JPS5643753A - Semiconductor memory storage - Google Patents

Semiconductor memory storage

Info

Publication number
JPS5643753A
JPS5643753A JP11984779A JP11984779A JPS5643753A JP S5643753 A JPS5643753 A JP S5643753A JP 11984779 A JP11984779 A JP 11984779A JP 11984779 A JP11984779 A JP 11984779A JP S5643753 A JPS5643753 A JP S5643753A
Authority
JP
Japan
Prior art keywords
region
regions
capacitor
layers
conduction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11984779A
Other languages
Japanese (ja)
Inventor
Susumu Muramoto
Takashi Asaoka
Nobuaki Ieda
Tsuneo Mano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP11984779A priority Critical patent/JPS5643753A/en
Publication of JPS5643753A publication Critical patent/JPS5643753A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/30DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To prevent the generation of a parasitic MIS effect and obviate the breakdown of information base on the irradiation alpha rays, etc. by a method wherein high concentration regions are formed contacting with a region making up an MIS transistor. CONSTITUTION:The second conduction type (such as N) the first region 23, and the second region 24 consisting of regions 24, 25 are formed to the first conduction type (such as P) semiconductor substrate 21, and P<+> or N<+> third regions 27 with high concentration are made up. P type conductive layers 30 are built up on a main surface 22, the first region 23 and a region 28 of the second region 26 through the first insulating layer 29, and an MISFET(Q) is formed. N type conduction layers 32 connected to the second regions 25 are made up on the third regions 27 through the second insulating layers 31, and capacitor elements C1 are made up. Capacitors C2 may be connected in parallel on the capacitor C1 by insulating layers 33 and the fourth conduction layer 34. Thus, fixed voltage is applied between a conduction layer 36 and the substrate 21, the capacitor C1 and the capacitor C2 are charged by the control signals of the electrodes 30 and informations can be memorized, and the expansion of the depletion layers of the insulating layers 31-35 can be neglected substantially by the existence of the semiconductor region 27.
JP11984779A 1979-09-18 1979-09-18 Semiconductor memory storage Pending JPS5643753A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11984779A JPS5643753A (en) 1979-09-18 1979-09-18 Semiconductor memory storage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11984779A JPS5643753A (en) 1979-09-18 1979-09-18 Semiconductor memory storage

Publications (1)

Publication Number Publication Date
JPS5643753A true JPS5643753A (en) 1981-04-22

Family

ID=14771731

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11984779A Pending JPS5643753A (en) 1979-09-18 1979-09-18 Semiconductor memory storage

Country Status (1)

Country Link
JP (1) JPS5643753A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6046067A (en) * 1983-08-24 1985-03-12 Hitachi Ltd Semiconductor integrated circuit device
FR2554954A1 (en) * 1983-11-11 1985-05-17 Hitachi Ltd SEMICONDUCTOR MEMORY DEVICE
EP0145606A2 (en) * 1983-12-13 1985-06-19 Fujitsu Limited Semiconductor memory device
US4635085A (en) * 1982-06-30 1987-01-06 Fujitsu Limited Semiconductor memory device
JPS6290966A (en) * 1985-10-16 1987-04-25 Mitsubishi Electric Corp Semiconductor memory
US5021842A (en) * 1983-04-15 1991-06-04 Hitachi, Ltd. Trench DRAM cell with different insulator thicknesses
US5196910A (en) * 1987-04-24 1993-03-23 Hitachi, Ltd. Semiconductor memory device with recessed array region
USRE38296E1 (en) * 1987-04-24 2003-11-04 Hitachi, Ltd. Semiconductor memory device with recessed array region
JP2007073709A (en) * 2005-09-06 2007-03-22 Nec Electronics Corp Semiconductor device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4635085A (en) * 1982-06-30 1987-01-06 Fujitsu Limited Semiconductor memory device
US5021842A (en) * 1983-04-15 1991-06-04 Hitachi, Ltd. Trench DRAM cell with different insulator thicknesses
JPS6046067A (en) * 1983-08-24 1985-03-12 Hitachi Ltd Semiconductor integrated circuit device
JPH0578186B2 (en) * 1983-08-24 1993-10-28 Hitachi Ltd
FR2554954A1 (en) * 1983-11-11 1985-05-17 Hitachi Ltd SEMICONDUCTOR MEMORY DEVICE
EP0145606A2 (en) * 1983-12-13 1985-06-19 Fujitsu Limited Semiconductor memory device
US4646118A (en) * 1983-12-13 1987-02-24 Fujitsu Limited Semiconductor memory device
JPS6290966A (en) * 1985-10-16 1987-04-25 Mitsubishi Electric Corp Semiconductor memory
US5196910A (en) * 1987-04-24 1993-03-23 Hitachi, Ltd. Semiconductor memory device with recessed array region
USRE38296E1 (en) * 1987-04-24 2003-11-04 Hitachi, Ltd. Semiconductor memory device with recessed array region
JP2007073709A (en) * 2005-09-06 2007-03-22 Nec Electronics Corp Semiconductor device

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