HK1189299A1 - 改進的背面照明圖像傳感器架構及其製造方法 - Google Patents
改進的背面照明圖像傳感器架構及其製造方法Info
- Publication number
- HK1189299A1 HK1189299A1 HK14102337.2A HK14102337A HK1189299A1 HK 1189299 A1 HK1189299 A1 HK 1189299A1 HK 14102337 A HK14102337 A HK 14102337A HK 1189299 A1 HK1189299 A1 HK 1189299A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- image sensor
- back side
- making same
- illuminated image
- side illuminated
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/423,045 US8692344B2 (en) | 2012-03-16 | 2012-03-16 | Back side illuminated image sensor architecture, and method of making same |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1189299A1 true HK1189299A1 (zh) | 2014-05-30 |
Family
ID=49136287
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK14102337.2A HK1189299A1 (zh) | 2012-03-16 | 2014-03-10 | 改進的背面照明圖像傳感器架構及其製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8692344B2 (zh) |
KR (1) | KR101457790B1 (zh) |
CN (1) | CN103311256B (zh) |
HK (1) | HK1189299A1 (zh) |
TW (1) | TWI479650B (zh) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5324890B2 (ja) * | 2008-11-11 | 2013-10-23 | ラピスセミコンダクタ株式会社 | カメラモジュールおよびその製造方法 |
US20130278818A1 (en) * | 2012-04-19 | 2013-10-24 | Gary Edwin Sutton | Curved sensor system |
US20140118526A1 (en) * | 2012-10-30 | 2014-05-01 | Gary Edwin Sutton | Curvilinear sensor system |
US8823126B2 (en) * | 2012-05-04 | 2014-09-02 | Hong Kong Applied Science and Technology Research Institute Company Limited | Low cost backside illuminated CMOS image sensor package with high integration |
US9496247B2 (en) * | 2013-08-26 | 2016-11-15 | Optiz, Inc. | Integrated camera module and method of making same |
US9461190B2 (en) | 2013-09-24 | 2016-10-04 | Optiz, Inc. | Low profile sensor package with cooling feature and method of making same |
US9496297B2 (en) | 2013-12-05 | 2016-11-15 | Optiz, Inc. | Sensor package with cooling feature and method of making same |
US9667900B2 (en) * | 2013-12-09 | 2017-05-30 | Optiz, Inc. | Three dimensional system-on-chip image sensor package |
US9606235B2 (en) * | 2014-01-16 | 2017-03-28 | The Boeing Company | Laser metrology system and method |
EP2908341B1 (en) * | 2014-02-18 | 2018-07-11 | ams AG | Semiconductor device with surface integrated focusing element |
TWI556420B (zh) * | 2014-04-18 | 2016-11-01 | 光寶電子(廣州)有限公司 | 用於增加組裝平整度的影像擷取模組及其組裝方法 |
US9985063B2 (en) | 2014-04-22 | 2018-05-29 | Optiz, Inc. | Imaging device with photo detectors and color filters arranged by color transmission characteristics and absorption coefficients |
US9666730B2 (en) | 2014-08-18 | 2017-05-30 | Optiz, Inc. | Wire bond sensor package |
US10139619B2 (en) | 2015-02-12 | 2018-11-27 | Optiz, Inc. | Back side illumination image sensor with non-planar optical interface |
US9543347B2 (en) | 2015-02-24 | 2017-01-10 | Optiz, Inc. | Stress released image sensor package structure and method |
DE102015104208A1 (de) | 2015-03-20 | 2016-09-22 | Osram Opto Semiconductors Gmbh | Sensorvorrichtung |
JP6165297B1 (ja) * | 2016-06-13 | 2017-07-19 | 日本メクトロン株式会社 | 基板検査装置および基板製造方法 |
US9996725B2 (en) | 2016-11-03 | 2018-06-12 | Optiz, Inc. | Under screen sensor assembly |
KR102558497B1 (ko) * | 2018-01-08 | 2023-07-21 | 엘지이노텍 주식회사 | 이미지 센서 |
US11942503B2 (en) | 2018-05-08 | 2024-03-26 | Eastern Blue Technologies, Inc. | Module and methods of assembly for large area flat panel detectors |
CN110034145B (zh) * | 2019-04-23 | 2021-09-14 | 德淮半导体有限公司 | 图像传感器及其形成方法 |
US11408589B2 (en) | 2019-12-05 | 2022-08-09 | Optiz, Inc. | Monolithic multi-focus light source device |
KR20210158012A (ko) * | 2020-06-23 | 2021-12-30 | 삼성전자주식회사 | 시모스 이미지 센서 패키지 |
CN112216710B (zh) * | 2020-10-12 | 2021-06-04 | 北京智创芯源科技有限公司 | 红外焦平面探测器芯片及其制备方法 |
CN113903759B (zh) * | 2021-12-09 | 2022-03-25 | 武汉市聚芯微电子有限责任公司 | 半导体结构、感光装置以及感光系统 |
Family Cites Families (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IL123207A0 (en) | 1998-02-06 | 1998-09-24 | Shellcase Ltd | Integrated circuit device |
IL133453A0 (en) | 1999-12-10 | 2001-04-30 | Shellcase Ltd | Methods for producing packaged integrated circuit devices and packaged integrated circuit devices produced thereby |
US7033664B2 (en) | 2002-10-22 | 2006-04-25 | Tessera Technologies Hungary Kft | Methods for producing packaged integrated circuit devices and packaged integrated circuit devices produced thereby |
US6972480B2 (en) | 2003-06-16 | 2005-12-06 | Shellcase Ltd. | Methods and apparatus for packaging integrated circuit devices |
JP2007528120A (ja) | 2003-07-03 | 2007-10-04 | テッセラ テクノロジーズ ハンガリー コルラートルト フェレロェセーギュー タールシャシャーグ | 集積回路装置をパッケージングする方法及び装置 |
JP2006135752A (ja) * | 2004-11-08 | 2006-05-25 | Matsushita Electric Works Ltd | 半導体装置とそれを用いた装置及び半導体リレー |
US7936062B2 (en) | 2006-01-23 | 2011-05-03 | Tessera Technologies Ireland Limited | Wafer level chip packaging |
US20070190747A1 (en) | 2006-01-23 | 2007-08-16 | Tessera Technologies Hungary Kft. | Wafer level packaging to lidded chips |
CN100590879C (zh) * | 2006-05-09 | 2010-02-17 | 台湾积体电路制造股份有限公司 | 背侧光感测装置以及形成背侧光感测装置的方法 |
US7829438B2 (en) | 2006-10-10 | 2010-11-09 | Tessera, Inc. | Edge connect wafer level stacking |
US8513789B2 (en) | 2006-10-10 | 2013-08-20 | Tessera, Inc. | Edge connect wafer level stacking with leads extending along edges |
US7901989B2 (en) | 2006-10-10 | 2011-03-08 | Tessera, Inc. | Reconstituted wafer level stacking |
US7935568B2 (en) | 2006-10-31 | 2011-05-03 | Tessera Technologies Ireland Limited | Wafer-level fabrication of lidded chips with electrodeposited dielectric coating |
US7807508B2 (en) | 2006-10-31 | 2010-10-05 | Tessera Technologies Hungary Kft. | Wafer-level fabrication of lidded chips with electrodeposited dielectric coating |
US7791199B2 (en) | 2006-11-22 | 2010-09-07 | Tessera, Inc. | Packaged semiconductor chips |
US8569876B2 (en) | 2006-11-22 | 2013-10-29 | Tessera, Inc. | Packaged semiconductor chips with array |
US7749886B2 (en) | 2006-12-20 | 2010-07-06 | Tessera, Inc. | Microelectronic assemblies having compliancy and methods therefor |
KR101460141B1 (ko) | 2007-03-05 | 2014-12-02 | 인벤사스 코포레이션 | 관통 비아에 의해 전면 컨택트에 연결되는 배면 컨택트를 갖는 칩 |
JP2011501410A (ja) | 2007-10-10 | 2011-01-06 | テッセラ,インコーポレイテッド | 頑健な多層配線要素および埋設された超小型電子素子とのアセンブリ |
JP4457142B2 (ja) * | 2007-10-17 | 2010-04-28 | シャープ株式会社 | 固体撮像素子、カメラモジュールおよび電子情報機器 |
US7800192B2 (en) * | 2008-02-08 | 2010-09-21 | Omnivision Technologies, Inc. | Backside illuminated image sensor having deep light reflective trenches |
US20100053407A1 (en) | 2008-02-26 | 2010-03-04 | Tessera, Inc. | Wafer level compliant packages for rear-face illuminated solid state image sensors |
US20090212381A1 (en) | 2008-02-26 | 2009-08-27 | Tessera, Inc. | Wafer level packages for rear-face illuminated solid state image sensors |
US7859033B2 (en) | 2008-07-09 | 2010-12-28 | Eastman Kodak Company | Wafer level processing for backside illuminated sensors |
JP2010219425A (ja) | 2009-03-18 | 2010-09-30 | Toshiba Corp | 半導体装置 |
US7923799B2 (en) * | 2009-06-09 | 2011-04-12 | Aptina Imaging Corporation | Image sensors with light guides |
US8791575B2 (en) | 2010-07-23 | 2014-07-29 | Tessera, Inc. | Microelectronic elements having metallic pads overlying vias |
US8598695B2 (en) | 2010-07-23 | 2013-12-03 | Tessera, Inc. | Active chip on carrier or laminated chip having microelectronic element embedded therein |
US9640437B2 (en) | 2010-07-23 | 2017-05-02 | Tessera, Inc. | Methods of forming semiconductor elements using micro-abrasive particle stream |
US8796135B2 (en) | 2010-07-23 | 2014-08-05 | Tessera, Inc. | Microelectronic elements with rear contacts connected with via first or via middle structures |
US8697569B2 (en) | 2010-07-23 | 2014-04-15 | Tessera, Inc. | Non-lithographic formation of three-dimensional conductive elements |
US8847376B2 (en) | 2010-07-23 | 2014-09-30 | Tessera, Inc. | Microelectronic elements with post-assembly planarization |
US8686565B2 (en) | 2010-09-16 | 2014-04-01 | Tessera, Inc. | Stacked chip assembly having vertical vias |
US8685793B2 (en) | 2010-09-16 | 2014-04-01 | Tessera, Inc. | Chip assembly having via interconnects joined by plating |
US8610259B2 (en) | 2010-09-17 | 2013-12-17 | Tessera, Inc. | Multi-function and shielded 3D interconnects |
US8847380B2 (en) | 2010-09-17 | 2014-09-30 | Tessera, Inc. | Staged via formation from both sides of chip |
KR101095945B1 (ko) | 2011-02-03 | 2011-12-19 | 테쎄라 노쓰 아메리카, 아이엔씨. | 상이한 파장을 균일하게 수광하기 위한 흡광 재료를 포함하는 이면 조사 센서 패키지 |
US20120199924A1 (en) | 2011-02-03 | 2012-08-09 | Tessera Research Llc | Bsi image sensor package with variable light transmission for even reception of different wavelengths |
KR101133154B1 (ko) | 2011-02-03 | 2012-04-06 | 디지털옵틱스 코포레이션 이스트 | 상이한 파장을 균일하게 수광하기 위한 차등 높이 실리콘을 포함하는 이면 조사 센서 패키지 |
-
2012
- 2012-03-16 US US13/423,045 patent/US8692344B2/en active Active
- 2012-04-20 CN CN201210117321.0A patent/CN103311256B/zh active Active
-
2013
- 2013-01-28 TW TW102103097A patent/TWI479650B/zh active
- 2013-03-13 KR KR1020130026879A patent/KR101457790B1/ko active IP Right Grant
-
2014
- 2014-03-10 HK HK14102337.2A patent/HK1189299A1/zh unknown
Also Published As
Publication number | Publication date |
---|---|
KR20130105491A (ko) | 2013-09-25 |
KR101457790B1 (ko) | 2014-11-03 |
TW201340303A (zh) | 2013-10-01 |
CN103311256A (zh) | 2013-09-18 |
US20130242155A1 (en) | 2013-09-19 |
CN103311256B (zh) | 2016-04-27 |
US8692344B2 (en) | 2014-04-08 |
TWI479650B (zh) | 2015-04-01 |
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