JPS5643753A - Semiconductor memory storage - Google Patents
Semiconductor memory storageInfo
- Publication number
- JPS5643753A JPS5643753A JP11984779A JP11984779A JPS5643753A JP S5643753 A JPS5643753 A JP S5643753A JP 11984779 A JP11984779 A JP 11984779A JP 11984779 A JP11984779 A JP 11984779A JP S5643753 A JPS5643753 A JP S5643753A
- Authority
- JP
- Japan
- Prior art keywords
- region
- regions
- capacitor
- layers
- conduction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 230000005055 memory storage Effects 0.000 title 1
- 239000003990 capacitor Substances 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To prevent the generation of a parasitic MIS effect and obviate the breakdown of information base on the irradiation alpha rays, etc. by a method wherein high concentration regions are formed contacting with a region making up an MIS transistor. CONSTITUTION:The second conduction type (such as N) the first region 23, and the second region 24 consisting of regions 24, 25 are formed to the first conduction type (such as P) semiconductor substrate 21, and P<+> or N<+> third regions 27 with high concentration are made up. P type conductive layers 30 are built up on a main surface 22, the first region 23 and a region 28 of the second region 26 through the first insulating layer 29, and an MISFET(Q) is formed. N type conduction layers 32 connected to the second regions 25 are made up on the third regions 27 through the second insulating layers 31, and capacitor elements C1 are made up. Capacitors C2 may be connected in parallel on the capacitor C1 by insulating layers 33 and the fourth conduction layer 34. Thus, fixed voltage is applied between a conduction layer 36 and the substrate 21, the capacitor C1 and the capacitor C2 are charged by the control signals of the electrodes 30 and informations can be memorized, and the expansion of the depletion layers of the insulating layers 31-35 can be neglected substantially by the existence of the semiconductor region 27.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11984779A JPS5643753A (en) | 1979-09-18 | 1979-09-18 | Semiconductor memory storage |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11984779A JPS5643753A (en) | 1979-09-18 | 1979-09-18 | Semiconductor memory storage |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5643753A true JPS5643753A (en) | 1981-04-22 |
Family
ID=14771731
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11984779A Pending JPS5643753A (en) | 1979-09-18 | 1979-09-18 | Semiconductor memory storage |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5643753A (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6046067A (en) * | 1983-08-24 | 1985-03-12 | Hitachi Ltd | Semiconductor integrated circuit device |
FR2554954A1 (en) * | 1983-11-11 | 1985-05-17 | Hitachi Ltd | SEMICONDUCTOR MEMORY DEVICE |
EP0145606A2 (en) * | 1983-12-13 | 1985-06-19 | Fujitsu Limited | Semiconductor memory device |
US4635085A (en) * | 1982-06-30 | 1987-01-06 | Fujitsu Limited | Semiconductor memory device |
JPS6290966A (en) * | 1985-10-16 | 1987-04-25 | Mitsubishi Electric Corp | Semiconductor memory |
US5021842A (en) * | 1983-04-15 | 1991-06-04 | Hitachi, Ltd. | Trench DRAM cell with different insulator thicknesses |
US5196910A (en) * | 1987-04-24 | 1993-03-23 | Hitachi, Ltd. | Semiconductor memory device with recessed array region |
USRE38296E1 (en) * | 1987-04-24 | 2003-11-04 | Hitachi, Ltd. | Semiconductor memory device with recessed array region |
JP2007073709A (en) * | 2005-09-06 | 2007-03-22 | Nec Electronics Corp | Semiconductor device |
-
1979
- 1979-09-18 JP JP11984779A patent/JPS5643753A/en active Pending
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4635085A (en) * | 1982-06-30 | 1987-01-06 | Fujitsu Limited | Semiconductor memory device |
US5021842A (en) * | 1983-04-15 | 1991-06-04 | Hitachi, Ltd. | Trench DRAM cell with different insulator thicknesses |
JPS6046067A (en) * | 1983-08-24 | 1985-03-12 | Hitachi Ltd | Semiconductor integrated circuit device |
JPH0578186B2 (en) * | 1983-08-24 | 1993-10-28 | Hitachi Ltd | |
FR2554954A1 (en) * | 1983-11-11 | 1985-05-17 | Hitachi Ltd | SEMICONDUCTOR MEMORY DEVICE |
EP0145606A2 (en) * | 1983-12-13 | 1985-06-19 | Fujitsu Limited | Semiconductor memory device |
US4646118A (en) * | 1983-12-13 | 1987-02-24 | Fujitsu Limited | Semiconductor memory device |
JPS6290966A (en) * | 1985-10-16 | 1987-04-25 | Mitsubishi Electric Corp | Semiconductor memory |
US5196910A (en) * | 1987-04-24 | 1993-03-23 | Hitachi, Ltd. | Semiconductor memory device with recessed array region |
USRE38296E1 (en) * | 1987-04-24 | 2003-11-04 | Hitachi, Ltd. | Semiconductor memory device with recessed array region |
JP2007073709A (en) * | 2005-09-06 | 2007-03-22 | Nec Electronics Corp | Semiconductor device |
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