HU0000710D0 - Surface passivation method for measuring life time of minority carrier of semiconductors - Google Patents

Surface passivation method for measuring life time of minority carrier of semiconductors

Info

Publication number
HU0000710D0
HU0000710D0 HU0000710A HUP0000710A HU0000710D0 HU 0000710 D0 HU0000710 D0 HU 0000710D0 HU 0000710 A HU0000710 A HU 0000710A HU P0000710 A HUP0000710 A HU P0000710A HU 0000710 D0 HU0000710 D0 HU 0000710D0
Authority
HU
Hungary
Prior art keywords
semiconductors
life time
minority carrier
surface passivation
passivation method
Prior art date
Application number
HU0000710A
Other languages
English (en)
Inventor
Tibor Pavelka
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to HU0000710A priority Critical patent/HU227170B1/hu
Publication of HU0000710D0 publication Critical patent/HU0000710D0/hu
Priority to PCT/HU2001/000018 priority patent/WO2001061745A2/en
Priority to DE10190639T priority patent/DE10190639B3/de
Priority to US09/958,172 priority patent/US6653850B2/en
Priority to GB0122713A priority patent/GB2370155A/en
Priority to JP2001560440A priority patent/JP2003523628A/ja
Publication of HUP0000710A2 publication Critical patent/HUP0000710A2/hu
Publication of HUP0000710A3 publication Critical patent/HUP0000710A3/hu
Publication of HU227170B1 publication Critical patent/HU227170B1/hu

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2648—Characterising semiconductor materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/265—Contactless testing
    • G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
HU0000710A 2000-02-17 2000-02-17 Surface passivation method and arrangement for measuring life time of minority carrier of semiconductors HU227170B1 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
HU0000710A HU227170B1 (en) 2000-02-17 2000-02-17 Surface passivation method and arrangement for measuring life time of minority carrier of semiconductors
PCT/HU2001/000018 WO2001061745A2 (en) 2000-02-17 2001-02-15 Surface passivation method and arrangement for measuring the lifetime of minority carriers in semiconductors
DE10190639T DE10190639B3 (de) 2000-02-17 2001-02-15 Oberflächenpassivierungs-Verfahren zum Messen der Lebensdauer von Minoritätsladungsträgern in Halbleitern
US09/958,172 US6653850B2 (en) 2000-02-17 2001-02-15 Surface passivation method and arrangement for measuring the lifetime of minority carriers in semiconductors
GB0122713A GB2370155A (en) 2000-02-17 2001-02-15 Surface passivation method and arrangement for measuring the lifetime of minority carriers in semiconductors
JP2001560440A JP2003523628A (ja) 2000-02-17 2001-02-15 半導体の少数キャリアの寿命を測定する表面パッシベーション方法および装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
HU0000710A HU227170B1 (en) 2000-02-17 2000-02-17 Surface passivation method and arrangement for measuring life time of minority carrier of semiconductors

Publications (4)

Publication Number Publication Date
HU0000710D0 true HU0000710D0 (en) 2000-04-28
HUP0000710A2 HUP0000710A2 (hu) 2001-11-28
HUP0000710A3 HUP0000710A3 (en) 2002-01-28
HU227170B1 HU227170B1 (en) 2010-09-28

Family

ID=89978108

Family Applications (1)

Application Number Title Priority Date Filing Date
HU0000710A HU227170B1 (en) 2000-02-17 2000-02-17 Surface passivation method and arrangement for measuring life time of minority carrier of semiconductors

Country Status (6)

Country Link
US (1) US6653850B2 (hu)
JP (1) JP2003523628A (hu)
DE (1) DE10190639B3 (hu)
GB (1) GB2370155A (hu)
HU (1) HU227170B1 (hu)
WO (1) WO2001061745A2 (hu)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030052462A (ko) * 2001-12-21 2003-06-27 주식회사 실트론 실리콘 웨이퍼의 라이프 타임 측정방법
JP4785039B2 (ja) * 2005-08-10 2011-10-05 コバレントマテリアル株式会社 シリコンウェーハのライフタイム測定方法
EP2037288B1 (en) * 2007-09-11 2011-06-22 S.O.I. TEC Silicon on Insulator Technologies Volume lifetime measurement
JP5373364B2 (ja) * 2008-10-27 2013-12-18 グローバルウェーハズ・ジャパン株式会社 シリコンウェーハのキャリアライフタイム測定方法
JP5814558B2 (ja) * 2010-06-30 2015-11-17 株式会社神戸製鋼所 酸化物半導体薄膜の評価方法、及び酸化物半導体薄膜の品質管理方法
JP5350345B2 (ja) * 2010-09-22 2013-11-27 株式会社神戸製鋼所 薄膜半導体の結晶性評価装置および方法
KR102068741B1 (ko) 2013-06-04 2020-01-22 삼성디스플레이 주식회사 다결정 규소막의 검사 방법
WO2015033499A1 (ja) * 2013-09-03 2015-03-12 パナソニック株式会社 薄膜トランジスタの評価方法、製造方法、及び、薄膜トランジスタ
JP5798669B2 (ja) * 2013-12-03 2015-10-21 株式会社神戸製鋼所 酸化物半導体薄膜の評価方法、及び酸化物半導体薄膜の品質管理方法、並びに上記評価方法に用いられる評価装置
US10564215B2 (en) * 2014-07-01 2020-02-18 Raja Technologies Inc. System and method of semiconductor characterization
JP6421711B2 (ja) * 2015-07-03 2018-11-14 信越半導体株式会社 再結合ライフタイム測定の前処理方法
CN108983063A (zh) * 2018-05-29 2018-12-11 中国计量大学 晶硅太阳能电池少子寿命的测试方法
CN112366146A (zh) * 2020-11-05 2021-02-12 天津中环领先材料技术有限公司 一种晶圆片的寿命测试方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3407850A1 (de) * 1984-02-29 1985-09-05 Hahn-Meitner-Institut für Kernforschung Berlin GmbH, 1000 Berlin Mikrowellen-messverfahren und -messapparatur zur kontaktlosen und zerstoerungsfreien untersuchung photoempfindlicher materialien
JP2702807B2 (ja) * 1990-08-09 1998-01-26 東芝セラミックス株式会社 半導体中の深い不純物準位の測定方法及びその装置
US5406214A (en) 1990-12-17 1995-04-11 Semilab Felvezeto Fizikai Lab, Rt Method and apparatus for measuring minority carrier lifetime in semiconductor materials
HUT63497A (en) * 1990-12-17 1993-08-30 Semilab Felvezetoe Fiz Lab Rt Method and apparatus for measuring minority charge carrier in semiconductor material
US5580828A (en) * 1992-12-16 1996-12-03 Semiconductor Physics Laboratory Rt Method for chemical surface passivation for in-situ bulk lifetime measurement of silicon semiconductor material
US5581499A (en) * 1995-06-06 1996-12-03 Hamamdjian; Gilbert Micro information storage system
JP3670051B2 (ja) 1995-06-06 2005-07-13 株式会社神戸製鋼所 半導体試料のキャリアのライフタイム測定方法及びその装置
US6011404A (en) 1997-07-03 2000-01-04 Lucent Technologies Inc. System and method for determining near--surface lifetimes and the tunneling field of a dielectric in a semiconductor
US5834941A (en) * 1997-08-11 1998-11-10 Keithley Instruments, Inc. Mobile charge measurement using corona charge and ultraviolet light
US6207468B1 (en) * 1998-10-23 2001-03-27 Lucent Technologies Inc. Non-contact method for monitoring and controlling plasma charging damage in a semiconductor device

Also Published As

Publication number Publication date
HUP0000710A2 (hu) 2001-11-28
HU227170B1 (en) 2010-09-28
DE10190639B3 (de) 2013-08-01
US20020158642A1 (en) 2002-10-31
GB0122713D0 (en) 2001-11-14
DE10190639T1 (de) 2002-08-01
WO2001061745A2 (en) 2001-08-23
HUP0000710A3 (en) 2002-01-28
GB2370155A (en) 2002-06-19
US6653850B2 (en) 2003-11-25
JP2003523628A (ja) 2003-08-05
WO2001061745A3 (en) 2002-01-31

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