HK1055471A1 - Nanostructures - Google Patents

Nanostructures

Info

Publication number
HK1055471A1
HK1055471A1 HK03107640A HK03107640A HK1055471A1 HK 1055471 A1 HK1055471 A1 HK 1055471A1 HK 03107640 A HK03107640 A HK 03107640A HK 03107640 A HK03107640 A HK 03107640A HK 1055471 A1 HK1055471 A1 HK 1055471A1
Authority
HK
Hong Kong
Prior art keywords
nanostructures
Prior art date
Application number
HK03107640A
Other languages
English (en)
Inventor
Knut Wilfried Deppert
Carl Martin Hall Magnusson
Lars Ivar Samuelson
Thomas Johannes Krinke
Original Assignee
Btg Int Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB0010800A external-priority patent/GB0010800D0/en
Application filed by Btg Int Ltd filed Critical Btg Int Ltd
Publication of HK1055471A1 publication Critical patent/HK1055471A1/xx

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401Multistep manufacturing processes
    • H01L29/4011Multistep manufacturing processes for data storage electrodes
    • H01L29/40114Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00Processes for applying liquids or other fluent materials
    • B05D1/007Processes for applying liquids or other fluent materials using an electrostatic field
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82BNANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82BNANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N99/00Subject matter not provided for in other groups of this subclass
    • H10N99/05Devices based on quantum mechanical effects, e.g. quantum interference devices or metal single-electron transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Non-Volatile Memory (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
HK03107640A 2000-05-04 2003-10-22 Nanostructures HK1055471A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB0010800A GB0010800D0 (en) 2000-05-04 2000-05-04 Controlled particle deposition
GB0026958A GB0026958D0 (en) 2000-05-04 2000-11-03 Nanostructures
PCT/GB2001/001972 WO2001084238A1 (en) 2000-05-04 2001-05-04 Nanostructures

Publications (1)

Publication Number Publication Date
HK1055471A1 true HK1055471A1 (en) 2004-01-09

Family

ID=26244216

Family Applications (1)

Application Number Title Priority Date Filing Date
HK03107640A HK1055471A1 (en) 2000-05-04 2003-10-22 Nanostructures

Country Status (9)

Country Link
US (1) US7223444B2 (ja)
EP (1) EP1279068B1 (ja)
JP (2) JP4222757B2 (ja)
KR (1) KR100756211B1 (ja)
CN (1) CN100335968C (ja)
AU (1) AU784574B2 (ja)
CA (1) CA2406006C (ja)
HK (1) HK1055471A1 (ja)
WO (1) WO2001084238A1 (ja)

Families Citing this family (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3120112B2 (ja) * 1998-12-01 2000-12-25 科学技術庁金属材料技術研究所長 微小物の精密配置法
CN100335968C (zh) * 2000-05-04 2007-09-05 英国技术集团国际有限公司 纳米结构
EP1297387A2 (en) 2000-06-30 2003-04-02 President And Fellows of Harvard College Electric microcontact printing method and apparatus
KR100597014B1 (ko) * 2001-01-10 2006-07-06 재단법인서울대학교산학협력재단 물질의 결정 구조를 이용한 패턴 형성 방법 및 그 구조를갖는 기능성 소자
US7563711B1 (en) * 2001-07-25 2009-07-21 Nantero, Inc. Method of forming a carbon nanotube-based contact to semiconductor
JP3850718B2 (ja) * 2001-11-22 2006-11-29 株式会社東芝 加工方法
US8093144B2 (en) * 2002-05-24 2012-01-10 Massachusetts Institute Of Technology Patterning of nanostructures
US6548313B1 (en) * 2002-05-31 2003-04-15 Intel Corporation Amorphous carbon insulation and carbon nanotube wires
US7335908B2 (en) * 2002-07-08 2008-02-26 Qunano Ab Nanostructures and methods for manufacturing the same
AU2003214406A1 (en) * 2003-03-13 2004-09-30 Btg International Limited Mems devices on a nanometer scale
KR101064318B1 (ko) 2003-04-04 2011-09-14 큐나노에이비 Pn 접합을 갖는 나노위스커 및 이의 가공 방법
US7608147B2 (en) 2003-04-04 2009-10-27 Qunano Ab Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them
JP2005074578A (ja) 2003-09-01 2005-03-24 Sony Corp 微粒子アレイ及びその製造方法並びに磁気記録媒体
US20070157873A1 (en) * 2003-09-12 2007-07-12 Hauptmann Jonas R Method of fabrication and device comprising elongated nanosize elements
US7067341B2 (en) 2003-10-28 2006-06-27 Stmicroelectronics S.R.L. Single electron transistor manufacturing method by electro-migration of metallic nanoclusters
US7232771B2 (en) 2003-11-04 2007-06-19 Regents Of The University Of Minnesota Method and apparatus for depositing charge and/or nanoparticles
US7592269B2 (en) 2003-11-04 2009-09-22 Regents Of The University Of Minnesota Method and apparatus for depositing charge and/or nanoparticles
US7662706B2 (en) 2003-11-26 2010-02-16 Qunano Ab Nanostructures formed of branched nanowhiskers and methods of producing the same
US6991984B2 (en) * 2004-01-27 2006-01-31 Freescale Semiconductor, Inc. Method for forming a memory structure using a modified surface topography and structure thereof
US20050170177A1 (en) * 2004-01-29 2005-08-04 Crawford Julian S. Conductive filament
US7354850B2 (en) 2004-02-06 2008-04-08 Qunano Ab Directionally controlled growth of nanowhiskers
KR20050086237A (ko) * 2004-02-25 2005-08-30 삼성에스디아이 주식회사 전자방출표시장치용 전자방출원의 형성방법과 이를 이용한전지방출표시장치
US7528002B2 (en) * 2004-06-25 2009-05-05 Qunano Ab Formation of nanowhiskers on a substrate of dissimilar material
FR2877662B1 (fr) * 2004-11-09 2007-03-02 Commissariat Energie Atomique Reseau de particules et procede de realisation d'un tel reseau.
FR2883418B1 (fr) * 2005-03-15 2007-06-01 Commissariat Energie Atomique Procede de fabrication d'une diode electroluminescente a jonction pn nanostructuree et diode obtenue par un tel procede
KR100740984B1 (ko) * 2005-04-12 2007-07-19 재단법인서울대학교산학협력재단 나노입자의 집속 증착 패터닝 방법
EP1748030B1 (en) * 2005-07-07 2016-04-20 Fei Company Method and apparatus for statistical characterization of nano-particles
WO2007008088A1 (en) * 2005-07-08 2007-01-18 Nano Cluster Devices Ltd Nanoscale and microscale lithography methods and resultant devices
DE102005038121B3 (de) * 2005-08-11 2007-04-12 Siemens Ag Verfahren zur Integration funktioneller Nanostrukturen in mikro- und nanoelektrische Schaltkreise
TWI345804B (en) * 2005-08-17 2011-07-21 Lg Chemical Ltd Patterning method using coatings containing ionic components
KR100789581B1 (ko) 2005-08-17 2007-12-28 주식회사 엘지화학 이온 성분을 함유하는 코팅액을 이용한 패턴 형성 방법
US8240190B2 (en) * 2005-08-23 2012-08-14 Uwm Research Foundation, Inc. Ambient-temperature gas sensor
US8268405B2 (en) * 2005-08-23 2012-09-18 Uwm Research Foundation, Inc. Controlled decoration of carbon nanotubes with aerosol nanoparticles
US7309642B2 (en) 2005-11-09 2007-12-18 Hewlett-Packard Development Company, L.P. Metallic quantum dots fabricated by a superlattice structure
KR101265321B1 (ko) * 2005-11-14 2013-05-20 엘지디스플레이 주식회사 스탬프 제조 방법, 그를 이용한 박막트랜지스터 및액정표시장치의 제조 방법
US7826336B2 (en) * 2006-02-23 2010-11-02 Qunano Ab Data storage nanostructures
FI121540B (fi) * 2006-03-08 2010-12-31 Canatu Oy Menetelmä, jolla siirretään korkean aspektisuhteen omaavia molekyylirakenteita
US7550747B2 (en) * 2006-04-03 2009-06-23 Blaise Laurent Mouttet Parallel electron beam lithography stamp (PEBLS)
US7425715B2 (en) * 2006-05-05 2008-09-16 Blaise Laurent Mouttet Digital parallel electron beam lithography stamp
US8178341B2 (en) * 2006-08-25 2012-05-15 The University Of Vermont And State Agricultural College Electrostatic particle exposure system and method of exposing a target material to small particles
US8178403B2 (en) 2006-09-18 2012-05-15 Qunano Ab Method of producing precision vertical and horizontal layers in a vertical semiconductor structure
US8063450B2 (en) * 2006-09-19 2011-11-22 Qunano Ab Assembly of nanoscaled field effect transistors
CN101295131B (zh) * 2006-11-03 2011-08-31 中国科学院物理研究所 一种在绝缘衬底上制备纳米结构的方法
US20100052995A1 (en) * 2006-11-15 2010-03-04 Board Of Trustees Of Michigan State University Micropatterning of conductive graphite particles using microcontact printing
US8049203B2 (en) 2006-12-22 2011-11-01 Qunano Ab Nanoelectronic structure and method of producing such
WO2008079078A1 (en) 2006-12-22 2008-07-03 Qunano Ab Elevated led and method of producing such
US8183587B2 (en) 2006-12-22 2012-05-22 Qunano Ab LED with upstanding nanowire structure and method of producing such
WO2008079076A1 (en) * 2006-12-22 2008-07-03 Qunano Ab Led with upstanding nanowire structure and method of producing such
US20080220175A1 (en) 2007-01-22 2008-09-11 Lorenzo Mangolini Nanoparticles wtih grafted organic molecules
US20090014030A1 (en) * 2007-07-09 2009-01-15 Asml Netherlands B.V. Substrates and methods of using those substrates
JP5681965B2 (ja) * 2007-09-26 2015-03-11 瑞穂 森田 検出素子およびそれを用いた検出装置
CN101910050B (zh) * 2007-10-26 2013-09-25 昆南诺股份有限公司 相异材料上的纳米线生长
US8215074B2 (en) 2008-02-05 2012-07-10 International Business Machines Corporation Pattern formation employing self-assembled material
US10991545B2 (en) 2008-06-30 2021-04-27 Nexgen Semi Holding, Inc. Method and device for spatial charged particle bunching
US10566169B1 (en) 2008-06-30 2020-02-18 Nexgen Semi Holding, Inc. Method and device for spatial charged particle bunching
JP2010182824A (ja) * 2009-02-04 2010-08-19 Toshiba Corp 磁気ランダムアクセスメモリの製造方法及び混載メモリの製造方法
US8933526B2 (en) * 2009-07-15 2015-01-13 First Solar, Inc. Nanostructured functional coatings and devices
JP5599379B2 (ja) * 2011-11-04 2014-10-01 信越化学工業株式会社 太陽電池素子の製造方法
GB201207463D0 (en) 2012-04-30 2012-06-13 Ibm Methods and apparatuses for positioning nano-objects with aspect ratios
KR101349976B1 (ko) * 2012-07-13 2014-01-16 재단법인 멀티스케일 에너지시스템 연구단 나노입자로 조립된 3차원 구조물을 이용한 광학소자
FR2997420B1 (fr) 2012-10-26 2017-02-24 Commissariat Energie Atomique Procede de croissance d'au moins un nanofil a partir d'une couche d'un metal de transition nitrure obtenue en deux etapes
FR2997557B1 (fr) 2012-10-26 2016-01-01 Commissariat Energie Atomique Dispositif electronique a nanofil(s) muni d'une couche tampon en metal de transition, procede de croissance d'au moins un nanofil, et procede de fabrication d'un dispositif
CN103204458B (zh) * 2013-03-14 2015-06-03 西安交通大学 一种基于紫外光固化驻极体的自组装方法
CN104445053A (zh) * 2014-12-30 2015-03-25 西安建筑科技大学 柔性基底表面图形化组装纳米粒子的方法
EP3754051A1 (en) 2019-06-19 2020-12-23 Consejo Superior de Investigaciones Cientificas (CSIC) Method for nanostructured materials fabrication combining soft lithographic imprint, aluminum anodization and metal sputtering
EP4363642A1 (de) 2021-06-28 2024-05-08 Indorama Ventures Fibers Germany GmbH Elektrisch leitfähiges garn

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3108894A (en) * 1959-05-18 1963-10-29 Burroughs Corp Electrostatic charge production
FR1347012A (fr) * 1962-08-03 1963-12-27 Sames Mach Electrostat Nouveau procédé électrostatique d'émaillage humide à froid et appareil pour sa mise en oeuvre
US3436468A (en) * 1965-05-28 1969-04-01 Texas Instruments Inc Plastic bodies having regions of altered chemical structure and method of making same
US3640746A (en) * 1968-09-18 1972-02-08 Xerox Corp Adhesive contact electrification imaging
US4124287A (en) * 1977-03-31 1978-11-07 Xerox Corporation Imaging system utilizing uncharged marking particles
US4169903A (en) 1977-06-10 1979-10-02 Ball Corporation Electrostatic process for coating electrically conductive objects such as beverage cans
US4296370A (en) * 1979-10-11 1981-10-20 Rca Corporation Method of detecting a thin insulating film over a conductor
GB2148608B (en) 1983-10-22 1987-03-18 Stc Plc Forming conductive regions in polymeric materials
JPS6141762A (ja) 1984-08-06 1986-02-28 Res Dev Corp Of Japan 超微細パタ−ンの形成法
JPS6353254A (ja) 1986-08-21 1988-03-07 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン 乾式付着方法
US5066512A (en) * 1989-12-08 1991-11-19 International Business Machines Corporation Electrostatic deposition of lcd color filters
ATE197746T1 (de) 1990-05-31 2000-12-15 Canon Kk Verfahren zur verdrahtung eines halbleiterbauelementes
US5047649A (en) * 1990-10-09 1991-09-10 International Business Machines Corporation Method and apparatus for writing or etching narrow linewidth patterns on insulating materials
GB9213054D0 (en) 1992-06-19 1992-08-05 Hitachi Europ Ltd Atomic scale devices
GB9213423D0 (en) 1992-06-24 1992-08-05 Hitachi Europ Ltd Nanofabricated structures
US5534309A (en) * 1994-06-21 1996-07-09 Msp Corporation Method and apparatus for depositing particles on surfaces
EP0865078A1 (en) 1997-03-13 1998-09-16 Hitachi Europe Limited Method of depositing nanometre scale particles
JP3441923B2 (ja) * 1997-06-18 2003-09-02 キヤノン株式会社 カーボンナノチューブの製法
CN100335968C (zh) * 2000-05-04 2007-09-05 英国技术集团国际有限公司 纳米结构
EP1297387A2 (en) * 2000-06-30 2003-04-02 President And Fellows of Harvard College Electric microcontact printing method and apparatus

Also Published As

Publication number Publication date
JP5085215B2 (ja) 2012-11-28
EP1279068B1 (en) 2014-07-09
CN1427962A (zh) 2003-07-02
EP1279068A1 (en) 2003-01-29
WO2001084238A1 (en) 2001-11-08
KR100756211B1 (ko) 2007-09-06
CA2406006C (en) 2011-02-15
US20030102444A1 (en) 2003-06-05
CA2406006A1 (en) 2001-11-08
AU784574B2 (en) 2006-05-04
JP4222757B2 (ja) 2009-02-12
US7223444B2 (en) 2007-05-29
KR20030053474A (ko) 2003-06-28
JP2003531738A (ja) 2003-10-28
JP2008006581A (ja) 2008-01-17
CN100335968C (zh) 2007-09-05
AU5493301A (en) 2001-11-12

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Legal Events

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PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20150504