HK1045215A1 - 先進的叩焊接合封裝 - Google Patents

先進的叩焊接合封裝

Info

Publication number
HK1045215A1
HK1045215A1 HK02106546.4A HK02106546A HK1045215A1 HK 1045215 A1 HK1045215 A1 HK 1045215A1 HK 02106546 A HK02106546 A HK 02106546A HK 1045215 A1 HK1045215 A1 HK 1045215A1
Authority
HK
Hong Kong
Prior art keywords
chip join
package
advanced flip
flip
advanced
Prior art date
Application number
HK02106546.4A
Other languages
English (en)
Inventor
Ishida Kenzo
Takahashi Kenji
Kubota Jiro
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of HK1045215A1 publication Critical patent/HK1045215A1/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0556Disposition
    • H01L2224/05571Disposition the external layer being disposed in a recess of the surface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/05573Single external layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01046Palladium [Pd]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01087Francium [Fr]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
HK02106546.4A 1999-10-26 2002-09-05 先進的叩焊接合封裝 HK1045215A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/427,230 US20020089836A1 (en) 1999-10-26 1999-10-26 Injection molded underfill package and method of assembly
PCT/US2000/026602 WO2001031699A1 (en) 1999-10-26 2000-09-27 Advanced flip-chip join package

Publications (1)

Publication Number Publication Date
HK1045215A1 true HK1045215A1 (zh) 2002-11-15

Family

ID=23694003

Family Applications (1)

Application Number Title Priority Date Filing Date
HK02106546.4A HK1045215A1 (zh) 1999-10-26 2002-09-05 先進的叩焊接合封裝

Country Status (8)

Country Link
US (1) US20020089836A1 (zh)
EP (1) EP1230676A1 (zh)
JP (1) JP2003513447A (zh)
KR (1) KR20020044577A (zh)
CN (1) CN1451178A (zh)
AU (1) AU7987400A (zh)
HK (1) HK1045215A1 (zh)
WO (1) WO2001031699A1 (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100398716B1 (ko) * 2000-06-12 2003-09-19 가부시키가이샤 히타치세이사쿠쇼 반도체 모듈 및 반도체 장치를 접속한 회로 기판
US7037805B2 (en) * 2003-05-07 2006-05-02 Honeywell International Inc. Methods and apparatus for attaching a die to a substrate
US7262077B2 (en) * 2003-09-30 2007-08-28 Intel Corporation Capillary underfill and mold encapsulation method and apparatus
JP2005347356A (ja) * 2004-05-31 2005-12-15 Sanyo Electric Co Ltd 回路装置の製造方法
US7148560B2 (en) * 2005-01-25 2006-12-12 Taiwan Semiconductor Manufacturing Co., Ltd. IC chip package structure and underfill process
US7491567B2 (en) * 2005-11-22 2009-02-17 Honeywell International Inc. MEMS device packaging methods
US20070114643A1 (en) * 2005-11-22 2007-05-24 Honeywell International Inc. Mems flip-chip packaging
US8247267B2 (en) 2008-03-11 2012-08-21 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer level IC assembly method
TWI458054B (zh) * 2009-01-21 2014-10-21 Sony Corp 半導體裝置及半導體裝置之製造方法
US8084853B2 (en) * 2009-09-25 2011-12-27 Mediatek Inc. Semiconductor flip chip package utilizing wire bonding for net switching
US8104666B1 (en) * 2010-09-01 2012-01-31 Taiwan Semiconductor Manufacturing Company, Ltd. Thermal compressive bonding with separate die-attach and reflow processes
US9252094B2 (en) * 2011-04-30 2016-02-02 Stats Chippac, Ltd. Semiconductor device and method of forming an interconnect structure with conductive material recessed within conductive ring over surface of conductive pillar
CN102263070A (zh) * 2011-06-13 2011-11-30 西安天胜电子有限公司 一种基于基板封装的wlcsp封装件
US11152274B2 (en) 2017-09-11 2021-10-19 Advanced Semiconductor Engineering, Inc. Multi-moldings fan-out package and process

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3422446B2 (ja) * 1995-03-07 2003-06-30 日東電工株式会社 半導体装置の製法
DE19628702A1 (de) * 1995-07-25 1997-01-30 Fraunhofer Ges Forschung Flußmittelfreie Kontaktierung von Bauelementen
US5817545A (en) * 1996-01-24 1998-10-06 Cornell Research Foundation, Inc. Pressurized underfill encapsulation of integrated circuits
US5757071A (en) * 1996-06-24 1998-05-26 Intel Corporation C4 substrate contact pad which has a layer of Ni-B plating
JP3017485B2 (ja) * 1998-01-23 2000-03-06 アピックヤマダ株式会社 半導体装置の樹脂封止方法及び樹脂封止装置
DE69934153T2 (de) * 1998-02-02 2007-09-20 Shin-Etsu Chemical Co., Ltd. Verfahren zur Montage von Flip-Chip-Halbleiterbauelementen

Also Published As

Publication number Publication date
KR20020044577A (ko) 2002-06-15
CN1451178A (zh) 2003-10-22
AU7987400A (en) 2001-05-08
EP1230676A1 (en) 2002-08-14
JP2003513447A (ja) 2003-04-08
WO2001031699A1 (en) 2001-05-03
US20020089836A1 (en) 2002-07-11

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