HK1039999A1 - 有鎖緊層的大型磁阻傳感器 - Google Patents
有鎖緊層的大型磁阻傳感器Info
- Publication number
- HK1039999A1 HK1039999A1 HK02101462.5A HK02101462A HK1039999A1 HK 1039999 A1 HK1039999 A1 HK 1039999A1 HK 02101462 A HK02101462 A HK 02101462A HK 1039999 A1 HK1039999 A1 HK 1039999A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- magnetoresistive sensor
- pinning layer
- giant magnetoresistive
- giant
- pinning
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3295—Spin-exchange coupled multilayers wherein the magnetic pinned or free layers are laminated without anti-parallel coupling within the pinned and free layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
- G11B5/3932—Magnetic biasing films
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Hall/Mr Elements (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
- Measuring Magnetic Variables (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13156799P | 1999-04-28 | 1999-04-28 | |
PCT/US1999/020004 WO2000065578A1 (en) | 1999-04-28 | 1999-09-01 | Giant magnetoresistive sensor with pinning layer |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1039999A1 true HK1039999A1 (zh) | 2002-05-17 |
Family
ID=22450022
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK02101462.5A HK1039999A1 (zh) | 1999-04-28 | 2002-02-26 | 有鎖緊層的大型磁阻傳感器 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6433972B1 (zh) |
JP (2) | JP2003520378A (zh) |
KR (1) | KR20020021089A (zh) |
DE (1) | DE19983947T1 (zh) |
GB (1) | GB2363671B (zh) |
HK (1) | HK1039999A1 (zh) |
WO (1) | WO2000065578A1 (zh) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6738236B1 (en) * | 1998-05-07 | 2004-05-18 | Seagate Technology Llc | Spin valve/GMR sensor using synthetic antiferromagnetic layer pinned by Mn-alloy having a high blocking temperature |
GB2363470B (en) * | 1999-04-20 | 2003-09-10 | Seagate Technology Llc | Giant magnetoresistive sensor with a CrMnPt pinning layer and a NiFeCr seed layer |
US6650512B1 (en) * | 2000-03-21 | 2003-11-18 | International Business Machines Corporation | GMR coefficient enhancement of a spin valve structure |
US6790541B2 (en) | 2000-04-12 | 2004-09-14 | Alps Electric Co., Ltd. | Exchange coupling film and electroresistive sensor using the same |
JP3694440B2 (ja) * | 2000-04-12 | 2005-09-14 | アルプス電気株式会社 | 交換結合膜の製造方法、及び前記交換結合膜を用いた磁気抵抗効果素子の製造方法、ならびに前記磁気抵抗効果素子を用いた薄膜磁気ヘッドの製造方法 |
JP3670928B2 (ja) | 2000-04-12 | 2005-07-13 | アルプス電気株式会社 | 交換結合膜と、この交換結合膜を用いた磁気抵抗効果素子、ならびに前記磁気抵抗効果素子を用いた薄膜磁気ヘッド |
JP3686572B2 (ja) | 2000-04-12 | 2005-08-24 | アルプス電気株式会社 | 交換結合膜の製造方法と、前記交換結合膜を用いた磁気抵抗効果素子の製造方法、ならびに前記磁気抵抗効果素子を用いた薄膜磁気ヘッドの製造方法 |
US6521098B1 (en) | 2000-08-31 | 2003-02-18 | International Business Machines Corporation | Fabrication method for spin valve sensor with insulating and conducting seed layers |
JP2002299729A (ja) * | 2001-03-30 | 2002-10-11 | Fujitsu Ltd | 磁気抵抗効果読み取り素子の製造方法 |
US6954342B2 (en) * | 2001-04-30 | 2005-10-11 | Hitachi Global Storage Technologies Netherlands B.V. | Underlayer for high amplitude spin valve sensors |
US6898112B2 (en) * | 2002-12-18 | 2005-05-24 | Freescale Semiconductor, Inc. | Synthetic antiferromagnetic structure for magnetoelectronic devices |
US7092220B2 (en) * | 2003-07-29 | 2006-08-15 | Hitachi Global Storage Technologies | Apparatus for enhancing thermal stability, improving biasing and reducing damage from electrostatic discharge in self-pinned abutted junction heads having a first self-pinned layer extending under the hard bias layers |
US7099123B2 (en) * | 2003-07-29 | 2006-08-29 | Hitachi Global Storage Technologies | Self-pinned abutted junction heads having an arrangement of a second hard bias layer and a free layer for providing a net net longitudinal bias on the free layer |
US7072154B2 (en) | 2003-07-29 | 2006-07-04 | Hitachi Global Storage Technologies Netherlands B.V. | Method and apparatus for providing a self-pinned bias layer that extends beyond the ends of the free layer |
US7050277B2 (en) * | 2003-07-29 | 2006-05-23 | Hitachi Global Storage Technologies Netherlands B.V. | Apparatus having a self-pinned abutted junction magnetic read sensor with hard bias layers formed over ends of a self-pinned layer and extending under a hard bias layer |
JP2006128410A (ja) * | 2004-10-28 | 2006-05-18 | Alps Electric Co Ltd | 磁気検出素子及びその製造方法 |
US7367109B2 (en) | 2005-01-31 | 2008-05-06 | Hitachi Global Storage Technologies Netherlands B.V. | Method of fabricating magnetic sensors with pinned layers with zero net magnetic moment |
US7554775B2 (en) | 2005-02-28 | 2009-06-30 | Hitachi Global Storage Technologies Netherlands B.V. | GMR sensors with strongly pinning and pinned layers |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG46731A1 (en) * | 1995-06-30 | 1998-02-20 | Ibm | Spin valve magnetoresistive sensor with antiparallel pinned layer and improved exchange bias layer and magnetic recording system using the senor |
JP2849354B2 (ja) | 1995-07-28 | 1999-01-20 | ティーディーケイ株式会社 | 磁気変換素子及び薄膜磁気ヘッド |
JP3181525B2 (ja) * | 1996-12-13 | 2001-07-03 | アルプス電気株式会社 | スピンバルブ型薄膜素子及び前記スピンバルブ型薄膜素子を用いた薄膜磁気ヘッド |
JP3181512B2 (ja) * | 1996-09-12 | 2001-07-03 | アルプス電気株式会社 | デュアルスピンバルブ型素子および薄膜磁気ヘッド |
US5731936A (en) * | 1996-09-26 | 1998-03-24 | International Business Machines Corporation | Magnetoresistive (MR) sensor with coefficient enhancing that promotes thermal stability |
JPH10154311A (ja) * | 1996-11-21 | 1998-06-09 | Nec Corp | 磁気抵抗効果素子およびシールド型磁気抵抗効果センサ |
JP3255872B2 (ja) * | 1997-04-17 | 2002-02-12 | アルプス電気株式会社 | スピンバルブ型薄膜素子及びその製造方法 |
JP3225496B2 (ja) * | 1997-06-05 | 2001-11-05 | ティーディーケイ株式会社 | 磁気抵抗効果膜および磁気抵抗効果型ヘッド |
JPH1186235A (ja) * | 1997-09-04 | 1999-03-30 | Hitachi Ltd | 磁気記録再生装置 |
JPH1186237A (ja) * | 1997-09-08 | 1999-03-30 | Toshiba Corp | 磁気抵抗効果ヘッドおよび磁気記憶装置 |
JP3227116B2 (ja) * | 1997-09-24 | 2001-11-12 | アルプス電気株式会社 | スピンバルブ型薄膜素子およびその製造方法 |
JPH11112052A (ja) * | 1997-09-30 | 1999-04-23 | Hitachi Ltd | 磁気抵抗センサ及びこれを用いた磁気記録再生装置 |
JP3833362B2 (ja) * | 1997-10-01 | 2006-10-11 | 富士通株式会社 | 磁気抵抗効果型ヘッド |
JP3263016B2 (ja) * | 1997-10-20 | 2002-03-04 | アルプス電気株式会社 | スピンバルブ型薄膜素子 |
GB9800109D0 (en) * | 1998-01-06 | 1998-03-04 | Ncr Int Inc | Device for detecting the acceptability of a data-bearing card |
JP3982596B2 (ja) * | 1998-03-20 | 2007-09-26 | ローム株式会社 | 電子部品用基板のベルト又はチエン式搬送装置 |
US6258468B1 (en) * | 1998-12-22 | 2001-07-10 | Read-Rite Corporation | AMR read sensor structure and method with high magnetoresistive coefficient |
US6222707B1 (en) * | 1998-12-28 | 2001-04-24 | Read-Rite Corporation | Bottom or dual spin valve having a seed layer that results in an improved antiferromagnetic layer |
GB2363470B (en) * | 1999-04-20 | 2003-09-10 | Seagate Technology Llc | Giant magnetoresistive sensor with a CrMnPt pinning layer and a NiFeCr seed layer |
US6278592B1 (en) * | 1999-08-17 | 2001-08-21 | Seagate Technology Llc | GMR spin valve having a bilayer TaN/NiFeCr seedlayer to improve GMR response and exchange pinning field |
-
1999
- 1999-09-01 US US09/380,435 patent/US6433972B1/en not_active Expired - Fee Related
- 1999-09-01 DE DE19983947T patent/DE19983947T1/de not_active Withdrawn
- 1999-09-01 KR KR1020017013560A patent/KR20020021089A/ko not_active Application Discontinuation
- 1999-09-01 WO PCT/US1999/020004 patent/WO2000065578A1/en not_active Application Discontinuation
- 1999-09-01 GB GB0124153A patent/GB2363671B/en not_active Expired - Fee Related
- 1999-09-01 JP JP2000614443A patent/JP2003520378A/ja active Pending
-
2002
- 2002-02-26 HK HK02101462.5A patent/HK1039999A1/zh unknown
-
2009
- 2009-08-24 JP JP2009193352A patent/JP2009283126A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JP2003520378A (ja) | 2003-07-02 |
DE19983947T1 (de) | 2002-03-28 |
JP2009283126A (ja) | 2009-12-03 |
GB0124153D0 (en) | 2001-11-28 |
GB2363671B (en) | 2003-12-24 |
GB2363671A (en) | 2002-01-02 |
US6433972B1 (en) | 2002-08-13 |
WO2000065578A1 (en) | 2000-11-02 |
KR20020021089A (ko) | 2002-03-18 |
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