HK1037778A1 - Dual threshold voltage sram cell with bit line leakage control - Google Patents
Dual threshold voltage sram cell with bit line leakage controlInfo
- Publication number
- HK1037778A1 HK1037778A1 HK01108612A HK01108612A HK1037778A1 HK 1037778 A1 HK1037778 A1 HK 1037778A1 HK 01108612 A HK01108612 A HK 01108612A HK 01108612 A HK01108612 A HK 01108612A HK 1037778 A1 HK1037778 A1 HK 1037778A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- bit line
- threshold voltage
- sram cell
- leakage control
- line leakage
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/418—Address circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/261,915 US6181608B1 (en) | 1999-03-03 | 1999-03-03 | Dual Vt SRAM cell with bitline leakage control |
PCT/US2000/004239 WO2000052702A1 (en) | 1999-03-03 | 2000-02-17 | Dual threshold voltage sram cell with bit line leakage control |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1037778A1 true HK1037778A1 (en) | 2002-02-15 |
Family
ID=22995437
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK01108612A HK1037778A1 (en) | 1999-03-03 | 2001-12-07 | Dual threshold voltage sram cell with bit line leakage control |
Country Status (11)
Country | Link |
---|---|
US (1) | US6181608B1 (xx) |
EP (1) | EP1155413B1 (xx) |
JP (1) | JP2002538615A (xx) |
KR (1) | KR100479670B1 (xx) |
CN (1) | CN1253897C (xx) |
AU (1) | AU3001700A (xx) |
BR (1) | BR0008704A (xx) |
DE (1) | DE60029757T2 (xx) |
HK (1) | HK1037778A1 (xx) |
TW (1) | TW463169B (xx) |
WO (1) | WO2000052702A1 (xx) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002056681A (ja) * | 2000-08-09 | 2002-02-22 | Toshiba Corp | メモリ装置 |
US6519176B1 (en) * | 2000-09-29 | 2003-02-11 | Intel Corporation | Dual threshold SRAM cell for single-ended sensing |
TWI242085B (en) * | 2001-03-29 | 2005-10-21 | Sanyo Electric Co | Display device |
US6946901B2 (en) * | 2001-05-22 | 2005-09-20 | The Regents Of The University Of California | Low-power high-performance integrated circuit and related methods |
US6628557B2 (en) | 2001-09-28 | 2003-09-30 | Intel Corporation | Leakage-tolerant memory arrangements |
CA2479682A1 (en) * | 2002-03-27 | 2003-10-09 | The Regents Of The University Of California | Low-power high-performance memory cell and related methods |
US6683804B1 (en) * | 2002-07-16 | 2004-01-27 | Analog Devices, Inc. | Read/write memory arrays and methods with predetermined and retrievable latent-state patterns |
DE10255102B3 (de) * | 2002-11-26 | 2004-04-29 | Infineon Technologies Ag | SRAM-Speicherzelle mit Mitteln zur Erzielung eines vom Speicherzustand unabhängigen Leckstroms |
US6724649B1 (en) * | 2002-12-19 | 2004-04-20 | Intel Corporation | Memory cell leakage reduction |
US7200050B2 (en) * | 2003-05-26 | 2007-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Memory unit and semiconductor device |
CN1816882A (zh) * | 2003-07-01 | 2006-08-09 | 兹莫斯技术有限公司 | 静态存储器单元结构和电路 |
US6920061B2 (en) * | 2003-08-27 | 2005-07-19 | International Business Machines Corporation | Loadless NMOS four transistor dynamic dual Vt SRAM cell |
JP2005142289A (ja) * | 2003-11-05 | 2005-06-02 | Toshiba Corp | 半導体記憶装置 |
US7123500B2 (en) * | 2003-12-30 | 2006-10-17 | Intel Corporation | 1P1N 2T gain cell |
JP4342350B2 (ja) * | 2004-03-11 | 2009-10-14 | 株式会社東芝 | 半導体メモリ装置 |
US7061794B1 (en) * | 2004-03-30 | 2006-06-13 | Virage Logic Corp. | Wordline-based source-biasing scheme for reducing memory cell leakage |
US7469465B2 (en) * | 2004-06-30 | 2008-12-30 | Hitachi Global Storage Technologies Netherlands B.V. | Method of providing a low-stress sensor configuration for a lithography-defined read sensor |
US7079426B2 (en) * | 2004-09-27 | 2006-07-18 | Intel Corporation | Dynamic multi-Vcc scheme for SRAM cell stability control |
US7110278B2 (en) * | 2004-09-29 | 2006-09-19 | Intel Corporation | Crosspoint memory array utilizing one time programmable antifuse cells |
US7321502B2 (en) * | 2004-09-30 | 2008-01-22 | Intel Corporation | Non volatile data storage through dielectric breakdown |
US7321504B2 (en) * | 2005-04-21 | 2008-01-22 | Micron Technology, Inc | Static random access memory cell |
KR100699857B1 (ko) * | 2005-07-30 | 2007-03-27 | 삼성전자주식회사 | 무부하 에스램, 그 동작 방법 및 그 제조 방법 |
US7230842B2 (en) * | 2005-09-13 | 2007-06-12 | Intel Corporation | Memory cell having p-type pass device |
JP2007122814A (ja) * | 2005-10-28 | 2007-05-17 | Oki Electric Ind Co Ltd | 半導体集積回路及びリーク電流低減方法 |
US20070153610A1 (en) * | 2005-12-29 | 2007-07-05 | Intel Corporation | Dynamic body bias with bias boost |
US8006164B2 (en) | 2006-09-29 | 2011-08-23 | Intel Corporation | Memory cell supply voltage control based on error detection |
US7558097B2 (en) * | 2006-12-28 | 2009-07-07 | Intel Corporation | Memory having bit line with resistor(s) between memory cells |
US8009461B2 (en) * | 2008-01-07 | 2011-08-30 | International Business Machines Corporation | SRAM device, and SRAM device design structure, with adaptable access transistors |
JP2009295229A (ja) * | 2008-06-05 | 2009-12-17 | Toshiba Corp | 半導体記憶装置 |
US20110149667A1 (en) * | 2009-12-23 | 2011-06-23 | Fatih Hamzaoglu | Reduced area memory array by using sense amplifier as write driver |
US9858986B2 (en) * | 2010-08-02 | 2018-01-02 | Texas Instruments Incorporated | Integrated circuit with low power SRAM |
US9111638B2 (en) * | 2012-07-13 | 2015-08-18 | Freescale Semiconductor, Inc. | SRAM bit cell with reduced bit line pre-charge voltage |
US9070477B1 (en) | 2012-12-12 | 2015-06-30 | Mie Fujitsu Semiconductor Limited | Bit interleaved low voltage static random access memory (SRAM) and related methods |
US9529726B2 (en) | 2013-07-15 | 2016-12-27 | Everspin Technologies, Inc. | Memory device with page emulation mode |
CN109859791B (zh) * | 2019-01-31 | 2020-08-28 | 西安微电子技术研究所 | 一种全隔离结构9管sram存储单元及其读写操作方法 |
CN110277120B (zh) * | 2019-06-27 | 2021-05-14 | 电子科技大学 | 一种在低压下提升读写稳定性的单端8管sram存储单元电路 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5153852A (en) * | 1988-07-01 | 1992-10-06 | Vitesse Semiconductor Corporation | Static RAM cell with high speed and improved cell stability |
JPH0340294A (ja) | 1989-07-05 | 1991-02-21 | Mitsubishi Electric Corp | スタティック型半導体記憶装置 |
JP3076351B2 (ja) * | 1990-04-09 | 2000-08-14 | 株式会社リコー | バッテリバックアップ付半導体記憶装置 |
US5222039A (en) * | 1990-11-28 | 1993-06-22 | Thunderbird Technologies, Inc. | Static random access memory (SRAM) including Fermi-threshold field effect transistors |
US5732015A (en) * | 1991-04-23 | 1998-03-24 | Waferscale Integration, Inc. | SRAM with a programmable reference voltage |
US5461713A (en) * | 1991-05-10 | 1995-10-24 | Sgs-Thomson Microelectronics S.R.L. | Current offset sense amplifier of a modulated current or current unbalance type for programmable memories |
US5452246A (en) | 1993-06-02 | 1995-09-19 | Fujitsu Limited | Static semiconductor memory device adapted for stabilization of low-voltage operation and reduction in cell size |
US5393689A (en) * | 1994-02-28 | 1995-02-28 | Motorola, Inc. | Process for forming a static-random-access memory cell |
US5471421A (en) | 1994-12-16 | 1995-11-28 | Sun Microsystems, Inc. | Storage cell using low powered/low threshold CMOS pass transistors having reduced charge leakage |
DE69615421T2 (de) * | 1995-01-12 | 2002-06-06 | Intergraph Corp., Huntsville | Registerspeicher mit Umleitungsmöglichkeit |
JP4198201B2 (ja) * | 1995-06-02 | 2008-12-17 | 株式会社ルネサステクノロジ | 半導体装置 |
US5703392A (en) * | 1995-06-02 | 1997-12-30 | Utron Technology Inc | Minimum size integrated circuit static memory cell |
KR0182960B1 (ko) * | 1995-08-31 | 1999-04-15 | 김광호 | 반도체 메모리의 칩 면적을 줄일수 있는 비트라인 로드회로 |
JPH09270494A (ja) * | 1996-01-31 | 1997-10-14 | Hitachi Ltd | 半導体集積回路装置 |
US5790452A (en) * | 1996-05-02 | 1998-08-04 | Integrated Device Technology, Inc. | Memory cell having asymmetrical source/drain pass transistors and method for operating same |
US5828597A (en) * | 1997-04-02 | 1998-10-27 | Texas Instruments Incorporated | Low voltage, low power static random access memory cell |
US5939762A (en) | 1997-06-26 | 1999-08-17 | Integrated Device Technology, Inc. | SRAM cell using thin gate oxide pulldown transistors |
-
1999
- 1999-03-03 US US09/261,915 patent/US6181608B1/en not_active Expired - Lifetime
-
2000
- 2000-02-17 CN CNB008071195A patent/CN1253897C/zh not_active Expired - Fee Related
- 2000-02-17 EP EP00908724A patent/EP1155413B1/en not_active Expired - Lifetime
- 2000-02-17 AU AU30017/00A patent/AU3001700A/en not_active Abandoned
- 2000-02-17 KR KR10-2001-7011169A patent/KR100479670B1/ko not_active IP Right Cessation
- 2000-02-17 WO PCT/US2000/004239 patent/WO2000052702A1/en active IP Right Grant
- 2000-02-17 BR BR0008704-1A patent/BR0008704A/pt not_active IP Right Cessation
- 2000-02-17 JP JP2000603043A patent/JP2002538615A/ja active Pending
- 2000-02-17 DE DE60029757T patent/DE60029757T2/de not_active Expired - Lifetime
- 2000-03-10 TW TW089103802A patent/TW463169B/zh not_active IP Right Cessation
-
2001
- 2001-12-07 HK HK01108612A patent/HK1037778A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE60029757D1 (en) | 2006-09-14 |
JP2002538615A (ja) | 2002-11-12 |
AU3001700A (en) | 2000-09-21 |
WO2000052702A1 (en) | 2000-09-08 |
TW463169B (en) | 2001-11-11 |
US6181608B1 (en) | 2001-01-30 |
EP1155413B1 (en) | 2006-08-02 |
BR0008704A (pt) | 2001-12-26 |
KR100479670B1 (ko) | 2005-03-30 |
EP1155413A1 (en) | 2001-11-21 |
CN1357145A (zh) | 2002-07-03 |
CN1253897C (zh) | 2006-04-26 |
DE60029757T2 (de) | 2007-10-31 |
KR20010102476A (ko) | 2001-11-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20180217 |