HK95993A - Production of semiconductor devices - Google Patents

Production of semiconductor devices

Info

Publication number
HK95993A
HK95993A HK959/93A HK95993A HK95993A HK 95993 A HK95993 A HK 95993A HK 959/93 A HK959/93 A HK 959/93A HK 95993 A HK95993 A HK 95993A HK 95993 A HK95993 A HK 95993A
Authority
HK
Hong Kong
Prior art keywords
production
semiconductor devices
semiconductor
devices
Prior art date
Application number
HK959/93A
Other languages
English (en)
Inventor
Jeffrey Thomas Koze
Original Assignee
American Telephone & Telegraph
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone & Telegraph filed Critical American Telephone & Telegraph
Publication of HK95993A publication Critical patent/HK95993A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
    • H01L21/3145—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers formed by deposition from a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/007—Autodoping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/015—Capping layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/06—Gettering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/916—Autodoping control or utilization

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
HK959/93A 1986-05-02 1993-09-16 Production of semiconductor devices HK95993A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/858,688 US4687682A (en) 1986-05-02 1986-05-02 Back sealing of silicon wafers
PCT/US1987/001000 WO1987006762A1 (en) 1986-05-02 1987-04-28 Production of semiconductor devices

Publications (1)

Publication Number Publication Date
HK95993A true HK95993A (en) 1993-09-24

Family

ID=25328919

Family Applications (1)

Application Number Title Priority Date Filing Date
HK959/93A HK95993A (en) 1986-05-02 1993-09-16 Production of semiconductor devices

Country Status (10)

Country Link
US (1) US4687682A (xx)
EP (1) EP0265504B1 (xx)
JP (1) JP2653804B2 (xx)
KR (1) KR920003291B1 (xx)
CA (1) CA1253263A (xx)
DE (1) DE3777532D1 (xx)
ES (1) ES2004414A6 (xx)
HK (1) HK95993A (xx)
SG (1) SG124092G (xx)
WO (1) WO1987006762A1 (xx)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5871811A (en) * 1986-12-19 1999-02-16 Applied Materials, Inc. Method for protecting against deposition on a selected region of a substrate
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
US5225235A (en) * 1987-05-18 1993-07-06 Osaka Titanium Co., Ltd. Semiconductor wafer and manufacturing method therefor
US4925809A (en) * 1987-05-23 1990-05-15 Osaka Titanium Co., Ltd. Semiconductor wafer and epitaxial growth on the semiconductor wafer with autodoping control and manufacturing method therefor
EP0375232B1 (en) * 1988-12-21 1996-03-06 AT&T Corp. Growth-modified thermal oxidation process for thin oxides
US4962049A (en) * 1989-04-13 1990-10-09 Applied Materials, Inc. Process for the plasma treatment of the backside of a semiconductor wafer
EP0418468B1 (en) * 1989-09-20 1995-01-25 International Business Machines Corporation Method for producing an ultra-thin dielectric for microelectronics applications
US5133284A (en) * 1990-07-16 1992-07-28 National Semiconductor Corp. Gas-based backside protection during substrate processing
US5238499A (en) * 1990-07-16 1993-08-24 Novellus Systems, Inc. Gas-based substrate protection during processing
US5578532A (en) * 1990-07-16 1996-11-26 Novellus Systems, Inc. Wafer surface protection in a gas deposition process
US5230741A (en) * 1990-07-16 1993-07-27 Novellus Systems, Inc. Gas-based backside protection during substrate processing
US5620525A (en) * 1990-07-16 1997-04-15 Novellus Systems, Inc. Apparatus for supporting a substrate and introducing gas flow doximate to an edge of the substrate
US5843233A (en) * 1990-07-16 1998-12-01 Novellus Systems, Inc. Exclusion guard and gas-based substrate protection for chemical vapor deposition apparatus
EP0529888A1 (en) * 1991-08-22 1993-03-03 AT&T Corp. Removal of substrate perimeter material
US5296385A (en) * 1991-12-31 1994-03-22 Texas Instruments Incorporated Conditioning of semiconductor wafers for uniform and repeatable rapid thermal processing
US5656510A (en) * 1994-11-22 1997-08-12 Lucent Technologies Inc. Method for manufacturing gate oxide capacitors including wafer backside dielectric and implantation electron flood gun current control
US6184154B1 (en) * 1999-10-13 2001-02-06 Seh America, Inc. Method of processing the backside of a wafer within an epitaxial reactor chamber
DE10056261A1 (de) * 2000-11-14 2002-05-29 Infineon Technologies Ag Verfahren zur Herstellung eines integrierten Halbleiter-Bauelements
US6670283B2 (en) 2001-11-20 2003-12-30 International Business Machines Corporation Backside protection films
EP1482539A1 (en) * 2003-05-26 2004-12-01 S.O.I. Tec Silicon on Insulator Technologies S.A. Preparation method for protecting the back side of a wafer and back side protected wafer
US7205216B2 (en) * 2004-07-29 2007-04-17 International Business Machines Corporation Modification of electrical properties for semiconductor wafers
US20060138601A1 (en) * 2004-12-27 2006-06-29 Memc Electronic Materials, Inc. Internally gettered heteroepitaxial semiconductor wafers and methods of manufacturing such wafers
JP2012119453A (ja) * 2010-11-30 2012-06-21 Mitsubishi Electric Corp 不純物拡散装置
CN103021842B (zh) * 2012-12-03 2014-12-31 天津中环领先材料技术有限公司 一种在单晶硅晶圆上实现高速率沉积SiO2薄膜的背封工艺
CN116397216A (zh) * 2023-03-31 2023-07-07 西安奕斯伟材料科技股份有限公司 一种用于背封硅片的装置

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Publication number Priority date Publication date Assignee Title
US3556841A (en) * 1967-04-11 1971-01-19 Matsushita Electronics Corp Process for forming silicon dioxide films
US3663319A (en) * 1968-11-20 1972-05-16 Gen Motors Corp Masking to prevent autodoping of epitaxial deposits
US3660180A (en) * 1969-02-27 1972-05-02 Ibm Constrainment of autodoping in epitaxial deposition
JPS4929099B1 (xx) * 1970-03-27 1974-08-01
US3716422A (en) * 1970-03-30 1973-02-13 Ibm Method of growing an epitaxial layer by controlling autodoping
US3669769A (en) * 1970-09-29 1972-06-13 Ibm Method for minimizing autodoping in epitaxial deposition
US3765960A (en) * 1970-11-02 1973-10-16 Ibm Method for minimizing autodoping in epitaxial deposition
US3934060A (en) * 1973-12-19 1976-01-20 Motorola, Inc. Method for forming a deposited silicon dioxide layer on a semiconductor wafer
US4053335A (en) * 1976-04-02 1977-10-11 International Business Machines Corporation Method of gettering using backside polycrystalline silicon
FR2454697A1 (fr) * 1979-04-20 1980-11-14 Thomson Csf Procede de formation d'une couche epitaxiee homopolaire sur un substrat semiconducteur
JPS5621317A (en) * 1979-07-30 1981-02-27 Fujitsu Ltd Manufacture of semiconductor device
JPS5664442A (en) * 1979-10-30 1981-06-01 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS5793530A (en) * 1980-12-03 1982-06-10 Nec Corp Semiconductor device
US4438157A (en) * 1980-12-05 1984-03-20 Ncr Corporation Process for forming MNOS dual dielectric structure
JPS58134430A (ja) * 1982-02-04 1983-08-10 Nippon Denso Co Ltd 半導体装置の製造方法
JPS60211846A (ja) * 1984-04-05 1985-10-24 Fuji Electric Corp Res & Dev Ltd 多層絶縁膜の形成方法

Also Published As

Publication number Publication date
ES2004414A6 (es) 1989-01-01
KR920003291B1 (ko) 1992-04-27
EP0265504B1 (en) 1992-03-18
JPS63503184A (ja) 1988-11-17
US4687682A (en) 1987-08-18
KR880701457A (ko) 1988-07-27
WO1987006762A1 (en) 1987-11-05
DE3777532D1 (de) 1992-04-23
EP0265504A1 (en) 1988-05-04
SG124092G (en) 1993-02-19
CA1253263A (en) 1989-04-25
JP2653804B2 (ja) 1997-09-17

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Legal Events

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PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)