HK1247440A1 - 摻雜矽晶片的方法 - Google Patents
摻雜矽晶片的方法Info
- Publication number
- HK1247440A1 HK1247440A1 HK18106754.3A HK18106754A HK1247440A1 HK 1247440 A1 HK1247440 A1 HK 1247440A1 HK 18106754 A HK18106754 A HK 18106754A HK 1247440 A1 HK1247440 A1 HK 1247440A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- silicon wafers
- doping silicon
- doping
- wafers
- silicon
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 235000012431 wafers Nutrition 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP15171263.5A EP3104397B1 (en) | 2015-06-09 | 2015-06-09 | Method for doping silicon wafers |
PCT/EP2016/062676 WO2016198338A1 (en) | 2015-06-09 | 2016-06-03 | Method for doping silicon wafers |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1247440A1 true HK1247440A1 (zh) | 2018-09-21 |
Family
ID=53404367
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK18106754.3A HK1247440A1 (zh) | 2015-06-09 | 2018-05-24 | 摻雜矽晶片的方法 |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP3104397B1 (zh) |
CN (1) | CN107690693B (zh) |
HK (1) | HK1247440A1 (zh) |
WO (1) | WO2016198338A1 (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108110088B (zh) * | 2017-12-21 | 2020-11-10 | 苏州阿特斯阳光电力科技有限公司 | 太阳能电池的低压扩散工艺及利用其制备得到的太阳能电池 |
DE102020133390A1 (de) * | 2020-12-14 | 2022-06-15 | Hanwha Q Cells Gmbh | Verfahren zur Herstellung eines Bor-Emitters auf einem Silizium-Wafer |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6548378B1 (en) | 1998-12-17 | 2003-04-15 | Vishay Semiconductor Itzehoe Gmbh | Method of boron doping wafers using a vertical oven system |
EP2077587A4 (en) * | 2006-09-27 | 2016-10-26 | Kyocera Corp | SOLAR CELL COMPONENT AND METHOD FOR MANUFACTURING THE SAME |
FR2944138B1 (fr) | 2009-04-06 | 2012-12-07 | Semco Engineering Sa | Procede de dopage au bore de plaquettes de silicium |
CN101707226B (zh) * | 2009-07-29 | 2012-05-09 | 湖南红太阳新能源科技有限公司 | 晶体硅太阳能电池的扩散工艺 |
DE102012207764B4 (de) * | 2012-05-09 | 2022-08-11 | International Solar Energy Research Center Konstanz E.V. | Verfahren zur Bor-Dotierung von Silizium-Wafern |
DE102012018746A1 (de) * | 2012-09-21 | 2014-03-27 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Dotierung von Halbleitersubstraten |
CN102916086A (zh) * | 2012-10-31 | 2013-02-06 | 湖南红太阳光电科技有限公司 | 一种低方阻晶体硅电池的扩散工艺 |
DE102012025429A1 (de) * | 2012-12-21 | 2014-06-26 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Dotierung von Halbleitersubstraten sowie dotiertes Halbleitersubstrat |
CN103646999A (zh) * | 2013-12-18 | 2014-03-19 | 上饶光电高科技有限公司 | 一种改善太阳能电池片均匀性的磷扩散方法 |
CN103681976A (zh) * | 2013-12-27 | 2014-03-26 | 百力达太阳能股份有限公司 | 一种高效低成本太阳电池扩散工艺 |
-
2015
- 2015-06-09 EP EP15171263.5A patent/EP3104397B1/en active Active
-
2016
- 2016-06-03 CN CN201680033418.XA patent/CN107690693B/zh active Active
- 2016-06-03 WO PCT/EP2016/062676 patent/WO2016198338A1/en active Application Filing
-
2018
- 2018-05-24 HK HK18106754.3A patent/HK1247440A1/zh unknown
Also Published As
Publication number | Publication date |
---|---|
CN107690693A (zh) | 2018-02-13 |
CN107690693B (zh) | 2022-01-07 |
WO2016198338A1 (en) | 2016-12-15 |
EP3104397A1 (en) | 2016-12-14 |
EP3104397B1 (en) | 2017-10-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG10201606385RA (en) | Wafer processing method | |
SG10201606388SA (en) | Wafer processing method | |
SG10201605424SA (en) | Wafer thinning method | |
SG10201605425VA (en) | Wafer thinning method | |
SG11201708800UA (en) | Method for transfer of semiconductor devices | |
SG10201603714RA (en) | Wafer producing method | |
SG10201605089XA (en) | POLYCRYSTALLINE SiC WAFER PRODUCING METHOD | |
SG10201600557XA (en) | Wafer producing method | |
SG10201600555UA (en) | Wafer producing method | |
SG10201510273SA (en) | Wafer producing method | |
SG10201600552YA (en) | Wafer producing method | |
SG10201510271QA (en) | Wafer producing method | |
SG10201601981YA (en) | Wafer producing method | |
EP3379588A4 (en) | Semiconductor device manufacturing method | |
SG10201508477VA (en) | Methods for singulating semiconductor wafer | |
SG10201603205TA (en) | Wafer processing method | |
SG10201601975SA (en) | Wafer producing method | |
SG10201406877WA (en) | Method for chemical mechanical polishing silicon wafers | |
TWI800057B (zh) | 半導體裝置的製造方法 | |
SG10201610632XA (en) | Wafer processing method | |
SG10201602704UA (en) | Wafer processing method | |
SG11201709671YA (en) | Semiconductor device manufacturing method | |
EP3279924A4 (en) | Semiconductor device manufacturing method | |
SG10201605337UA (en) | Manufacturing method of semiconductor device | |
SG11201704360UA (en) | Method for polishing silicon wafer |