FR2554954B1 - SEMICONDUCTOR MEMORY DEVICE - Google Patents

SEMICONDUCTOR MEMORY DEVICE

Info

Publication number
FR2554954B1
FR2554954B1 FR848413162A FR8413162A FR2554954B1 FR 2554954 B1 FR2554954 B1 FR 2554954B1 FR 848413162 A FR848413162 A FR 848413162A FR 8413162 A FR8413162 A FR 8413162A FR 2554954 B1 FR2554954 B1 FR 2554954B1
Authority
FR
France
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR848413162A
Other languages
French (fr)
Other versions
FR2554954A1 (en
Inventor
Mitsumasa Koyanagi
Shinji Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP58210825A external-priority patent/JPS60103665A/en
Priority claimed from JP58216143A external-priority patent/JPH077823B2/en
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2554954A1 publication Critical patent/FR2554954A1/en
Application granted granted Critical
Publication of FR2554954B1 publication Critical patent/FR2554954B1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
FR848413162A 1983-11-11 1984-08-24 SEMICONDUCTOR MEMORY DEVICE Expired FR2554954B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP58210825A JPS60103665A (en) 1983-11-11 1983-11-11 Semiconductor ic device
JP58216143A JPH077823B2 (en) 1983-11-18 1983-11-18 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
FR2554954A1 FR2554954A1 (en) 1985-05-17
FR2554954B1 true FR2554954B1 (en) 1989-05-12

Family

ID=26518291

Family Applications (1)

Application Number Title Priority Date Filing Date
FR848413162A Expired FR2554954B1 (en) 1983-11-11 1984-08-24 SEMICONDUCTOR MEMORY DEVICE

Country Status (6)

Country Link
KR (1) KR850003612A (en)
DE (1) DE3441062A1 (en)
FR (1) FR2554954B1 (en)
GB (1) GB2150750B (en)
HK (1) HK40990A (en)
IT (1) IT1209595B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR910007181B1 (en) * 1988-09-22 1991-09-19 현대전자산업 주식회사 Side-wall doped trench and stacked capacitor cell and method manufacturing thereof

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2553591C2 (en) * 1975-11-28 1977-11-17 Siemens AG, 1000 Berlin und 8000 München Memory matrix with one or more single-transistor memory elements
DE2728927C2 (en) * 1977-06-27 1984-06-28 Siemens AG, 1000 Berlin und 8000 München One-transistor storage element
DE2728928A1 (en) * 1977-06-27 1979-01-18 Siemens Ag Integrated single transistor storage element - has storage capacitor consisting of two conducting layers separated by insulating layer
JPS561559A (en) * 1979-06-19 1981-01-09 Fujitsu Ltd One-transistor type dynamic memory cell
JPS5623771A (en) * 1979-08-01 1981-03-06 Hitachi Ltd Semiconductor memory
JPS5643753A (en) * 1979-09-18 1981-04-22 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory storage
JPS583260A (en) * 1981-06-29 1983-01-10 Fujitsu Ltd Vertical type buried capacitor
JPS58137245A (en) * 1982-02-10 1983-08-15 Hitachi Ltd Semiconductor memory and its manufacture
JPS5982761A (en) * 1982-11-04 1984-05-12 Hitachi Ltd Semiconductor memory
JPH0666436B2 (en) * 1983-04-15 1994-08-24 株式会社日立製作所 Semiconductor integrated circuit device

Also Published As

Publication number Publication date
GB8424555D0 (en) 1984-11-07
HK40990A (en) 1990-06-01
GB2150750B (en) 1987-08-26
GB2150750A (en) 1985-07-03
DE3441062A1 (en) 1985-05-23
IT1209595B (en) 1989-08-30
KR850003612A (en) 1985-06-20
FR2554954A1 (en) 1985-05-17
IT8423518A0 (en) 1984-11-09

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Legal Events

Date Code Title Description
ST Notification of lapse