CN103646999A - 一种改善太阳能电池片均匀性的磷扩散方法 - Google Patents
一种改善太阳能电池片均匀性的磷扩散方法 Download PDFInfo
- Publication number
- CN103646999A CN103646999A CN201310694365.4A CN201310694365A CN103646999A CN 103646999 A CN103646999 A CN 103646999A CN 201310694365 A CN201310694365 A CN 201310694365A CN 103646999 A CN103646999 A CN 103646999A
- Authority
- CN
- China
- Prior art keywords
- nitrogen
- pressure
- pass
- stove
- duration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009792 diffusion process Methods 0.000 title claims abstract description 40
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 13
- 229910052698 phosphorus Inorganic materials 0.000 title claims abstract description 13
- 239000011574 phosphorus Substances 0.000 title claims abstract description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 120
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 60
- 230000003647 oxidation Effects 0.000 claims description 10
- 238000007254 oxidation reaction Methods 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 235000008216 herbs Nutrition 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 210000002268 wool Anatomy 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 5
- 238000001514 detection method Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000007789 gas Substances 0.000 abstract description 5
- 230000000052 comparative effect Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 206010021703 Indifference Diseases 0.000 description 1
- BYMHZVKNCWHDQH-UHFFFAOYSA-N [P].P(=O)(Cl)(Cl)Cl Chemical compound [P].P(=O)(Cl)(Cl)Cl BYMHZVKNCWHDQH-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明公开了一种改善太阳能电池片均匀性的磷扩散方法,通过改变氮气流量和压力来改善扩散均匀性,有效地控制其炉管内部气氛场状态及掺杂气体流动速度,从而达到扩散工艺的稳定性及重复性,使得整管均匀性及单片均匀性都得到一定改善,从而电性能得到一定改善。
Description
技术领域
本发明涉及一种改善太阳能电池片均匀性的磷扩散方法,属于多晶硅太阳能电池领域。
背景技术
在太阳能电池领域中,太阳能电池片制备过程已形成标准,主要步骤为制绒(表面织构化和表面化学清理处理)——扩散(形成PN结)——边缘刻蚀——镀膜(减反射膜)——丝网印刷——烧结。而这些步骤中扩散形成PN结是核心步骤,它是在P型衬底的情况下,使用磷进行扩散,从而形成PN结,在N型衬底的情况下,使用硼扩散,从而形成PN结。
现多数都为P型衬底,使用磷扩散,重点步骤为:第一步使用氮气携带液态磷三氯氧磷(POCL3),和其他气体(氮,氧),一起进入炉管,在低温800度左右进行沉积扩散,从而形成几百纳米的扩散深度;第二步通过高温进行高温推进再分布,使表面残余的磷进一步向硅片里面扩散,从而形成稳定均匀N层。
扩散炉Tempress相对于其他扩散炉来说,稳定性较好,但因为扩散炉的掺杂气体都是从管尾流进,通过尾气抽风从管口流出(压力)从而导致炉管内气氛场存在差异;其次因为其控温温度都是使用加热丝围绕在炉壁,由几个加热丝分段同时控温,在工艺确定的情况下,各温区控制区域扩散后效果存在差异,从而导致太阳能电池片光电转换效率降低。
发明内容
本发明的目的是提供一种改善太阳能电池片均匀性的磷扩散方法,通过改变氮气流量和压力来改善扩散均匀性,有效地控制其炉管内部气氛场状态及掺杂气体流动速度,从而达到扩散工艺的稳定性及重复性,使得整管均匀性及单片均匀性都得到一定改善,从而电性能得到一定改善。
一种改善太阳能电池片均匀性的磷扩散方法,使用的硅片是电阻率为1-3ohm.cm的156mm╳156mm规格的P型多晶硅片,常规酸制绒后具体步骤如下:
1、准备阶段:荷兰TEMPRESS扩散炉内通入氮气5slm,压力5pa;
2、进舟阶段:炉内通入氮气5slm,压力5pa,持续时间8min;
3、出舟阶段:炉内通入氮气5slm,压力-30pa,持续时间8min;
4、检漏阶段:炉内通入氮气6.5slm,压力-200pa,持续时间2min;
5、加热阶段:炉内通入氮气13.5slm,压力10pa,持续时间15min;
6、预氧化阶段:炉内通入氮气6slm,压力12pa,持续时间2min;
7、扩散阶段:炉内通入氮气6slm,压力12pa,持续时间15min,温度780℃-820℃;
8、后氧化阶段:炉内通入氮气6slm,压力12pa,持续时间7min;
9、推进阶段:炉内通入氮气6slm,压力12pa,持续时间6min;
10、扩散阶段:炉内通入氮气6slm,压力12pa,持续时间2min,温度850℃-870℃;
11、推进阶段:炉内通入氮气6slm,压力12pa,持续时间6min;
12、冷却阶段:炉内通入氮气12slm,压力12pa,持续时间15min;
13、进舟阶段:炉内通入氮气10slm,压力-30pa,持续时间8min;
14、出舟阶段:炉内通入氮气10slm,压力5pa,持续时间8min。
本发明对扩散工艺步骤进行相关参数调整,使得产生ECV曲线和现有工艺无差异,得到能提高整管均匀性和片内均匀性的扩散工艺,同时获得良好的光电转换效率。
具体实施方式
实施例:
一种改善太阳能电池片均匀性的磷扩散方法,使用的硅片是电阻率为1-3ohm.cm的156mm╳156mm规格的P型多晶硅片,常规酸制绒后具体步骤如下:
1、准备阶段:荷兰TEMPRESS扩散炉内通入氮气5slm,压力5pa;
2、进舟阶段:炉内通入氮气5slm,压力5pa,持续时间8min;
3、出舟阶段:炉内通入氮气5slm,压力-30pa,持续时间8min;
4、检漏阶段:炉内通入氮气6.5slm,压力-200pa,持续时间2min;
5、加热阶段:炉内通入氮气13.5slm,压力10pa,持续时间15min;
6、预氧化阶段:炉内通入氮气6slm,压力12pa,持续时间2min;
7、扩散阶段:炉内通入氮气6slm,压力12pa,持续时间15min,温度780℃-820℃;
8、后氧化阶段:炉内通入氮气6slm,压力12pa,持续时间7min;
9、推进阶段:炉内通入氮气6slm,压力12pa,持续时间6min;
10、扩散阶段:炉内通入氮气6slm,压力12pa,持续时间2min,温度850℃-870℃;
11、推进阶段:炉内通入氮气6slm,压力12pa,持续时间6min;
12、冷却阶段:炉内通入氮气12slm,压力12pa,持续时间15min;
13、进舟阶段:炉内通入氮气10slm,压力-30pa,持续时间8min;
14、出舟阶段:炉内通入氮气10slm,压力5pa,持续时间8min。
对比例:
一种磷扩散方法,使用的硅片是电阻率为1-3ohm.cm的156mm╳156mm规格的P型多晶硅片,常规酸制绒后具体步骤如下:
1、准备阶段:荷兰TEMPRESS扩散炉内通入氮气5slm,压力5pa;
2、进舟阶段:炉内通入氮气5slm,压力5pa,持续时间8min;
3、出舟阶段:炉内通入氮气5slm,压力-30pa,持续时间8min;
4、检漏阶段:炉内通入氮气6.5slm,压力-200pa,持续时间2min;
5、加热阶段:炉内通入氮气13.5slm,压力10pa,持续时间15min;
6、预氧化阶段:炉内通入氮气12slm,压力10pa,持续时间2min;
7、扩散阶段:炉内通入氮气12slm,压力10pa,持续时间15min,温度780℃-820℃;
8、后氧化阶段:炉内通入氮气12slm,压力10pa,持续时间7min;
9、推进阶段:炉内通入氮气12slm,压力10pa,持续时间6min;
10、扩散阶段:炉内通入氮气12slm,压力10pa,持续时间2min,温度850℃-870℃;
11、推进阶段:炉内通入氮气12slm,压力10pa,持续时间6min;
12、冷却阶段:炉内通入氮气12slm,压力12pa,持续时间15min;
13、进舟阶段:炉内通入氮气10slm,压力-30pa,持续时间8min;
14、出舟阶段:炉内通入氮气10slm,压力5pa,持续时间8min。
把实施例和对比例扩散后从一管500片中固定位置多次抽取5片进行测试,去片内均匀性和整管均匀性如下表所示:
注:均匀性计算方式为(最大值-最小值)/(最大值+最小值)*100%
由以上数据可以看出改善后的实施例与原始工艺对比例的均匀性有较大改善。
实施例和对比例电性能参数对比:
Uoc(mV) | Isc(A) | Rs(mΩ) | Rsh(Ω) | FF(%) | Eta(%) | IRev2(A) | |
对比例 | 630.3 | 8.76 | 2.83 | 443 | 78.33 | 17.78 | 0.11 |
实施例 | 631.0 | 8.78 | 2.86 | 626 | 78.43 | 17.85 | 0.09 |
由以上数据可以看出改善后的实施例的电性能参数比原始工艺的对比例有较大改善。
Claims (2)
1.一种改善太阳能电池片均匀性的磷扩散方法,其特征为:使用的硅片是电阻率为1-3ohm.cm的156mm╳156mm规格的P型多晶硅片,常规酸制绒后具体步骤如下:
1)、准备阶段;2)、进舟阶段;3)、出舟阶段;4)、检漏阶段;5)、加热阶段;
6)、预氧化阶段;7)、扩散阶段;8)、后氧化阶段;9)、推进阶段;10)、扩散阶段;
11)、推进阶段;12)、冷却阶段;13)、进舟阶段;14)、出舟阶段。
2.一种改善太阳能电池片均匀性的磷扩散方法,其特征为:使用的硅片是电阻率为1-3ohm.cm的156mm╳156mm规格的P型多晶硅片,常规酸制绒后具体步骤如下:
1)、准备阶段:荷兰TEMPRESS扩散炉内通入氮气5slm,压力5pa;
2)、进舟阶段:炉内通入氮气5slm,压力5pa,持续时间8min;
3)、出舟阶段:炉内通入氮气5slm,压力-30pa,持续时间8min;
4)、检漏阶段:炉内通入氮气6.5slm,压力-200pa,持续时间2min;
5)、加热阶段:炉内通入氮气13.5slm,压力10pa,持续时间15min;
6)、预氧化阶段:炉内通入氮气6slm,压力12pa,持续时间2min;
7)、扩散阶段:炉内通入氮气6slm,压力12pa,持续时间15min,温度780℃-820℃;
8)、后氧化阶段:炉内通入氮气6slm,压力12pa,持续时间7min;
9)、推进阶段:炉内通入氮气6slm,压力12pa,持续时间6min;
10)、扩散阶段:炉内通入氮气6slm,压力12pa,持续时间2min,温度850℃-870℃;
11)、推进阶段:炉内通入氮气6slm,压力12pa,持续时间6min;
12)、冷却阶段:炉内通入氮气12slm,压力12pa,持续时间15min;
13)、进舟阶段:炉内通入氮气10slm,压力-30pa,持续时间8min;
14)、出舟阶段:炉内通入氮气10slm,压力5pa,持续时间8min。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310694365.4A CN103646999A (zh) | 2013-12-18 | 2013-12-18 | 一种改善太阳能电池片均匀性的磷扩散方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310694365.4A CN103646999A (zh) | 2013-12-18 | 2013-12-18 | 一种改善太阳能电池片均匀性的磷扩散方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN103646999A true CN103646999A (zh) | 2014-03-19 |
Family
ID=50252191
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310694365.4A Pending CN103646999A (zh) | 2013-12-18 | 2013-12-18 | 一种改善太阳能电池片均匀性的磷扩散方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103646999A (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104120494A (zh) * | 2014-06-25 | 2014-10-29 | 上饶光电高科技有限公司 | 一种适用于提升晶体硅太阳能电池转换效率的扩散工艺 |
CN104319308A (zh) * | 2014-09-16 | 2015-01-28 | 上饶光电高科技有限公司 | 一种提高晶体硅太阳能电池扩散均匀性的方法 |
CN107690693A (zh) * | 2015-06-09 | 2018-02-13 | 国际太阳能研究中心康斯坦茨协会 | 掺杂硅晶片的方法 |
CN113066894A (zh) * | 2021-02-02 | 2021-07-02 | 普乐新能源科技(徐州)有限公司 | 一种适用于hbc电池的硼扩散方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101916799A (zh) * | 2010-07-22 | 2010-12-15 | 苏州阿特斯阳光电力科技有限公司 | 一种晶体硅太阳能电池选择性发射结的制备方法 |
CN102691107A (zh) * | 2012-06-11 | 2012-09-26 | 上海超日(洛阳)太阳能有限公司 | 一种太阳能电池制备扩散工艺 |
CN102732967A (zh) * | 2012-06-01 | 2012-10-17 | 上饶光电高科技有限公司 | 一种选择性发射极晶体硅太阳电池的磷浆扩散工艺 |
CN102856435A (zh) * | 2012-09-05 | 2013-01-02 | 浙江鸿禧光伏科技股份有限公司 | 一种改善se刻蚀后方阻均匀性的扩散方法 |
-
2013
- 2013-12-18 CN CN201310694365.4A patent/CN103646999A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101916799A (zh) * | 2010-07-22 | 2010-12-15 | 苏州阿特斯阳光电力科技有限公司 | 一种晶体硅太阳能电池选择性发射结的制备方法 |
CN102732967A (zh) * | 2012-06-01 | 2012-10-17 | 上饶光电高科技有限公司 | 一种选择性发射极晶体硅太阳电池的磷浆扩散工艺 |
CN102691107A (zh) * | 2012-06-11 | 2012-09-26 | 上海超日(洛阳)太阳能有限公司 | 一种太阳能电池制备扩散工艺 |
CN102856435A (zh) * | 2012-09-05 | 2013-01-02 | 浙江鸿禧光伏科技股份有限公司 | 一种改善se刻蚀后方阻均匀性的扩散方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104120494A (zh) * | 2014-06-25 | 2014-10-29 | 上饶光电高科技有限公司 | 一种适用于提升晶体硅太阳能电池转换效率的扩散工艺 |
CN104319308A (zh) * | 2014-09-16 | 2015-01-28 | 上饶光电高科技有限公司 | 一种提高晶体硅太阳能电池扩散均匀性的方法 |
CN104319308B (zh) * | 2014-09-16 | 2017-02-08 | 上饶光电高科技有限公司 | 一种提高晶体硅太阳能电池扩散均匀性的方法 |
CN107690693A (zh) * | 2015-06-09 | 2018-02-13 | 国际太阳能研究中心康斯坦茨协会 | 掺杂硅晶片的方法 |
CN107690693B (zh) * | 2015-06-09 | 2022-01-07 | 国际太阳能研究中心康斯坦茨协会 | 掺杂硅晶片的方法 |
CN113066894A (zh) * | 2021-02-02 | 2021-07-02 | 普乐新能源科技(徐州)有限公司 | 一种适用于hbc电池的硼扩散方法 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN106057980B (zh) | 一种晶体硅太阳能电池的磷扩散方法 | |
CN104409339B (zh) | 一种硅片的p扩散方法和太阳能电池的制备方法 | |
CN102820383B (zh) | 多晶硅太阳能电池扩散方法 | |
CN103681976A (zh) | 一种高效低成本太阳电池扩散工艺 | |
CN103646999A (zh) | 一种改善太阳能电池片均匀性的磷扩散方法 | |
CN105780127B (zh) | 一种晶体硅太阳能电池的磷扩散方法 | |
CN105304753A (zh) | N型电池硼扩散工艺 | |
CN102005502B (zh) | 一种改善太阳能电池磷扩散均匀性的方法 | |
CN108321255A (zh) | 应用于多晶黑硅太阳能电池的低压扩散工艺 | |
CN103618023A (zh) | 一种高方阻扩散工艺 | |
CN108470798B (zh) | 一种用于晶硅电池片的含氧扩散方法 | |
CN102867879A (zh) | 一种优化晶硅太阳能电池扩散方块电阻均匀性的方法 | |
CN104821345B (zh) | 一种抗电势诱导衰减太阳能电池的制备方法 | |
CN105720135A (zh) | 一种太阳能电池的降温退火工艺 | |
CN104319308B (zh) | 一种提高晶体硅太阳能电池扩散均匀性的方法 | |
CN110323304A (zh) | 低压扩散低温氧化吸杂工艺 | |
CN102709389B (zh) | 一种双面背接触太阳能电池的制备方法 | |
CN109713084A (zh) | 一种改善太阳能电池扩散工艺中方阻均匀性的方法 | |
CN103633192A (zh) | 一种提升晶体硅太阳电池光电转换效率的扩散工艺 | |
CN209199965U (zh) | 一种晶硅太阳能电池生产用负压湿氧扩散装置 | |
CN108598216A (zh) | 一种提高光电转换效率的变温变压扩散工艺 | |
CN104882514A (zh) | 一种太阳能电池的制作方法 | |
CN108110090B (zh) | 一种n型双面电池制备方法 | |
CN104752564A (zh) | 一种提高多晶硅开路电压的新型扩散工艺 | |
CN105070654B (zh) | 一种提高晶体硅太阳能电池效率的扩散工艺 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140319 |