HK78196A - Crystal growth method and apparatus - Google Patents

Crystal growth method and apparatus Download PDF

Info

Publication number
HK78196A
HK78196A HK78196A HK78196A HK78196A HK 78196 A HK78196 A HK 78196A HK 78196 A HK78196 A HK 78196A HK 78196 A HK78196 A HK 78196A HK 78196 A HK78196 A HK 78196A
Authority
HK
Hong Kong
Prior art keywords
seed crystal
crucible
ingot
central axis
crystal
Prior art date
Application number
HK78196A
Other languages
German (de)
English (en)
French (fr)
Inventor
Afzal Shahid Muhammed
Original Assignee
At&T Corp.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by At&T Corp. filed Critical At&T Corp.
Publication of HK78196A publication Critical patent/HK78196A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
HK78196A 1991-01-28 1996-05-02 Crystal growth method and apparatus HK78196A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/646,125 US5123996A (en) 1991-01-28 1991-01-28 Crystal growth method and apparatus

Publications (1)

Publication Number Publication Date
HK78196A true HK78196A (en) 1996-05-10

Family

ID=24591858

Family Applications (1)

Application Number Title Priority Date Filing Date
HK78196A HK78196A (en) 1991-01-28 1996-05-02 Crystal growth method and apparatus

Country Status (7)

Country Link
US (1) US5123996A (cs)
EP (1) EP0497482B1 (cs)
JP (1) JPH04362084A (cs)
KR (1) KR100190771B1 (cs)
DE (1) DE69203737T2 (cs)
HK (1) HK78196A (cs)
TW (1) TW288155B (cs)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999050481A1 (fr) * 1998-03-31 1999-10-07 Japan Energy Corporation Procede de fabrication d'un monocristal de compose semiconducteur
KR101405320B1 (ko) * 2009-10-22 2014-06-10 어드밴스드 리뉴어블에너지 컴파니 엘엘씨 결정 성장 방법 및 시스템
KR101198163B1 (ko) 2011-01-26 2012-11-12 디케이아즈텍 주식회사 타원형 도가니를 이용한 카이로플러스법에 의한 사파이어 단결정 제조 장치
JP2012212851A (ja) 2011-03-18 2012-11-01 Ricoh Co Ltd プリント基板、画像形成装置及びプリント基板の再利用回数の認識方法
JP7155968B2 (ja) * 2018-12-04 2022-10-19 Tdk株式会社 単結晶育成用ルツボ及び単結晶製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2116916A5 (fr) * 1970-12-11 1972-07-21 Radiotechnique Compelec Procede de fabrication de monocristaux de composes semiconducteurs
FR2175594B1 (cs) * 1972-03-15 1974-09-13 Radiotechnique Compelec
US3944393A (en) * 1973-11-21 1976-03-16 Monsanto Company Apparatus for horizontal production of single crystal structure
US4404172A (en) * 1981-01-05 1983-09-13 Western Electric Company, Inc. Method and apparatus for forming and growing a single crystal of a semiconductor compound
US4343662A (en) * 1981-03-31 1982-08-10 Atlantic Richfield Company Manufacturing semiconductor wafer devices by simultaneous slicing and etching
US4714101A (en) * 1981-04-02 1987-12-22 United Technologies Corporation Method and apparatus for epitaxial solidification
JPS6221786A (ja) * 1985-07-18 1987-01-30 Hitachi Cable Ltd 横型ボ−ト法による３−ｖ族化合物半導体単結晶製造装置のボ−ト及びこれに収容される種結晶
JPS63182288A (ja) * 1987-01-22 1988-07-27 Mitsubishi Metal Corp ３−５族化合物単結晶の製造方法
JP2723249B2 (ja) * 1988-04-28 1998-03-09 日本電信電話株式会社 結晶育成方法および結晶育成用るつぼ
US4946542A (en) * 1988-12-05 1990-08-07 At&T Bell Laboratories Crystal growth method in crucible with step portion
US4966645A (en) * 1989-12-04 1990-10-30 At&T Bell Laboratories Crystal growth method and apparatus

Also Published As

Publication number Publication date
TW288155B (cs) 1996-10-11
EP0497482B1 (en) 1995-08-02
EP0497482A1 (en) 1992-08-05
US5123996A (en) 1992-06-23
KR920014956A (ko) 1992-08-26
JPH04362084A (ja) 1992-12-15
KR100190771B1 (ko) 1999-06-01
DE69203737T2 (de) 1996-04-04
DE69203737D1 (de) 1995-09-07

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PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)