深圳)有限公司 | 多光谱感光器件及其制作方法 |
| CN101740587B (zh) * | 2008-11-05 | 2012-08-29 | 博立码杰通讯(深圳)有限公司 | 多光谱感光器件及其制作方法 |
| JP5365221B2 (ja) * | 2009-01-29 | 2013-12-11 | ソニー株式会社 | 固体撮像装置、その製造方法および撮像装置 |
| CN101807590B (zh) * | 2009-02-16 | 2013-03-27 | 博立码杰通讯(深圳)有限公司 | 多光谱感光器件 |
| CN101834974B (zh) * | 2009-03-09 | 2013-12-18 | 博立码杰通讯(深圳)有限公司 | 一种多光谱感光器件及其采样方法 |
| TW201119019A (en) * | 2009-04-30 | 2011-06-01 | Corning Inc | CMOS image sensor on stacked semiconductor-on-insulator substrate and process for making same |
| JP2011049524A (ja) * | 2009-07-27 | 2011-03-10 | Sony Corp | 固体撮像素子および固体撮像素子の製造方法 |
| JP4547462B1 (ja) * | 2009-11-16 | 2010-09-22 | アキュートロジック株式会社 | 撮像素子、撮像素子の駆動装置、撮像素子の駆動方法、画像処理装置、プログラム、及び、撮像装置 |
| CN102244083B (zh) * | 2010-05-13 | 2015-08-26 | 博立多媒体控股有限公司 | 一种混合多光谱感光象素组、感光器件、及感光系统 |
| CN102263114B (zh) * | 2010-05-24 | 2015-06-17 | 博立多媒体控股有限公司 | 多景深感光器件、系统、景深扩展方法及光学成像系统 |
| JP6027832B2 (ja) * | 2012-09-21 | 2016-11-16 | オリンパス株式会社 | 撮像装置 |
-
2011
- 2011-06-24 US US14/128,921 patent/US9369641B2/en not_active Expired - Fee Related
- 2011-06-24 RU RU2014102161A patent/RU2609106C2/ru not_active Application Discontinuation
- 2011-06-24 CA CA2840267A patent/CA2840267C/en not_active Expired - Fee Related
- 2011-06-24 PL PL11868080T patent/PL2725616T3/pl unknown
- 2011-06-24 KR KR1020147000198A patent/KR101572020B1/ko active IP Right Grant
- 2011-06-24 JP JP2014516163A patent/JP2014520397A/ja active Pending
- 2011-06-24 EP EP11868080.0A patent/EP2725616B1/en not_active Not-in-force
- 2011-06-24 WO PCT/CN2011/076338 patent/WO2012174752A1/zh active Application Filing
- 2011-06-24 ES ES11868080.0T patent/ES2645020T3/es active Active
- 2011-06-24 HU HUE11868080A patent/HUE034756T2/hu unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CA2840267A1 (en) | 2012-12-27 |
| US20140183337A1 (en) | 2014-07-03 |
| EP2725616B1 (en) | 2017-07-26 |
| KR101572020B1 (ko) | 2015-11-26 |
| EP2725616A1 (en) | 2014-04-30 |
| RU2609106C2 (ru) | 2017-01-30 |
| EP2725616A4 (en) | 2015-03-18 |
| RU2014102161A (ru) | 2015-07-27 |
| ES2645020T3 (es) | 2017-12-01 |
| JP2014520397A (ja) | 2014-08-21 |
| PL2725616T3 (pl) | 2018-01-31 |
| WO2012174752A1 (zh) | 2012-12-27 |
| US9369641B2 (en) | 2016-06-14 |
| KR20140041679A (ko) | 2014-04-04 |
| CA2840267C (en) | 2017-11-14 |
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