HK1198845A1 - 降低的噪聲 感測 - Google Patents

降低的噪聲 感測

Info

Publication number
HK1198845A1
HK1198845A1 HK14112355.8A HK14112355A HK1198845A1 HK 1198845 A1 HK1198845 A1 HK 1198845A1 HK 14112355 A HK14112355 A HK 14112355A HK 1198845 A1 HK1198845 A1 HK 1198845A1
Authority
HK
Hong Kong
Prior art keywords
dram
sensing
reduced noise
noise
reduced
Prior art date
Application number
HK14112355.8A
Other languages
English (en)
Inventor
．崔
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of HK1198845A1 publication Critical patent/HK1198845A1/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/02—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding parasitic signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4087—Address decoders, e.g. bit - or word line decoders; Multiple line decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/002—Isolation gates, i.e. gates coupling bit lines to the sense amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
HK14112355.8A 2011-10-04 2014-12-08 降低的噪聲 感測 HK1198845A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161542986P 2011-10-04 2011-10-04
PCT/CA2012/000918 WO2013049920A1 (en) 2011-10-04 2012-10-03 Reduced noise dram sensing

Publications (1)

Publication Number Publication Date
HK1198845A1 true HK1198845A1 (zh) 2015-06-12

Family

ID=47992465

Family Applications (1)

Application Number Title Priority Date Filing Date
HK14112355.8A HK1198845A1 (zh) 2011-10-04 2014-12-08 降低的噪聲 感測

Country Status (7)

Country Link
US (1) US8824231B2 (zh)
EP (1) EP2764515A4 (zh)
KR (1) KR20140079447A (zh)
CN (1) CN103858171A (zh)
HK (1) HK1198845A1 (zh)
TW (1) TW201337925A (zh)
WO (1) WO2013049920A1 (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105448343B (zh) * 2014-08-29 2019-09-27 展讯通信（上海）有限公司 一种只读存储单元和只读存储器
CN105741874B (zh) 2014-12-08 2019-10-25 中芯国际集成电路制造(上海)有限公司 用于快闪存储器的双位线读出电路和读出方法
KR102311512B1 (ko) * 2015-08-21 2021-10-13 에스케이하이닉스 주식회사 반도체 장치
CN105895147B (zh) * 2016-05-20 2019-01-15 西安紫光国芯半导体有限公司 一种基于开放位线结构的动态存储器
KR102602338B1 (ko) * 2017-11-30 2023-11-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치
US10559352B2 (en) 2018-01-05 2020-02-11 Qualcomm Incorporated Bitline-driven sense amplifier clocking scheme
CN112513987A (zh) * 2018-11-30 2021-03-16 拉姆伯斯公司 具有多个电压域的dram设备
US11763891B2 (en) * 2020-05-28 2023-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for reliable sensing of memory cells
TWI783473B (zh) * 2020-05-28 2022-11-11 台灣積體電路製造股份有限公司 記憶體系統及其操作方法
CN116564375B (zh) * 2023-07-12 2023-12-01 长鑫存储技术有限公司 存储器及其配置方法和读取控制方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2982905B2 (ja) * 1989-10-02 1999-11-29 三菱電機株式会社 ダイナミック型半導体記憶装置
JP3302796B2 (ja) 1992-09-22 2002-07-15 株式会社東芝 半導体記憶装置
JP3281215B2 (ja) 1995-03-16 2002-05-13 株式会社東芝 ダイナミック型半導体記憶装置
JP2010109101A (ja) * 2008-10-29 2010-05-13 Elpida Memory Inc 半導体装置
KR101622922B1 (ko) * 2009-03-06 2016-05-20 삼성전자 주식회사 개선된 로컬 입출력라인 프리차아지 스킴을 갖는 반도체 메모리 장치
JP2010231828A (ja) * 2009-03-26 2010-10-14 Elpida Memory Inc 半導体記憶装置
JP2013531860A (ja) * 2010-06-10 2013-08-08 モサイド・テクノロジーズ・インコーポレーテッド センス増幅器およびビット線分離を備える半導体メモリデバイス
JP5650475B2 (ja) * 2010-09-14 2015-01-07 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置及びその制御方法

Also Published As

Publication number Publication date
EP2764515A4 (en) 2015-07-01
EP2764515A1 (en) 2014-08-13
CN103858171A (zh) 2014-06-11
US8824231B2 (en) 2014-09-02
WO2013049920A1 (en) 2013-04-11
US20130083615A1 (en) 2013-04-04
TW201337925A (zh) 2013-09-16
KR20140079447A (ko) 2014-06-26

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