HK1247440A1 - 摻雜矽晶片的方法 - Google Patents

摻雜矽晶片的方法

Info

Publication number
HK1247440A1
HK1247440A1 HK18106754.3A HK18106754A HK1247440A1 HK 1247440 A1 HK1247440 A1 HK 1247440A1 HK 18106754 A HK18106754 A HK 18106754A HK 1247440 A1 HK1247440 A1 HK 1247440A1
Authority
HK
Hong Kong
Prior art keywords
silicon wafers
doping silicon
doping
wafers
silicon
Prior art date
Application number
HK18106754.3A
Other languages
English (en)
Inventor
瓦倫丁‧丹‧米哈萊奇
Original Assignee
International Solar Energy Res Center Konstanz E V
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Solar Energy Res Center Konstanz E V filed Critical International Solar Energy Res Center Konstanz E V
Publication of HK1247440A1 publication Critical patent/HK1247440A1/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251Diffusion into or out of group IV semiconductors
    • H01L21/2252Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
HK18106754.3A 2015-06-09 2018-05-24 摻雜矽晶片的方法 HK1247440A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP15171263.5A EP3104397B1 (en) 2015-06-09 2015-06-09 Method for doping silicon wafers
PCT/EP2016/062676 WO2016198338A1 (en) 2015-06-09 2016-06-03 Method for doping silicon wafers

Publications (1)

Publication Number Publication Date
HK1247440A1 true HK1247440A1 (zh) 2018-09-21

Family

ID=53404367

Family Applications (1)

Application Number Title Priority Date Filing Date
HK18106754.3A HK1247440A1 (zh) 2015-06-09 2018-05-24 摻雜矽晶片的方法

Country Status (4)

Country Link
EP (1) EP3104397B1 (zh)
CN (1) CN107690693B (zh)
HK (1) HK1247440A1 (zh)
WO (1) WO2016198338A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108110088B (zh) * 2017-12-21 2020-11-10 苏州阿特斯阳光电力科技有限公司 太阳能电池的低压扩散工艺及利用其制备得到的太阳能电池
DE102020133390A1 (de) * 2020-12-14 2022-06-15 Hanwha Q Cells Gmbh Verfahren zur Herstellung eines Bor-Emitters auf einem Silizium-Wafer

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6548378B1 (en) 1998-12-17 2003-04-15 Vishay Semiconductor Itzehoe Gmbh Method of boron doping wafers using a vertical oven system
EP2077587A4 (en) * 2006-09-27 2016-10-26 Kyocera Corp SOLAR CELL COMPONENT AND METHOD FOR MANUFACTURING THE SAME
FR2944138B1 (fr) 2009-04-06 2012-12-07 Semco Engineering Sa Procede de dopage au bore de plaquettes de silicium
CN101707226B (zh) * 2009-07-29 2012-05-09 湖南红太阳新能源科技有限公司 晶体硅太阳能电池的扩散工艺
DE102012207764B4 (de) * 2012-05-09 2022-08-11 International Solar Energy Research Center Konstanz E.V. Verfahren zur Bor-Dotierung von Silizium-Wafern
DE102012018746A1 (de) * 2012-09-21 2014-03-27 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Dotierung von Halbleitersubstraten
CN102916086A (zh) * 2012-10-31 2013-02-06 湖南红太阳光电科技有限公司 一种低方阻晶体硅电池的扩散工艺
DE102012025429A1 (de) * 2012-12-21 2014-06-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Dotierung von Halbleitersubstraten sowie dotiertes Halbleitersubstrat
CN103646999A (zh) * 2013-12-18 2014-03-19 上饶光电高科技有限公司 一种改善太阳能电池片均匀性的磷扩散方法
CN103681976A (zh) * 2013-12-27 2014-03-26 百力达太阳能股份有限公司 一种高效低成本太阳电池扩散工艺

Also Published As

Publication number Publication date
CN107690693A (zh) 2018-02-13
CN107690693B (zh) 2022-01-07
WO2016198338A1 (en) 2016-12-15
EP3104397A1 (en) 2016-12-14
EP3104397B1 (en) 2017-10-11

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