HK1139789A1 - Layers composite comprising a pyrogenic zinc oxide layer and field-effect transistor comprising this composite - Google Patents

Layers composite comprising a pyrogenic zinc oxide layer and field-effect transistor comprising this composite

Info

Publication number
HK1139789A1
HK1139789A1 HK10106284.0A HK10106284A HK1139789A1 HK 1139789 A1 HK1139789 A1 HK 1139789A1 HK 10106284 A HK10106284 A HK 10106284A HK 1139789 A1 HK1139789 A1 HK 1139789A1
Authority
HK
Hong Kong
Prior art keywords
composite
field
oxide layer
zinc oxide
effect transistor
Prior art date
Application number
HK10106284.0A
Other languages
English (en)
Inventor
Petrat F Frank-Martin
Heiko Thiem
Sven Hill
Andre Ebbers
Koshi Okamura
Roland Schmechel
Original Assignee
Evonik Degussa Gmbh
Karlsruhe Forschzent
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Evonik Degussa Gmbh, Karlsruhe Forschzent filed Critical Evonik Degussa Gmbh
Publication of HK1139789A1 publication Critical patent/HK1139789A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/22—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Thin Film Transistor (AREA)
  • Pigments, Carbon Blacks, Or Wood Stains (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Paints Or Removers (AREA)
HK10106284.0A 2007-04-19 2010-06-25 Layers composite comprising a pyrogenic zinc oxide layer and field-effect transistor comprising this composite HK1139789A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE200710018431 DE102007018431A1 (de) 2007-04-19 2007-04-19 Pyrogenes Zinkoxid enthaltender Verbund von Schichten und diesen Verbund aufweisender Feldeffekttransistor
PCT/EP2008/052820 WO2008128821A1 (en) 2007-04-19 2008-03-10 Layers composite comprising a pyrogenic zinc oxide layer and field-effect transistor comprising this composite

Publications (1)

Publication Number Publication Date
HK1139789A1 true HK1139789A1 (en) 2010-09-24

Family

ID=39672852

Family Applications (1)

Application Number Title Priority Date Filing Date
HK10106284.0A HK1139789A1 (en) 2007-04-19 2010-06-25 Layers composite comprising a pyrogenic zinc oxide layer and field-effect transistor comprising this composite

Country Status (8)

Country Link
US (1) US8907333B2 (xx)
EP (1) EP2137758A1 (xx)
JP (1) JP5538210B2 (xx)
KR (1) KR101156280B1 (xx)
CN (1) CN101675506B (xx)
DE (1) DE102007018431A1 (xx)
HK (1) HK1139789A1 (xx)
WO (1) WO2008128821A1 (xx)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007040726A1 (de) * 2007-08-29 2009-03-05 Robert Bosch Gmbh Gassensor
JP5682880B2 (ja) * 2008-04-28 2015-03-11 独立行政法人物質・材料研究機構 ナノ結晶粒子分散液と電子デバイス並びにその製造方法
DE102008058040A1 (de) * 2008-11-18 2010-05-27 Evonik Degussa Gmbh Formulierungen enthaltend ein Gemisch von ZnO-Cubanen und sie einsetzendes Verfahren zur Herstellung halbleitender ZnO-Schichten
DE102009009337A1 (de) 2009-02-17 2010-08-19 Evonik Degussa Gmbh Verfahren zur Herstellung halbleitender Indiumoxid-Schichten, nach dem Verfahren hergestellte Indiumoxid-Schichten und deren Verwendung
DE102009009338A1 (de) 2009-02-17 2010-08-26 Evonik Degussa Gmbh Indiumalkoxid-haltige Zusammensetzungen, Verfahren zu ihrer Herstellung und ihre Verwendung
DE102009028802B3 (de) 2009-08-21 2011-03-24 Evonik Degussa Gmbh Verfahren zur Herstellung Metalloxid-haltiger Schichten, nach dem Verfahren herstellbare Metalloxid-haltige Schicht und deren Verwendung
DE102009028801B3 (de) 2009-08-21 2011-04-14 Evonik Degussa Gmbh Verfahren zur Herstellung Indiumoxid-haltiger Schichten, nach dem Verfahren herstellbare Indiumoxid-haltige Schicht und deren Verwendung
DE102010006269B4 (de) 2009-12-15 2014-02-13 Evonik Industries Ag Verfahren zur Erzeugung leitender oder halbleitender metalloxidischer Schichten auf Substraten, auf diese Weise hergestellte Substrate und deren Verwendung
DE102009054998A1 (de) 2009-12-18 2011-06-22 Evonik Degussa GmbH, 45128 Verfahren zur Herstellung von Indiumchlordialkoxiden
DE102009054997B3 (de) 2009-12-18 2011-06-01 Evonik Degussa Gmbh Verfahren zur Herstellung von Indiumoxid-haltigen Schichten, nach dem Verfahren hergestellte Indiumoxid-haltige Schichten und ihre Verwendung
WO2011108381A1 (en) * 2010-03-05 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
DE102010031895A1 (de) 2010-07-21 2012-01-26 Evonik Degussa Gmbh Indiumoxoalkoxide für die Herstellung Indiumoxid-haltiger Schichten
DE102010043668B4 (de) 2010-11-10 2012-06-21 Evonik Degussa Gmbh Verfahren zur Herstellung von Indiumoxid-haltigen Schichten, nach dem Verfahren hergestellte Indiumoxid-haltige Schichten und ihre Verwendung
DE102011084145A1 (de) * 2011-10-07 2013-04-11 Evonik Degussa Gmbh Verfahren zur Herstellung von hochperformanten und elektrisch stabilen, halbleitenden Metalloxidschichten, nach dem Verfahren hergestellte Schichten und deren Verwendung
JP6131949B2 (ja) * 2012-06-01 2017-05-24 三菱化学株式会社 金属酸化物含有半導体層の製造方法及び電子デバイス
US8802568B2 (en) 2012-09-27 2014-08-12 Sensirion Ag Method for manufacturing chemical sensor with multiple sensor cells
US11371951B2 (en) 2012-09-27 2022-06-28 Sensirion Ag Gas sensor comprising a set of one or more sensor cells
DE102014202718A1 (de) 2014-02-14 2015-08-20 Evonik Degussa Gmbh Beschichtungszusammensetzung, Verfahren zu ihrer Herstellung und ihre Verwendung

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3242468B2 (ja) 1992-11-09 2001-12-25 三井金属鉱業株式会社 導電性針状酸化亜鉛の製造方法
DE59903364D1 (de) 1998-02-19 2002-12-19 Goldschmidt Ag Th Phosphorsäureester und ihre Verwendung als Dispergiermittel
DE19940797A1 (de) 1999-08-27 2001-03-01 Goldschmidt Ag Th Durch Akoxylierung erhaltene blockcopolymere, styrenoxidhaltige Polyalkylenoxide und deren Verwendung
DE10212680A1 (de) 2002-03-22 2003-10-09 Degussa Nanoskaliges Zinkoxid, Verfahren zu seiner Herstellung und Verwendung
US7339187B2 (en) * 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
US7189992B2 (en) * 2002-05-21 2007-03-13 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures having a transparent channel
DE10232115A1 (de) 2002-07-16 2004-02-05 Goldschmidt Ag Organopolysiloxane zur Entschäumung wässriger Systeme
DE10235758A1 (de) 2002-08-05 2004-02-26 Degussa Ag Dotiertes Zinkoxidpulver, Verfahren zu seiner Herstellung und Verwendung
US7262463B2 (en) * 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
DE10343728A1 (de) * 2003-09-22 2005-04-21 Degussa Zinkoxidpulver
DE10348825A1 (de) 2003-10-21 2005-06-02 Goldschmidt Ag Dispergiermittel zur Herstellung wässriger Pigmentpasten
DE102004003675A1 (de) * 2004-01-24 2005-08-11 Degussa Ag Dispersion und Beschichtungszubereitung enthaltend nanoskaliges Zinkoxid
WO2006008175A1 (en) * 2004-07-23 2006-01-26 Eth Zurich Rapid flame synthesis of doped zno nanorods with controlled aspect ration
JP2006097884A (ja) * 2004-08-30 2006-04-13 Nsk Ltd シャフトと自在継手のヨークとの結合部
US7691666B2 (en) * 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) * 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
US20070093004A1 (en) * 2005-10-25 2007-04-26 Park Sang H Method of manufacturing thin film transistor including ZnO thin layer
DE102009009337A1 (de) * 2009-02-17 2010-08-19 Evonik Degussa Gmbh Verfahren zur Herstellung halbleitender Indiumoxid-Schichten, nach dem Verfahren hergestellte Indiumoxid-Schichten und deren Verwendung
DE102009009338A1 (de) * 2009-02-17 2010-08-26 Evonik Degussa Gmbh Indiumalkoxid-haltige Zusammensetzungen, Verfahren zu ihrer Herstellung und ihre Verwendung
DE102009028801B3 (de) * 2009-08-21 2011-04-14 Evonik Degussa Gmbh Verfahren zur Herstellung Indiumoxid-haltiger Schichten, nach dem Verfahren herstellbare Indiumoxid-haltige Schicht und deren Verwendung
DE102009028802B3 (de) * 2009-08-21 2011-03-24 Evonik Degussa Gmbh Verfahren zur Herstellung Metalloxid-haltiger Schichten, nach dem Verfahren herstellbare Metalloxid-haltige Schicht und deren Verwendung
DE102009050703B3 (de) * 2009-10-26 2011-04-21 Evonik Goldschmidt Gmbh Verfahren zur Selbstassemblierung elektrischer, elektronischer oder mikromechanischer Bauelemente auf einem Substrat und damit hergestelltes Erzeugnis
DE102009054998A1 (de) * 2009-12-18 2011-06-22 Evonik Degussa GmbH, 45128 Verfahren zur Herstellung von Indiumchlordialkoxiden
DE102009054997B3 (de) * 2009-12-18 2011-06-01 Evonik Degussa Gmbh Verfahren zur Herstellung von Indiumoxid-haltigen Schichten, nach dem Verfahren hergestellte Indiumoxid-haltige Schichten und ihre Verwendung
DE102010031592A1 (de) * 2010-07-21 2012-01-26 Evonik Degussa Gmbh Indiumoxoalkoxide für die Herstellung Indiumoxid-haltiger Schichten
DE102010031895A1 (de) * 2010-07-21 2012-01-26 Evonik Degussa Gmbh Indiumoxoalkoxide für die Herstellung Indiumoxid-haltiger Schichten

Also Published As

Publication number Publication date
US8907333B2 (en) 2014-12-09
JP5538210B2 (ja) 2014-07-02
JP2010525560A (ja) 2010-07-22
US20100132788A1 (en) 2010-06-03
CN101675506B (zh) 2012-08-08
DE102007018431A1 (de) 2008-10-30
KR101156280B1 (ko) 2012-06-13
EP2137758A1 (en) 2009-12-30
WO2008128821A1 (en) 2008-10-30
CN101675506A (zh) 2010-03-17
KR20100002258A (ko) 2010-01-06

Similar Documents

Publication Publication Date Title
HK1139789A1 (en) Layers composite comprising a pyrogenic zinc oxide layer and field-effect transistor comprising this composite
EP2660868A4 (en) LAMINATE STRUCTURE COMPRISING A THIN OXIDE SEMICONDUCTOR THIN FILM LAYER AND THIN FILM TRANSISTOR
GB201004524D0 (en) A cmos device having gate insulation layers of different type and thickness and method of forming the same
EP2011155A4 (en) TRANSISTOR AND METHOD THEREFOR WITH TWO-LAYER PASSIVATION
EP2191504A4 (en) DOUBLE-gate oxide ARRANGEMENT INTEGRATION
EP2486594A4 (en) OXIDE SEMICONDUCTOR LAYER AND SEMICONDUCTOR DEVICE
EP2302685A4 (en) OXIDE SEMICONDUCTOR AND THIN FILM TRANSISTOR THEREWITH
EP2483929A4 (en) SEMICONDUCTOR DEVICE WITH OXYGEN DIFFUSION SHOCK LAYER AND MANUFACTURING METHOD THEREFOR
EP2059449A4 (en) CLOSURE DEVICE WITH EXTERNAL GRIPPING LAYER
GB2453229B (en) Electroluminescent element and manufacturing method thereof
EP1976952A4 (en) ADHESIVE ENCAPSULATION COMPOSITION FILM AND ORGANIC ELECTROLUMINESCENCE DEVICE
EP2320467A4 (en) RESIN COMPOSITION, GATE INSULATING LAYER AND ORGANIC THIN-LAYER TRANSISTOR
EP2184794A4 (en) A METAL-DOTTED MOLYBDENOUSIDE LAYER ORGANIC ELECTROLUMINESCENCE ARRAY AND METHOD FOR THE PRODUCTION THEREOF
EP2217968A4 (en) ULTRADÜNNE POLYMERHAFTSCHICHT
EP2110855A4 (en) THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
EP2296173A4 (en) HEMT ASSEMBLY AND METHOD FOR PRODUCING THE HEMT ASSEMBLY
GB2453492B (en) Organic el device and manufacturing method thereof
EP2197782A4 (en) Connecting and bonding adjacent layers with nanostructures
EP2100317A4 (en) CAPACITIVE DEVICE WITH DOUBLE ELECTRIC LAYER
PL1900950T3 (pl) Warstwa poślizgowa z tworzywa sztucznego i element poślizgowy z taką warstwą
EP2045848A4 (en) ORGANIC ELECTROLUMINESCENT DEVICE MATERIAL AND ORGANIC ELECTROLUMINESCENCE DEVICE
EP2109162A4 (en) ORGANIC SEMICONDUCTOR COMPOSITE, ORGANIC TRANSISTOR MATERIAL, AND ORGANIC FIELD EFFECT TRANSISTOR
EP2111642A4 (en) ORGANIC TRANSISTOR AND MANUFACTURING METHOD THEREFOR
EP2519976A4 (en) FIELD EFFECT TRANSISTOR DEVICE COMPRISING A SUPERPOSITION OF A METAL GRID AND A BARRIER LAYER AGAINST OXYGEN
GB0722016D0 (en) A semiconductor layer structure

Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20190310