HK1199326A1 - Semiconductor light emitting device and light emitting device - Google Patents

Semiconductor light emitting device and light emitting device

Info

Publication number
HK1199326A1
HK1199326A1 HK14112724.2A HK14112724A HK1199326A1 HK 1199326 A1 HK1199326 A1 HK 1199326A1 HK 14112724 A HK14112724 A HK 14112724A HK 1199326 A1 HK1199326 A1 HK 1199326A1
Authority
HK
Hong Kong
Prior art keywords
light emitting
emitting device
semiconductor light
semiconductor
light
Prior art date
Application number
HK14112724.2A
Other languages
English (en)
Chinese (zh)
Inventor
Yosuke Akimoto
Akihiro Kojima
Miyoko Shimada
Hideyuki Tomizawa
Yoshiaki Sugizaki
Hideto Furuyama
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of HK1199326A1 publication Critical patent/HK1199326A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
HK14112724.2A 2013-02-19 2014-12-19 Semiconductor light emitting device and light emitting device HK1199326A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013030331A JP2014160736A (ja) 2013-02-19 2013-02-19 半導体発光装置及び発光装置

Publications (1)

Publication Number Publication Date
HK1199326A1 true HK1199326A1 (en) 2015-06-26

Family

ID=47913180

Family Applications (1)

Application Number Title Priority Date Filing Date
HK14112724.2A HK1199326A1 (en) 2013-02-19 2014-12-19 Semiconductor light emitting device and light emitting device

Country Status (5)

Country Link
US (1) US9006764B2 (xx)
EP (1) EP2768033A3 (xx)
JP (1) JP2014160736A (xx)
HK (1) HK1199326A1 (xx)
TW (1) TWI513065B (xx)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5900284B2 (ja) 2012-10-25 2016-04-06 豊田合成株式会社 半導体発光素子および発光装置
JP5971090B2 (ja) * 2012-11-14 2016-08-17 豊田合成株式会社 半導体発光素子および発光装置
JP6282493B2 (ja) * 2014-03-12 2018-02-21 スタンレー電気株式会社 半導体発光装置
JP6271380B2 (ja) 2014-09-12 2018-01-31 アルパッド株式会社 半導体装置の製造装置と半導体装置の製造方法
JP6376386B2 (ja) * 2014-09-25 2018-08-22 株式会社デンソー 配線基板
WO2016120398A1 (en) * 2015-01-30 2016-08-04 Osram Opto Semiconductors Gmbh Method for producing a semiconductor component and semiconductor component
WO2016146658A1 (en) 2015-03-16 2016-09-22 Plessey Semiconductors Limited Light emitting diode chip and a method for the manufacture of a light emitting diode chip
JP6553378B2 (ja) * 2015-03-16 2019-07-31 アルパッド株式会社 半導体発光装置
KR102374268B1 (ko) * 2015-09-04 2022-03-17 삼성전자주식회사 발광소자 패키지
JP6604786B2 (ja) 2015-09-11 2019-11-13 三星電子株式会社 半導体発光装置およびその製造方法
JP6530460B2 (ja) * 2017-09-29 2019-06-12 アルパッド株式会社 半導体装置
JP6806218B2 (ja) * 2018-10-31 2021-01-06 日亜化学工業株式会社 発光装置、発光モジュール、発光装置及び発光モジュールの製造方法
US11756980B2 (en) 2019-05-14 2023-09-12 Seoul Viosys Co., Ltd. LED chip package and manufacturing method of the same
US11901397B2 (en) 2019-05-14 2024-02-13 Seoul Viosys Co., Ltd. LED chip having fan-out structure and manufacturing method of the same
US11855121B2 (en) 2019-05-14 2023-12-26 Seoul Viosys Co., Ltd. LED chip and manufacturing method of the same
JP2022532154A (ja) * 2019-05-14 2022-07-13 ソウル バイオシス カンパニー リミテッド Ｌｅｄチップ及びその製造方法
JPWO2021020393A1 (xx) * 2019-07-30 2021-02-04
US20220223558A1 (en) * 2019-08-27 2022-07-14 Mitsubishi Electric Corporation Semiconductor device

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000311982A (ja) 1999-04-26 2000-11-07 Toshiba Corp 半導体装置と半導体モジュールおよびそれらの製造方法
JP3589187B2 (ja) * 2000-07-31 2004-11-17 日亜化学工業株式会社 発光装置の形成方法
JP2004311677A (ja) * 2003-04-07 2004-11-04 Matsushita Electric Works Ltd 半導体発光素子
JP2006260969A (ja) 2005-03-17 2006-09-28 Lecip Corp 車両用表示灯
JP2006024965A (ja) 2005-09-29 2006-01-26 Toyoda Gosei Co Ltd 発光装置
KR100885894B1 (ko) 2006-09-29 2009-02-26 폴리트론 테크놀로지스 인크 Ｌｅｄ 발광 장치의 플래인 구조체
JP4921140B2 (ja) 2006-12-11 2012-04-25 シチズン電子株式会社 発光シートユニット及びイルミネーション装置
JP4986735B2 (ja) * 2007-06-25 2012-07-25 京セラ株式会社 照明用光源
JP2010009785A (ja) * 2008-06-24 2010-01-14 Harison Toshiba Lighting Corp 中空式面照明装置
JP4724222B2 (ja) 2008-12-12 2011-07-13 株式会社東芝 発光装置の製造方法
US20100237374A1 (en) * 2009-03-20 2010-09-23 Electronics And Telecommunications Research Institute Transparent Organic Light Emitting Diode Lighting Device
JP2011071272A (ja) 2009-09-25 2011-04-07 Toshiba Corp 半導体発光装置及びその製造方法
WO2011145794A1 (ko) * 2010-05-18 2011-11-24 서울반도체 주식회사 파장변환층을 갖는 발광 다이오드 칩과 그 제조 방법, 및 그것을 포함하는 패키지 및 그 제조 방법
JP5325834B2 (ja) * 2010-05-24 2013-10-23 株式会社東芝 半導体発光装置及びその製造方法
JP5449039B2 (ja) * 2010-06-07 2014-03-19 株式会社東芝 半導体発光装置及びその製造方法
JP5414627B2 (ja) * 2010-06-07 2014-02-12 株式会社東芝 半導体発光装置及びその製造方法
JP2012146738A (ja) * 2011-01-07 2012-08-02 Stanley Electric Co Ltd Ｌｅｄモジュール及びｌｅｄランプ

Also Published As

Publication number Publication date
US9006764B2 (en) 2015-04-14
EP2768033A2 (en) 2014-08-20
EP2768033A3 (en) 2016-04-13
TWI513065B (zh) 2015-12-11
JP2014160736A (ja) 2014-09-04
US20140231842A1 (en) 2014-08-21
TW201434184A (zh) 2014-09-01

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