HK1220513A1 - 基板處理裝置、器件製造方法以及曝光方法 - Google Patents

基板處理裝置、器件製造方法以及曝光方法

Info

Publication number
HK1220513A1
HK1220513A1 HK16108441.0A HK16108441A HK1220513A1 HK 1220513 A1 HK1220513 A1 HK 1220513A1 HK 16108441 A HK16108441 A HK 16108441A HK 1220513 A1 HK1220513 A1 HK 1220513A1
Authority
HK
Hong Kong
Prior art keywords
processing apparatus
substrate processing
device manufacturing
exposure method
exposure
Prior art date
Application number
HK16108441.0A
Other languages
English (en)
Inventor
加藤正紀
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of HK1220513A1 publication Critical patent/HK1220513A1/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/24—Curved surfaces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Liquid Crystal (AREA)
HK16108441.0A 2013-06-14 2016-07-18 基板處理裝置、器件製造方法以及曝光方法 HK1220513A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013126150 2013-06-14
PCT/JP2014/062180 WO2014199744A1 (ja) 2013-06-14 2014-05-02 基板処理装置、デバイス製造方法及び露光方法

Publications (1)

Publication Number Publication Date
HK1220513A1 true HK1220513A1 (zh) 2017-05-05

Family

ID=52022046

Family Applications (2)

Application Number Title Priority Date Filing Date
HK16108441.0A HK1220513A1 (zh) 2013-06-14 2016-07-18 基板處理裝置、器件製造方法以及曝光方法
HK19100088.2A HK1257717A1 (zh) 2013-06-14 2016-07-18 掃描曝光裝置以及掃描曝光方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
HK19100088.2A HK1257717A1 (zh) 2013-06-14 2016-07-18 掃描曝光裝置以及掃描曝光方法

Country Status (6)

Country Link
JP (4) JP6344387B2 (zh)
KR (4) KR101924270B1 (zh)
CN (4) CN108873613B (zh)
HK (2) HK1220513A1 (zh)
TW (4) TWI646408B (zh)
WO (1) WO2014199744A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108885289B (zh) * 2016-03-04 2021-09-03 应用材料公司 线栅偏振器制造方法
JP7232586B2 (ja) * 2018-07-31 2023-03-03 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2830492B2 (ja) 1991-03-06 1998-12-02 株式会社ニコン 投影露光装置及び投影露光方法
JP3724517B2 (ja) * 1995-01-18 2005-12-07 株式会社ニコン 露光装置
JPH08288203A (ja) * 1995-04-11 1996-11-01 Nikon Corp 走査型露光装置
JPH08293461A (ja) * 1995-04-21 1996-11-05 Nikon Corp 照明装置および該装置を備えた投影露光装置
SG88824A1 (en) * 1996-11-28 2002-05-21 Nikon Corp Projection exposure method
JPH10256476A (ja) * 1997-03-12 1998-09-25 Canon Inc 柱状デバイス及び露光装置及びデバイス製造方法
US6416908B1 (en) * 2000-06-29 2002-07-09 Anvik Corporation Projection lithography on curved substrates
JP2003178954A (ja) * 2001-12-12 2003-06-27 Canon Inc 露光装置及びデバイスの製造方法
WO2005006417A1 (ja) * 2003-07-09 2005-01-20 Nikon Corporation 露光装置及びデバイス製造方法
JP2006235533A (ja) * 2005-02-28 2006-09-07 Nikon Corp 露光装置及びマイクロデバイスの製造方法
US20070084368A1 (en) * 2005-10-13 2007-04-19 Ryan Vest Dynamic UV-exposure and thermal development of relief image printing elements
JP2007227438A (ja) * 2006-02-21 2007-09-06 Nikon Corp 露光装置及び方法並びに光露光用マスク
JP2007227703A (ja) * 2006-02-24 2007-09-06 Seiko Epson Corp 基板分割方法、基板分割装置、電気光学装置、電子機器
JP4984631B2 (ja) * 2006-04-28 2012-07-25 株式会社ニコン 露光装置及び方法、露光用マスク、並びにデバイス製造方法
TWI481968B (zh) * 2006-09-08 2015-04-21 尼康股份有限公司 A mask, an exposure device, and an element manufacturing method
JP5104107B2 (ja) * 2007-08-02 2012-12-19 ウシオ電機株式会社 帯状ワークの露光装置及び帯状ワークの露光装置におけるフォーカス調整方法
EP2048543B1 (en) * 2007-10-09 2013-12-04 ASML Netherlands B.V. An optical focus sensor, an inspection apparatus and a lithographic apparatus
US8264666B2 (en) * 2009-03-13 2012-09-11 Nikon Corporation Exposure apparatus, exposure method, and method of manufacturing device
US8625076B2 (en) * 2010-02-09 2014-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer edge exposure module
JP5724564B2 (ja) * 2010-04-13 2015-05-27 株式会社ニコン マスクケース、マスクユニット、露光装置、基板処理装置及びデバイス製造方法
JPWO2011129369A1 (ja) * 2010-04-13 2013-07-18 株式会社ニコン 露光装置、基板処理装置及びデバイス製造方法
JP2011221536A (ja) * 2010-04-13 2011-11-04 Nikon Corp マスク移動装置、露光装置、基板処理装置及びデバイス製造方法
KR101837917B1 (ko) * 2011-04-25 2018-03-12 가부시키가이샤 니콘 기판처리장치
CN103477286A (zh) * 2011-09-07 2013-12-25 株式会社尼康 基板处理装置

Also Published As

Publication number Publication date
KR20200012040A (ko) 2020-02-04
HK1257717A1 (zh) 2019-10-25
TW201908877A (zh) 2019-03-01
TWI646408B (zh) 2019-01-01
CN110045580A (zh) 2019-07-23
WO2014199744A1 (ja) 2014-12-18
JP6451826B2 (ja) 2019-01-16
KR20190067257A (ko) 2019-06-14
CN108873613B (zh) 2020-11-13
CN106896651B (zh) 2018-06-12
TWI752469B (zh) 2022-01-11
JP2018077507A (ja) 2018-05-17
CN110045580B (zh) 2021-07-23
JP7070598B2 (ja) 2022-05-18
TWI604275B (zh) 2017-11-01
TW202032294A (zh) 2020-09-01
KR20160021191A (ko) 2016-02-24
JP2019045874A (ja) 2019-03-22
CN105308507A (zh) 2016-02-03
KR102072956B1 (ko) 2020-02-03
KR20180128522A (ko) 2018-12-03
TW201809916A (zh) 2018-03-16
KR101924270B1 (ko) 2018-11-30
CN105308507B (zh) 2018-12-25
CN108873613A (zh) 2018-11-23
JP6344387B2 (ja) 2018-06-20
TWI693480B (zh) 2020-05-11
KR101988818B1 (ko) 2019-06-12
JP6690695B2 (ja) 2020-04-28
TW201502716A (zh) 2015-01-16
CN106896651A (zh) 2017-06-27
KR102178173B1 (ko) 2020-11-12
JPWO2014199744A1 (ja) 2017-02-23
JP2020170162A (ja) 2020-10-15

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20230429