HK40990A - A semiconductor memory device - Google Patents

A semiconductor memory device

Info

Publication number
HK40990A
HK40990A HK409/90A HK40990A HK40990A HK 40990 A HK40990 A HK 40990A HK 409/90 A HK409/90 A HK 409/90A HK 40990 A HK40990 A HK 40990A HK 40990 A HK40990 A HK 40990A
Authority
HK
Hong Kong
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Application number
HK409/90A
Inventor
Mitsumasa Koyanagi
Shinji Shimizu
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP58210825A external-priority patent/JPS60103665A/en
Priority claimed from JP58216143A external-priority patent/JPH077823B2/en
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of HK40990A publication Critical patent/HK40990A/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/30DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
HK409/90A 1983-11-11 1990-05-24 A semiconductor memory device HK40990A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP58210825A JPS60103665A (en) 1983-11-11 1983-11-11 Semiconductor ic device
JP58216143A JPH077823B2 (en) 1983-11-18 1983-11-18 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
HK40990A true HK40990A (en) 1990-06-01

Family

ID=26518291

Family Applications (1)

Application Number Title Priority Date Filing Date
HK409/90A HK40990A (en) 1983-11-11 1990-05-24 A semiconductor memory device

Country Status (6)

Country Link
KR (1) KR850003612A (en)
DE (1) DE3441062A1 (en)
FR (1) FR2554954B1 (en)
GB (1) GB2150750B (en)
HK (1) HK40990A (en)
IT (1) IT1209595B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910007181B1 (en) * 1988-09-22 1991-09-19 현대전자산업 주식회사 Side-wall doped trench and stacked capacitor cell and method manufacturing thereof

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2553591C2 (en) * 1975-11-28 1977-11-17 Siemens AG, 1000 Berlin und 8000 München Memory matrix with one or more single-transistor memory elements
DE2728927C2 (en) * 1977-06-27 1984-06-28 Siemens AG, 1000 Berlin und 8000 München One-transistor storage element
DE2728928A1 (en) * 1977-06-27 1979-01-18 Siemens Ag Integrated single transistor storage element - has storage capacitor consisting of two conducting layers separated by insulating layer
JPS561559A (en) * 1979-06-19 1981-01-09 Fujitsu Ltd One-transistor type dynamic memory cell
JPS5623771A (en) * 1979-08-01 1981-03-06 Hitachi Ltd Semiconductor memory
JPS5643753A (en) * 1979-09-18 1981-04-22 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory storage
JPS583260A (en) * 1981-06-29 1983-01-10 Fujitsu Ltd Vertical type buried capacitor
JPS58137245A (en) * 1982-02-10 1983-08-15 Hitachi Ltd Semiconductor memory and its manufacture
JPS5982761A (en) * 1982-11-04 1984-05-12 Hitachi Ltd Semiconductor memory
JPH0666436B2 (en) * 1983-04-15 1994-08-24 株式会社日立製作所 Semiconductor integrated circuit device

Also Published As

Publication number Publication date
GB8424555D0 (en) 1984-11-07
GB2150750B (en) 1987-08-26
IT1209595B (en) 1989-08-30
FR2554954A1 (en) 1985-05-17
KR850003612A (en) 1985-06-20
IT8423518A0 (en) 1984-11-09
FR2554954B1 (en) 1989-05-12
GB2150750A (en) 1985-07-03
DE3441062A1 (en) 1985-05-23

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)