HK1018921A1 - Electrical device comprising a voltage dependant capacitance and method of manufacturing the same - Google Patents

Electrical device comprising a voltage dependant capacitance and method of manufacturing the same

Info

Publication number
HK1018921A1
HK1018921A1 HK99104031.5A HK99104031A HK1018921A1 HK 1018921 A1 HK1018921 A1 HK 1018921A1 HK 99104031 A HK99104031 A HK 99104031A HK 1018921 A1 HK1018921 A1 HK 1018921A1
Authority
HK
Hong Kong
Prior art keywords
manufacturing
same
electrical device
voltage dependant
capacitance
Prior art date
Application number
HK99104031.5A
Other languages
English (en)
Inventor
Andrej Litwin
Sven Erik Mattisson
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Publication of HK1018921A1 publication Critical patent/HK1018921A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/93—Variable capacitance diodes, e.g. varactors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
HK99104031.5A 1997-09-11 1999-09-17 Electrical device comprising a voltage dependant capacitance and method of manufacturing the same HK1018921A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP19970850130 EP0902483B1 (fr) 1997-09-11 1997-09-11 Dispositif électrique comprenant une capacité de la tension et procédé de fabrication

Publications (1)

Publication Number Publication Date
HK1018921A1 true HK1018921A1 (en) 2000-01-07

Family

ID=8230964

Family Applications (1)

Application Number Title Priority Date Filing Date
HK99104031.5A HK1018921A1 (en) 1997-09-11 1999-09-17 Electrical device comprising a voltage dependant capacitance and method of manufacturing the same

Country Status (4)

Country Link
EP (2) EP1981087B1 (fr)
DE (1) DE69739102D1 (fr)
ES (2) ES2317648T3 (fr)
HK (1) HK1018921A1 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10021867A1 (de) 2000-05-05 2001-11-15 Infineon Technologies Ag Spannungsgesteuerte Kapazität
DE10126328A1 (de) * 2001-05-30 2002-12-12 Infineon Technologies Ag Integrierte, abstimmbare Kapazität
DE10139396A1 (de) * 2001-08-10 2003-01-16 Infineon Technologies Ag Integrierte Halbleiterschaltung mit einem Varaktor
SE520590C2 (sv) * 2001-11-15 2003-07-29 Ericsson Telefon Ab L M Halvledarprocess och PMOS-varaktor
US6828654B2 (en) 2001-12-27 2004-12-07 Broadcom Corporation Thick oxide P-gate NMOS capacitor for use in a phase-locked loop circuit and method of making same
DE10209517A1 (de) 2002-03-04 2003-06-26 Infineon Technologies Ag Abstimmbares, kapazitives Bauteil und LC-Oszillator mit dem Bauteil
US7714412B2 (en) 2004-08-27 2010-05-11 International Business Machines Corporation MOS varactor using isolation well
US20080185625A1 (en) * 2004-09-10 2008-08-07 University Of Florida Research Foundation, Inc. Source/Drain to Gate Capacitive Switches and Wide Tuning Range Varactors
US8346188B2 (en) * 2008-09-22 2013-01-01 Texas Instruments Incorporated Nonlinearity calibration scheme for a frequency modulation transmitter
KR101246348B1 (ko) 2009-03-27 2013-03-25 고려대학교 산학협력단 모스 버랙터 제조방법
EP2916355B1 (fr) * 2014-03-07 2023-05-10 Nxp B.V. Structure de diode varicap
EP4128537A1 (fr) 2020-03-31 2023-02-08 Telefonaktiebolaget LM ERICSSON (PUBL) Boucle à verrouillage de phase

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59154077A (ja) * 1983-02-23 1984-09-03 Clarion Co Ltd 可変容量素子
JPS61292358A (ja) * 1985-06-19 1986-12-23 Fujitsu Ltd Ｍｉｓ型電界効果トランジスタの製造方法
US5107227A (en) * 1988-02-08 1992-04-21 Magellan Corporation (Australia) Pty. Ltd. Integratable phase-locked loop
US5045966A (en) * 1990-09-17 1991-09-03 Micrel Semiconductor Method for forming capacitor using FET process and structure formed by same
JP2951128B2 (ja) * 1992-10-20 1999-09-20 三洋電機株式会社 電圧制御型発振回路

Also Published As

Publication number Publication date
ES2400000T3 (es) 2013-04-04
EP1981087A2 (fr) 2008-10-15
EP0902483A1 (fr) 1999-03-17
EP1981087A3 (fr) 2008-11-05
ES2317648T3 (es) 2009-04-16
EP1981087B1 (fr) 2012-11-21
EP0902483B1 (fr) 2008-11-12
DE69739102D1 (de) 2008-12-24

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Legal Events

Date Code Title Description
PE Patent expired

Effective date: 20170910