HK1132377A1 - One-time-programmable logic bit with multiple logic elements - Google Patents

One-time-programmable logic bit with multiple logic elements

Info

Publication number
HK1132377A1
HK1132377A1 HK09112289.6A HK09112289A HK1132377A1 HK 1132377 A1 HK1132377 A1 HK 1132377A1 HK 09112289 A HK09112289 A HK 09112289A HK 1132377 A1 HK1132377 A1 HK 1132377A1
Authority
HK
Hong Kong
Prior art keywords
time
bit
programmable logic
elements
logic
Prior art date
Application number
HK09112289.6A
Other languages
English (en)
Inventor
Sunhom Paak
Hsung Jai Im
Boon Yong Ang
Original Assignee
Xilinx Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xilinx Inc filed Critical Xilinx Inc
Publication of HK1132377A1 publication Critical patent/HK1132377A1/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11803—Masterslice integrated circuits using field effect technology
    • H01L27/11807—CMOS gate arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/60—Peripheral circuit regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Dram (AREA)
HK09112289.6A 2006-10-27 2009-12-30 One-time-programmable logic bit with multiple logic elements HK1132377A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/588,775 US7567449B2 (en) 2006-10-27 2006-10-27 One-time-programmable logic bit with multiple logic elements
PCT/US2007/022657 WO2008057257A2 (en) 2006-10-27 2007-10-25 One-time-programmable logic bit with multiple logic elements

Publications (1)

Publication Number Publication Date
HK1132377A1 true HK1132377A1 (en) 2010-02-19

Family

ID=39296054

Family Applications (1)

Application Number Title Priority Date Filing Date
HK09112289.6A HK1132377A1 (en) 2006-10-27 2009-12-30 One-time-programmable logic bit with multiple logic elements

Country Status (7)

Country Link
US (1) US7567449B2 (xx)
EP (1) EP2076921A2 (xx)
JP (1) JP4999017B2 (xx)
CN (1) CN101548376B (xx)
CA (1) CA2666120C (xx)
HK (1) HK1132377A1 (xx)
WO (1) WO2008057257A2 (xx)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7971115B2 (en) * 2009-01-31 2011-06-28 Xilinx, Inc. Method and apparatus for detecting and correcting errors in a parallel to serial circuit
KR101084217B1 (ko) * 2010-03-29 2011-11-17 삼성에스디아이 주식회사 배터리 팩, 및 배터리 팩의 제어 방법
KR101710180B1 (ko) 2010-09-02 2017-03-09 삼성디스플레이 주식회사 평판 표시 장치 및 평판 표시 장치용 원장기판
US8253475B2 (en) * 2010-10-08 2012-08-28 Winbond Electronics Corp. Fuse detecting apparatus
KR20130072855A (ko) * 2011-12-22 2013-07-02 에스케이하이닉스 주식회사 안티 퓨즈 회로 및 그 퓨즈 럽처 방법
KR101869751B1 (ko) * 2012-04-05 2018-06-21 에스케이하이닉스 주식회사 안티 퓨즈 회로
US8502555B1 (en) 2012-06-28 2013-08-06 Xilinx, Inc. Method of and circuit for preventing the alteration of a stored data value
US8803590B2 (en) * 2012-07-26 2014-08-12 Globalfoundries Singapore Pte. Ltd. High speed low power fuse circuit
US9165631B2 (en) * 2012-09-13 2015-10-20 Qualcomm Incorporated OTP scheme with multiple magnetic tunnel junction devices in a cell
US9646929B2 (en) * 2013-06-13 2017-05-09 GlobalFoundries, Inc. Making an efuse
US10127998B2 (en) * 2013-09-26 2018-11-13 Nxp Usa, Inc. Memory having one time programmable (OTP) elements and a method of programming the memory
US9672935B2 (en) * 2014-10-17 2017-06-06 Lattice Semiconductor Corporation Memory circuit having non-volatile memory cell and methods of using
USRE48570E1 (en) 2014-10-17 2021-05-25 Lattice Semiconductor Corporation Memory circuit having non-volatile memory cell and methods of using
CN107924428B (zh) * 2015-09-01 2022-03-15 弗莱克斯-罗技克斯技术公司 可编程逻辑ic的块存储器布局和体系架构及其操作方法
US10095889B2 (en) 2016-03-04 2018-10-09 Altera Corporation Techniques for protecting security features of integrated circuits
US9922723B1 (en) * 2017-01-17 2018-03-20 Nxp Usa, Inc. Volatile latch circuit with tamper resistant non-volatile latch backup
US10559357B1 (en) 2018-08-06 2020-02-11 Lattice Semiconductor Corporation Memory circuit having non-volatile memory cell and methods of using
CN112151098A (zh) 2019-06-27 2020-12-29 台湾积体电路制造股份有限公司 多熔丝记忆体单元电路
US11094387B2 (en) * 2019-06-27 2021-08-17 Taiwan Semiconductor Manufacturing Company Limited Multi-fuse memory cell circuit and method
US11984397B2 (en) * 2021-11-24 2024-05-14 Nanya Technology Corporation Semiconductor structure

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5200652A (en) 1991-11-13 1993-04-06 Micron Technology, Inc. Programmable/reprogrammable structure combining both antifuse and fuse elements
US5412593A (en) 1994-01-12 1995-05-02 Texas Instruments Incorporated Fuse and antifuse reprogrammable link for integrated circuits
KR0145221B1 (ko) * 1995-05-25 1998-08-17 김광호 반도체 메모리 소자의 스위치 회로
JPH10326496A (ja) 1997-05-26 1998-12-08 Hitachi Ltd 半導体記憶装置
US5966339A (en) * 1998-06-02 1999-10-12 International Business Machines Corporation Programmable/reprogrammable fuse
US6356496B1 (en) 2000-07-07 2002-03-12 Lucent Technologies Inc. Resistor fuse
DE10056590A1 (de) 2000-11-15 2002-05-23 Philips Corp Intellectual Pty Schaltungsanordnung
US6643760B2 (en) * 2001-04-30 2003-11-04 Zilog, Inc. Architecture to relax memory performance requirements
JP2003007081A (ja) * 2001-06-25 2003-01-10 Mitsubishi Electric Corp 半導体集積回路装置
US6906969B2 (en) 2002-09-24 2005-06-14 Infineon Technologies Aktiengesellschaft Hybrid fuses for redundancy
US20050087836A1 (en) 2003-10-22 2005-04-28 Taiwan Semiconductor Manufacturing Co. Electrically programmable polysilicon fuse with multiple level resistance and programming
US7098491B2 (en) * 2003-12-30 2006-08-29 Taiwan Semiconductor Manufacturing Company, Ltd. Protection circuit located under fuse window
TWI293757B (en) * 2004-05-27 2008-02-21 Novatek Microelectronics Corp Apparatus and method for reprogramming by using one-time programming element
US7304366B2 (en) 2004-08-02 2007-12-04 Taiwan Semiconductor Manufacturing Co., Ltd. Self correcting multiple-link fuse
JP4478980B2 (ja) * 2004-10-05 2010-06-09 エルピーダメモリ株式会社 ヒューズ回路及びそれを利用した半導体装置
KR100572622B1 (ko) * 2004-12-22 2006-04-24 삼성전자주식회사 멀티 타임 프로그래머블 반도체 메모리 장치 및 멀티 타임프로그래머블 반도체 메모리 장치의 멀티 타임 프로그래밍방법
JP2006253353A (ja) * 2005-03-10 2006-09-21 Matsushita Electric Ind Co Ltd 電気ヒューズモジュール
US7220671B2 (en) * 2005-03-31 2007-05-22 Intel Corporation Organometallic precursors for the chemical phase deposition of metal films in interconnect applications
US7420842B1 (en) * 2005-08-24 2008-09-02 Xilinx, Inc. Method of programming a three-terminal non-volatile memory element using source-drain bias
US7218567B1 (en) * 2005-09-23 2007-05-15 Xilinx, Inc. Method and apparatus for the protection of sensitive data within an integrated circuit

Also Published As

Publication number Publication date
WO2008057257A2 (en) 2008-05-15
WO2008057257A3 (en) 2008-07-10
JP2010507255A (ja) 2010-03-04
CN101548376B (zh) 2012-03-21
CA2666120A1 (en) 2008-05-15
CA2666120C (en) 2010-09-14
CN101548376A (zh) 2009-09-30
EP2076921A2 (en) 2009-07-08
US7567449B2 (en) 2009-07-28
JP4999017B2 (ja) 2012-08-15
US20080101146A1 (en) 2008-05-01

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