HK1188330A1 - 雙側圖像傳感器 - Google Patents
雙側圖像傳感器Info
- Publication number
- HK1188330A1 HK1188330A1 HK14101174.0A HK14101174A HK1188330A1 HK 1188330 A1 HK1188330 A1 HK 1188330A1 HK 14101174 A HK14101174 A HK 14101174A HK 1188330 A1 HK1188330 A1 HK 1188330A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- double
- image sensor
- sided image
- sided
- sensor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/442,562 US8686342B2 (en) | 2012-04-09 | 2012-04-09 | Double-sided image sensor formed on a single semiconductor wafer die |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1188330A1 true HK1188330A1 (zh) | 2014-04-25 |
Family
ID=49291548
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK14101174.0A HK1188330A1 (zh) | 2012-04-09 | 2014-02-10 | 雙側圖像傳感器 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8686342B2 (zh) |
CN (1) | CN103367380B (zh) |
HK (1) | HK1188330A1 (zh) |
TW (1) | TWI502735B (zh) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9153565B2 (en) | 2012-06-01 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Image sensors with a high fill-factor |
US8957358B2 (en) * | 2012-04-27 | 2015-02-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | CMOS image sensor chips with stacked scheme and methods for forming the same |
US8629524B2 (en) | 2012-04-27 | 2014-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus for vertically integrated backside illuminated image sensors |
US10090349B2 (en) | 2012-08-09 | 2018-10-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | CMOS image sensor chips with stacked scheme and methods for forming the same |
KR101402750B1 (ko) * | 2012-09-26 | 2014-06-11 | (주)실리콘화일 | 3차원 구조를 가지는 이미지센서의 분리형 단위화소 |
JP6303803B2 (ja) * | 2013-07-03 | 2018-04-04 | ソニー株式会社 | 固体撮像装置およびその製造方法 |
US9887228B2 (en) * | 2014-01-20 | 2018-02-06 | Himax Imaging, Inc. | Image sensor with oblique pick up plug and semiconductor structure comprising the same |
KR102261855B1 (ko) * | 2014-06-13 | 2021-06-07 | 삼성전자주식회사 | 색분리 소자를 포함하는 적층형 이미지 센서 및 상기 이미지 센서를 포함하는 촬상 장치 |
KR102383649B1 (ko) | 2014-08-19 | 2022-04-08 | 삼성전자주식회사 | Cmos 이미지 센서 |
US9826214B2 (en) * | 2014-09-08 | 2017-11-21 | Microsoft Technology Licensing, Llc. | Variable resolution pixel |
US9774801B2 (en) * | 2014-12-05 | 2017-09-26 | Qualcomm Incorporated | Solid state image sensor with enhanced charge capacity and dynamic range |
US9741755B2 (en) | 2014-12-22 | 2017-08-22 | Google Inc. | Physical layout and structure of RGBZ pixel cell unit for RGBZ image sensor |
CN106981495B (zh) * | 2016-01-15 | 2019-10-25 | 中芯国际集成电路制造(上海)有限公司 | 一种cmos图像传感器及其制作方法 |
KR102541701B1 (ko) * | 2016-01-15 | 2023-06-13 | 삼성전자주식회사 | 씨모스 이미지 센서 |
CN108604592B (zh) | 2016-02-09 | 2022-12-16 | 索尼公司 | 半导体装置、半导体装置的制造方法、固态成像装置以及电子设备 |
US9806117B2 (en) * | 2016-03-15 | 2017-10-31 | Omnivision Technologies, Inc. | Biased deep trench isolation |
JP6789653B2 (ja) * | 2016-03-31 | 2020-11-25 | キヤノン株式会社 | 光電変換装置およびカメラ |
US10002870B2 (en) | 2016-08-16 | 2018-06-19 | Texas Instruments Incorporated | Process enhancement using double sided epitaxial on substrate |
TWI633788B (zh) | 2017-06-30 | 2018-08-21 | 晶相光電股份有限公司 | 主動式畫素感測器 |
CN107978614A (zh) * | 2017-12-22 | 2018-05-01 | 德淮半导体有限公司 | 一种图像传感器及其制备方法 |
CN110634892B (zh) * | 2018-06-22 | 2022-02-15 | 中芯集成电路(宁波)有限公司 | 光电探测器及其制造方法、图像传感器 |
US11101311B2 (en) | 2018-06-22 | 2021-08-24 | Ningbo Semiconductor International Corporation | Photodetector and fabrication method, and imaging sensor |
US11079282B2 (en) * | 2018-11-28 | 2021-08-03 | Semiconductor Components Industries, Llc | Flexible interconnect sensing devices and related methods |
US11121169B2 (en) * | 2019-06-25 | 2021-09-14 | Omnivision Technologies, Inc. | Metal vertical transfer gate with high-k dielectric passivation lining |
CN110299375B (zh) * | 2019-07-08 | 2021-06-18 | 芯盟科技有限公司 | 半导体结构及其形成方法 |
US11438486B2 (en) | 2019-08-26 | 2022-09-06 | Qualcomm Incorporated | 3D active depth sensing with laser pulse train bursts and a gated sensor |
US11437416B2 (en) * | 2019-09-10 | 2022-09-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pixel device layout to reduce pixel noise |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6150708A (en) | 1998-11-13 | 2000-11-21 | Advanced Micro Devices, Inc. | Advanced CMOS circuitry that utilizes both sides of a wafer surface for increased circuit density |
US6927432B2 (en) | 2003-08-13 | 2005-08-09 | Motorola, Inc. | Vertically integrated photosensor for CMOS imagers |
KR100775058B1 (ko) * | 2005-09-29 | 2007-11-08 | 삼성전자주식회사 | 픽셀 및 이를 이용한 이미지 센서, 그리고 상기 이미지센서를 포함하는 이미지 처리 시스템 |
US7202140B1 (en) | 2005-12-07 | 2007-04-10 | Chartered Semiconductor Manufacturing, Ltd | Method to fabricate Ge and Si devices together for performance enhancement |
US8013342B2 (en) | 2007-11-14 | 2011-09-06 | International Business Machines Corporation | Double-sided integrated circuit chips |
US8049256B2 (en) * | 2006-10-05 | 2011-11-01 | Omnivision Technologies, Inc. | Active pixel sensor having a sensor wafer connected to a support circuit wafer |
JP5258207B2 (ja) | 2007-05-29 | 2013-08-07 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置 |
US7858915B2 (en) * | 2008-03-31 | 2010-12-28 | Eastman Kodak Company | Active pixel sensor having two wafers |
US8471939B2 (en) * | 2008-08-01 | 2013-06-25 | Omnivision Technologies, Inc. | Image sensor having multiple sensing layers |
US8137995B2 (en) | 2008-12-11 | 2012-03-20 | Stats Chippac, Ltd. | Double-sided semiconductor device and method of forming top-side and bottom-side interconnect structures |
US8405115B2 (en) * | 2009-01-28 | 2013-03-26 | Maxim Integrated Products, Inc. | Light sensor using wafer-level packaging |
US8299583B2 (en) | 2009-03-05 | 2012-10-30 | International Business Machines Corporation | Two-sided semiconductor structure |
US7915645B2 (en) | 2009-05-28 | 2011-03-29 | International Rectifier Corporation | Monolithic vertically integrated composite group III-V and group IV semiconductor device and method for fabricating same |
-
2012
- 2012-04-09 US US13/442,562 patent/US8686342B2/en active Active
-
2013
- 2013-04-08 TW TW102112397A patent/TWI502735B/zh active
- 2013-04-08 CN CN201310119815.7A patent/CN103367380B/zh active Active
-
2014
- 2014-02-10 HK HK14101174.0A patent/HK1188330A1/zh unknown
Also Published As
Publication number | Publication date |
---|---|
CN103367380A (zh) | 2013-10-23 |
US20130264467A1 (en) | 2013-10-10 |
US8686342B2 (en) | 2014-04-01 |
CN103367380B (zh) | 2016-05-18 |
TWI502735B (zh) | 2015-10-01 |
TW201347161A (zh) | 2013-11-16 |
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