HK1055471A1 - Nanostructures - Google Patents
NanostructuresInfo
- Publication number
- HK1055471A1 HK1055471A1 HK03107640A HK03107640A HK1055471A1 HK 1055471 A1 HK1055471 A1 HK 1055471A1 HK 03107640 A HK03107640 A HK 03107640A HK 03107640 A HK03107640 A HK 03107640A HK 1055471 A1 HK1055471 A1 HK 1055471A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- nanostructures
- Prior art date
Links
- 239000002086 nanomaterial Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/007—Processes for applying liquids or other fluent materials using an electrostatic field
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N99/00—Subject matter not provided for in other groups of this subclass
- H10N99/05—Devices based on quantum mechanical effects, e.g. quantum interference devices or metal single-electron transistors
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Non-Volatile Memory (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Carbon And Carbon Compounds (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0010800A GB0010800D0 (en) | 2000-05-04 | 2000-05-04 | Controlled particle deposition |
GB0026958A GB0026958D0 (en) | 2000-05-04 | 2000-11-03 | Nanostructures |
PCT/GB2001/001972 WO2001084238A1 (en) | 2000-05-04 | 2001-05-04 | Nanostructures |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1055471A1 true HK1055471A1 (en) | 2004-01-09 |
Family
ID=26244216
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK03107640A HK1055471A1 (en) | 2000-05-04 | 2003-10-22 | Nanostructures |
Country Status (9)
Country | Link |
---|---|
US (1) | US7223444B2 (xx) |
EP (1) | EP1279068B1 (xx) |
JP (2) | JP4222757B2 (xx) |
KR (1) | KR100756211B1 (xx) |
CN (1) | CN100335968C (xx) |
AU (1) | AU784574B2 (xx) |
CA (1) | CA2406006C (xx) |
HK (1) | HK1055471A1 (xx) |
WO (1) | WO2001084238A1 (xx) |
Families Citing this family (66)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3120112B2 (ja) * | 1998-12-01 | 2000-12-25 | 科学技術庁金属材料技術研究所長 | 微小物の精密配置法 |
CN100335968C (zh) * | 2000-05-04 | 2007-09-05 | 英国技术集团国际有限公司 | 纳米结构 |
EP1297387A2 (en) | 2000-06-30 | 2003-04-02 | President And Fellows of Harvard College | Electric microcontact printing method and apparatus |
KR100597014B1 (ko) * | 2001-01-10 | 2006-07-06 | 재단법인서울대학교산학협력재단 | 물질의 결정 구조를 이용한 패턴 형성 방법 및 그 구조를갖는 기능성 소자 |
US7563711B1 (en) * | 2001-07-25 | 2009-07-21 | Nantero, Inc. | Method of forming a carbon nanotube-based contact to semiconductor |
JP3850718B2 (ja) * | 2001-11-22 | 2006-11-29 | 株式会社東芝 | 加工方法 |
US8093144B2 (en) * | 2002-05-24 | 2012-01-10 | Massachusetts Institute Of Technology | Patterning of nanostructures |
US6548313B1 (en) * | 2002-05-31 | 2003-04-15 | Intel Corporation | Amorphous carbon insulation and carbon nanotube wires |
US7335908B2 (en) * | 2002-07-08 | 2008-02-26 | Qunano Ab | Nanostructures and methods for manufacturing the same |
AU2003214406A1 (en) * | 2003-03-13 | 2004-09-30 | Btg International Limited | Mems devices on a nanometer scale |
KR101064318B1 (ko) | 2003-04-04 | 2011-09-14 | 큐나노에이비 | Pn 접합을 갖는 나노위스커 및 이의 가공 방법 |
US7608147B2 (en) | 2003-04-04 | 2009-10-27 | Qunano Ab | Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them |
JP2005074578A (ja) | 2003-09-01 | 2005-03-24 | Sony Corp | 微粒子アレイ及びその製造方法並びに磁気記録媒体 |
US20070157873A1 (en) * | 2003-09-12 | 2007-07-12 | Hauptmann Jonas R | Method of fabrication and device comprising elongated nanosize elements |
US7067341B2 (en) | 2003-10-28 | 2006-06-27 | Stmicroelectronics S.R.L. | Single electron transistor manufacturing method by electro-migration of metallic nanoclusters |
US7232771B2 (en) | 2003-11-04 | 2007-06-19 | Regents Of The University Of Minnesota | Method and apparatus for depositing charge and/or nanoparticles |
US7592269B2 (en) | 2003-11-04 | 2009-09-22 | Regents Of The University Of Minnesota | Method and apparatus for depositing charge and/or nanoparticles |
US7662706B2 (en) | 2003-11-26 | 2010-02-16 | Qunano Ab | Nanostructures formed of branched nanowhiskers and methods of producing the same |
US6991984B2 (en) * | 2004-01-27 | 2006-01-31 | Freescale Semiconductor, Inc. | Method for forming a memory structure using a modified surface topography and structure thereof |
US20050170177A1 (en) * | 2004-01-29 | 2005-08-04 | Crawford Julian S. | Conductive filament |
US7354850B2 (en) | 2004-02-06 | 2008-04-08 | Qunano Ab | Directionally controlled growth of nanowhiskers |
KR20050086237A (ko) * | 2004-02-25 | 2005-08-30 | 삼성에스디아이 주식회사 | 전자방출표시장치용 전자방출원의 형성방법과 이를 이용한전지방출표시장치 |
US7528002B2 (en) * | 2004-06-25 | 2009-05-05 | Qunano Ab | Formation of nanowhiskers on a substrate of dissimilar material |
FR2877662B1 (fr) * | 2004-11-09 | 2007-03-02 | Commissariat Energie Atomique | Reseau de particules et procede de realisation d'un tel reseau. |
FR2883418B1 (fr) * | 2005-03-15 | 2007-06-01 | Commissariat Energie Atomique | Procede de fabrication d'une diode electroluminescente a jonction pn nanostructuree et diode obtenue par un tel procede |
KR100740984B1 (ko) * | 2005-04-12 | 2007-07-19 | 재단법인서울대학교산학협력재단 | 나노입자의 집속 증착 패터닝 방법 |
EP1748030B1 (en) * | 2005-07-07 | 2016-04-20 | Fei Company | Method and apparatus for statistical characterization of nano-particles |
WO2007008088A1 (en) * | 2005-07-08 | 2007-01-18 | Nano Cluster Devices Ltd | Nanoscale and microscale lithography methods and resultant devices |
DE102005038121B3 (de) * | 2005-08-11 | 2007-04-12 | Siemens Ag | Verfahren zur Integration funktioneller Nanostrukturen in mikro- und nanoelektrische Schaltkreise |
TWI345804B (en) * | 2005-08-17 | 2011-07-21 | Lg Chemical Ltd | Patterning method using coatings containing ionic components |
KR100789581B1 (ko) | 2005-08-17 | 2007-12-28 | 주식회사 엘지화학 | 이온 성분을 함유하는 코팅액을 이용한 패턴 형성 방법 |
US8240190B2 (en) * | 2005-08-23 | 2012-08-14 | Uwm Research Foundation, Inc. | Ambient-temperature gas sensor |
US8268405B2 (en) * | 2005-08-23 | 2012-09-18 | Uwm Research Foundation, Inc. | Controlled decoration of carbon nanotubes with aerosol nanoparticles |
US7309642B2 (en) | 2005-11-09 | 2007-12-18 | Hewlett-Packard Development Company, L.P. | Metallic quantum dots fabricated by a superlattice structure |
KR101265321B1 (ko) * | 2005-11-14 | 2013-05-20 | 엘지디스플레이 주식회사 | 스탬프 제조 방법, 그를 이용한 박막트랜지스터 및액정표시장치의 제조 방법 |
US7826336B2 (en) * | 2006-02-23 | 2010-11-02 | Qunano Ab | Data storage nanostructures |
FI121540B (fi) * | 2006-03-08 | 2010-12-31 | Canatu Oy | Menetelmä, jolla siirretään korkean aspektisuhteen omaavia molekyylirakenteita |
US7550747B2 (en) * | 2006-04-03 | 2009-06-23 | Blaise Laurent Mouttet | Parallel electron beam lithography stamp (PEBLS) |
US7425715B2 (en) * | 2006-05-05 | 2008-09-16 | Blaise Laurent Mouttet | Digital parallel electron beam lithography stamp |
US8178341B2 (en) * | 2006-08-25 | 2012-05-15 | The University Of Vermont And State Agricultural College | Electrostatic particle exposure system and method of exposing a target material to small particles |
US8178403B2 (en) | 2006-09-18 | 2012-05-15 | Qunano Ab | Method of producing precision vertical and horizontal layers in a vertical semiconductor structure |
US8063450B2 (en) * | 2006-09-19 | 2011-11-22 | Qunano Ab | Assembly of nanoscaled field effect transistors |
CN101295131B (zh) * | 2006-11-03 | 2011-08-31 | 中国科学院物理研究所 | 一种在绝缘衬底上制备纳米结构的方法 |
US20100052995A1 (en) * | 2006-11-15 | 2010-03-04 | Board Of Trustees Of Michigan State University | Micropatterning of conductive graphite particles using microcontact printing |
US8049203B2 (en) | 2006-12-22 | 2011-11-01 | Qunano Ab | Nanoelectronic structure and method of producing such |
WO2008079078A1 (en) | 2006-12-22 | 2008-07-03 | Qunano Ab | Elevated led and method of producing such |
US8183587B2 (en) | 2006-12-22 | 2012-05-22 | Qunano Ab | LED with upstanding nanowire structure and method of producing such |
WO2008079076A1 (en) * | 2006-12-22 | 2008-07-03 | Qunano Ab | Led with upstanding nanowire structure and method of producing such |
US20080220175A1 (en) | 2007-01-22 | 2008-09-11 | Lorenzo Mangolini | Nanoparticles wtih grafted organic molecules |
US20090014030A1 (en) * | 2007-07-09 | 2009-01-15 | Asml Netherlands B.V. | Substrates and methods of using those substrates |
JP5681965B2 (ja) * | 2007-09-26 | 2015-03-11 | 瑞穂 森田 | 検出素子およびそれを用いた検出装置 |
CN101910050B (zh) * | 2007-10-26 | 2013-09-25 | 昆南诺股份有限公司 | 相异材料上的纳米线生长 |
US8215074B2 (en) | 2008-02-05 | 2012-07-10 | International Business Machines Corporation | Pattern formation employing self-assembled material |
US10991545B2 (en) | 2008-06-30 | 2021-04-27 | Nexgen Semi Holding, Inc. | Method and device for spatial charged particle bunching |
US10566169B1 (en) | 2008-06-30 | 2020-02-18 | Nexgen Semi Holding, Inc. | Method and device for spatial charged particle bunching |
JP2010182824A (ja) * | 2009-02-04 | 2010-08-19 | Toshiba Corp | 磁気ランダムアクセスメモリの製造方法及び混載メモリの製造方法 |
US8933526B2 (en) * | 2009-07-15 | 2015-01-13 | First Solar, Inc. | Nanostructured functional coatings and devices |
JP5599379B2 (ja) * | 2011-11-04 | 2014-10-01 | 信越化学工業株式会社 | 太陽電池素子の製造方法 |
GB201207463D0 (en) | 2012-04-30 | 2012-06-13 | Ibm | Methods and apparatuses for positioning nano-objects with aspect ratios |
KR101349976B1 (ko) * | 2012-07-13 | 2014-01-16 | 재단법인 멀티스케일 에너지시스템 연구단 | 나노입자로 조립된 3차원 구조물을 이용한 광학소자 |
FR2997420B1 (fr) | 2012-10-26 | 2017-02-24 | Commissariat Energie Atomique | Procede de croissance d'au moins un nanofil a partir d'une couche d'un metal de transition nitrure obtenue en deux etapes |
FR2997557B1 (fr) | 2012-10-26 | 2016-01-01 | Commissariat Energie Atomique | Dispositif electronique a nanofil(s) muni d'une couche tampon en metal de transition, procede de croissance d'au moins un nanofil, et procede de fabrication d'un dispositif |
CN103204458B (zh) * | 2013-03-14 | 2015-06-03 | 西安交通大学 | 一种基于紫外光固化驻极体的自组装方法 |
CN104445053A (zh) * | 2014-12-30 | 2015-03-25 | 西安建筑科技大学 | 柔性基底表面图形化组装纳米粒子的方法 |
EP3754051A1 (en) | 2019-06-19 | 2020-12-23 | Consejo Superior de Investigaciones Cientificas (CSIC) | Method for nanostructured materials fabrication combining soft lithographic imprint, aluminum anodization and metal sputtering |
EP4363642A1 (de) | 2021-06-28 | 2024-05-08 | Indorama Ventures Fibers Germany GmbH | Elektrisch leitfähiges garn |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3108894A (en) * | 1959-05-18 | 1963-10-29 | Burroughs Corp | Electrostatic charge production |
FR1347012A (fr) * | 1962-08-03 | 1963-12-27 | Sames Mach Electrostat | Nouveau procédé électrostatique d'émaillage humide à froid et appareil pour sa mise en oeuvre |
US3436468A (en) * | 1965-05-28 | 1969-04-01 | Texas Instruments Inc | Plastic bodies having regions of altered chemical structure and method of making same |
US3640746A (en) * | 1968-09-18 | 1972-02-08 | Xerox Corp | Adhesive contact electrification imaging |
US4124287A (en) * | 1977-03-31 | 1978-11-07 | Xerox Corporation | Imaging system utilizing uncharged marking particles |
US4169903A (en) | 1977-06-10 | 1979-10-02 | Ball Corporation | Electrostatic process for coating electrically conductive objects such as beverage cans |
US4296370A (en) * | 1979-10-11 | 1981-10-20 | Rca Corporation | Method of detecting a thin insulating film over a conductor |
GB2148608B (en) | 1983-10-22 | 1987-03-18 | Stc Plc | Forming conductive regions in polymeric materials |
JPS6141762A (ja) | 1984-08-06 | 1986-02-28 | Res Dev Corp Of Japan | 超微細パタ−ンの形成法 |
JPS6353254A (ja) | 1986-08-21 | 1988-03-07 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | 乾式付着方法 |
US5066512A (en) * | 1989-12-08 | 1991-11-19 | International Business Machines Corporation | Electrostatic deposition of lcd color filters |
ATE197746T1 (de) | 1990-05-31 | 2000-12-15 | Canon Kk | Verfahren zur verdrahtung eines halbleiterbauelementes |
US5047649A (en) * | 1990-10-09 | 1991-09-10 | International Business Machines Corporation | Method and apparatus for writing or etching narrow linewidth patterns on insulating materials |
GB9213054D0 (en) | 1992-06-19 | 1992-08-05 | Hitachi Europ Ltd | Atomic scale devices |
GB9213423D0 (en) | 1992-06-24 | 1992-08-05 | Hitachi Europ Ltd | Nanofabricated structures |
US5534309A (en) * | 1994-06-21 | 1996-07-09 | Msp Corporation | Method and apparatus for depositing particles on surfaces |
EP0865078A1 (en) | 1997-03-13 | 1998-09-16 | Hitachi Europe Limited | Method of depositing nanometre scale particles |
JP3441923B2 (ja) * | 1997-06-18 | 2003-09-02 | キヤノン株式会社 | カーボンナノチューブの製法 |
CN100335968C (zh) * | 2000-05-04 | 2007-09-05 | 英国技术集团国际有限公司 | 纳米结构 |
EP1297387A2 (en) * | 2000-06-30 | 2003-04-02 | President And Fellows of Harvard College | Electric microcontact printing method and apparatus |
-
2001
- 2001-05-04 CN CNB018090095A patent/CN100335968C/zh not_active Expired - Fee Related
- 2001-05-04 WO PCT/GB2001/001972 patent/WO2001084238A1/en active Application Filing
- 2001-05-04 US US10/258,866 patent/US7223444B2/en not_active Expired - Fee Related
- 2001-05-04 JP JP2001580599A patent/JP4222757B2/ja not_active Expired - Fee Related
- 2001-05-04 KR KR1020027014653A patent/KR100756211B1/ko not_active IP Right Cessation
- 2001-05-04 AU AU54933/01A patent/AU784574B2/en not_active Ceased
- 2001-05-04 CA CA2406006A patent/CA2406006C/en not_active Expired - Fee Related
- 2001-05-04 EP EP01928066.8A patent/EP1279068B1/en not_active Expired - Lifetime
-
2003
- 2003-10-22 HK HK03107640A patent/HK1055471A1/xx not_active IP Right Cessation
-
2007
- 2007-07-20 JP JP2007190137A patent/JP5085215B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP5085215B2 (ja) | 2012-11-28 |
EP1279068B1 (en) | 2014-07-09 |
CN1427962A (zh) | 2003-07-02 |
EP1279068A1 (en) | 2003-01-29 |
WO2001084238A1 (en) | 2001-11-08 |
KR100756211B1 (ko) | 2007-09-06 |
CA2406006C (en) | 2011-02-15 |
US20030102444A1 (en) | 2003-06-05 |
CA2406006A1 (en) | 2001-11-08 |
AU784574B2 (en) | 2006-05-04 |
JP4222757B2 (ja) | 2009-02-12 |
US7223444B2 (en) | 2007-05-29 |
KR20030053474A (ko) | 2003-06-28 |
JP2003531738A (ja) | 2003-10-28 |
JP2008006581A (ja) | 2008-01-17 |
CN100335968C (zh) | 2007-09-05 |
AU5493301A (en) | 2001-11-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20150504 |