HK1142870A1 - Method for controlling resistivity in ingots made of compensated feedstock silicon - Google Patents

Method for controlling resistivity in ingots made of compensated feedstock silicon

Info

Publication number
HK1142870A1
HK1142870A1 HK10109315.7A HK10109315A HK1142870A1 HK 1142870 A1 HK1142870 A1 HK 1142870A1 HK 10109315 A HK10109315 A HK 10109315A HK 1142870 A1 HK1142870 A1 HK 1142870A1
Authority
HK
Hong Kong
Prior art keywords
silicon
feedstock
gallium
compensated
aluminum
Prior art date
Application number
HK10109315.7A
Other languages
English (en)
Inventor
Fritz Kirscht
Vera Abrosimova
Matthias Heuer
Dieter Linke
Jean Patrice Rakotoniana
Kamel Ounadjela
Original Assignee
Calisolar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=40186057&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=HK1142870(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Calisolar Inc filed Critical Calisolar Inc
Publication of HK1142870A1 publication Critical patent/HK1142870A1/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/006—Controlling or regulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
HK10109315.7A 2007-06-27 2010-09-29 Method for controlling resistivity in ingots made of compensated feedstock silicon HK1142870A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/769,109 US7651566B2 (en) 2007-06-27 2007-06-27 Method and system for controlling resistivity in ingots made of compensated feedstock silicon
PCT/US2008/068644 WO2009003183A1 (fr) 2007-06-27 2008-06-27 Procédé et système pour contrôler la résistivité dans des lingots faits de silicium de charge d'alimentation compensé

Publications (1)

Publication Number Publication Date
HK1142870A1 true HK1142870A1 (en) 2010-12-17

Family

ID=40186057

Family Applications (1)

Application Number Title Priority Date Filing Date
HK10109315.7A HK1142870A1 (en) 2007-06-27 2010-09-29 Method for controlling resistivity in ingots made of compensated feedstock silicon

Country Status (8)

Country Link
US (1) US7651566B2 (fr)
EP (2) EP2418173A3 (fr)
JP (1) JP5559681B2 (fr)
CN (1) CN101918314A (fr)
AT (1) ATE532749T1 (fr)
ES (1) ES2377343T3 (fr)
HK (1) HK1142870A1 (fr)
WO (1) WO2009003183A1 (fr)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8968467B2 (en) * 2007-06-27 2015-03-03 Silicor Materials Inc. Method and system for controlling resistivity in ingots made of compensated feedstock silicon
US20110233478A1 (en) * 2008-12-01 2011-09-29 Sumitomo Chemical Company, Limited Silicon for n-type solar cells and a method of producing phosphorus-doped silicon
NO329987B1 (no) 2009-02-26 2011-01-31 Harsharn Tathgar Halvkontinuerlig fremgangsmate for dannelse, separasjon og smelting av store, rene silisiumkrystaller
US7858427B2 (en) * 2009-03-03 2010-12-28 Applied Materials, Inc. Crystalline silicon solar cells on low purity substrate
WO2010126639A1 (fr) * 2009-04-29 2010-11-04 Calisolar, Inc. Commande d'un processus de purification d'un matériau de silicium métallurgique amélioré (si-umg)
US8547121B2 (en) * 2009-04-29 2013-10-01 Silicor Materials Inc. Quality control process for UMG-SI feedstock
WO2010127184A1 (fr) * 2009-04-29 2010-11-04 Calisolar, Inc. Procédé de contrôle de qualité pour une charge de départ de silicium de qualité métallurgique améliorée
JP5077966B2 (ja) * 2009-08-27 2012-11-21 シャープ株式会社 シリコンインゴットの製造方法
KR20120040016A (ko) * 2010-10-18 2012-04-26 엘지전자 주식회사 태양 전지용 기판 및 태양 전지
JP5194146B2 (ja) * 2010-12-28 2013-05-08 ジルトロニック アクチエンゲゼルシャフト シリコン単結晶の製造方法、シリコン単結晶、およびウエハ
NO335110B1 (no) * 2011-10-06 2014-09-15 Elkem Solar As Fremgangsmåte for fremstilling av silisiummonokrystall og multikrystalline silisiumingoter
JP5470349B2 (ja) 2011-10-17 2014-04-16 ジルトロニック アクチエンゲゼルシャフト ｐ型シリコン単結晶およびその製造方法
CN102400219A (zh) * 2011-11-30 2012-04-04 东海晶澳太阳能科技有限公司 一种硼-镓共掺准单晶硅及其制备方法
JP2013129564A (ja) * 2011-12-21 2013-07-04 Siltronic Ag シリコン単結晶基板およびその製造方法
CN102560646B (zh) * 2012-03-20 2015-05-20 浙江大学 一种掺杂电阻率均匀的n型铸造硅单晶及其制备方法
US10724148B2 (en) 2014-01-21 2020-07-28 Infineon Technologies Ag Silicon ingot and method of manufacturing a silicon ingot
DE102014107590B3 (de) * 2014-05-28 2015-10-01 Infineon Technologies Ag Halbleitervorrichtung, Siliziumwafer und Verfahren zum Herstellen eines Siliziumwafers
US10337117B2 (en) 2014-11-07 2019-07-02 Infineon Technologies Ag Method of manufacturing a silicon ingot and silicon ingot
RU2570084C1 (ru) * 2014-12-03 2015-12-10 Федеральное государственное бюджетное образовательное учреждение высшего образования "Тверской государственный университет" Способ получения поликристаллов кремния
DE102015114177A1 (de) * 2015-08-26 2017-03-02 Infineon Technologies Ag Halbleitervorrichtung, Siliziumwafer und Verfahren zum Herstellen eines Siliziumwafers
CN105970284B (zh) * 2016-05-30 2019-08-16 上海超硅半导体有限公司 一种p型单晶硅片及其制造方法
CN106294302B (zh) * 2016-08-10 2018-10-09 宁夏高创特能源科技有限公司 一种硅靶材配料调节极性、电阻率测算方法
CN109576787A (zh) * 2019-01-14 2019-04-05 浙江晶科能源有限公司 采用物理法提纯的硅料制备的多晶硅锭和多晶硅棒及方法
CN111762786B (zh) * 2020-07-13 2022-08-12 昆明理工大学 一种硅熔体可控凝固去除杂质元素的方法
CN115341271A (zh) * 2021-05-13 2022-11-15 内蒙古中环协鑫光伏材料有限公司 一种控制单晶电阻率轴向衰减速率的方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004538231A (ja) * 2001-08-10 2004-12-24 エバーグリーン ソーラー， インコーポレイテッド 半導体をドーピングするための方法および装置
JP3855082B2 (ja) * 2002-10-07 2006-12-06 国立大学法人東京農工大学 多結晶シリコンの作製方法、多結晶シリコン、及び太陽電池
JP2004140120A (ja) * 2002-10-16 2004-05-13 Canon Inc 多結晶シリコン基板
NO333319B1 (no) * 2003-12-29 2013-05-06 Elkem As Silisiummateriale for fremstilling av solceller
NO322246B1 (no) 2004-12-27 2006-09-04 Elkem Solar As Fremgangsmate for fremstilling av rettet storknede silisiumingots

Also Published As

Publication number Publication date
WO2009003183A1 (fr) 2008-12-31
ES2377343T3 (es) 2012-03-26
US7651566B2 (en) 2010-01-26
EP2173660B1 (fr) 2011-11-09
EP2418173A2 (fr) 2012-02-15
EP2173660A1 (fr) 2010-04-14
JP5559681B2 (ja) 2014-07-23
ATE532749T1 (de) 2011-11-15
US20090026423A1 (en) 2009-01-29
EP2418173A3 (fr) 2012-09-05
CN101918314A (zh) 2010-12-15
JP2010531805A (ja) 2010-09-30
EP2173660A4 (fr) 2010-08-04

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20150627