HK1018121A1 - Emitter ballast bypass for radio frequency power transistors - Google Patents

Emitter ballast bypass for radio frequency power transistors

Info

Publication number
HK1018121A1
HK1018121A1 HK98111605A HK98111605A HK1018121A1 HK 1018121 A1 HK1018121 A1 HK 1018121A1 HK 98111605 A HK98111605 A HK 98111605A HK 98111605 A HK98111605 A HK 98111605A HK 1018121 A1 HK1018121 A1 HK 1018121A1
Authority
HK
Hong Kong
Prior art keywords
radio frequency
frequency power
power transistors
emitter ballast
ballast bypass
Prior art date
Application number
HK98111605A
Other languages
English (en)
Inventor
Ted Johansson
Larry Leighton
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Publication of HK1018121A1 publication Critical patent/HK1018121A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7302—Bipolar junction transistors structurally associated with other devices
    • H01L29/7304—Bipolar junction transistors structurally associated with other devices the device being a resistive element, e.g. ballasting resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0658—Vertical bipolar transistor in combination with resistors or capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
HK98111605A 1995-02-24 1998-10-29 Emitter ballast bypass for radio frequency power transistors HK1018121A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/393,683 US5684326A (en) 1995-02-24 1995-02-24 Emitter ballast bypass for radio frequency power transistors
PCT/SE1996/000213 WO1996026548A1 (en) 1995-02-24 1996-02-16 Emitter ballast bypass for radio frequency power transistors

Publications (1)

Publication Number Publication Date
HK1018121A1 true HK1018121A1 (en) 1999-12-10

Family

ID=23555800

Family Applications (1)

Application Number Title Priority Date Filing Date
HK98111605A HK1018121A1 (en) 1995-02-24 1998-10-29 Emitter ballast bypass for radio frequency power transistors

Country Status (11)

Country Link
US (1) US5684326A (sv)
EP (1) EP0811249B1 (sv)
JP (1) JPH11500868A (sv)
KR (1) KR100359978B1 (sv)
CN (1) CN1077333C (sv)
AU (1) AU4852596A (sv)
CA (1) CA2213611A1 (sv)
DE (1) DE69623265T2 (sv)
FI (1) FI973463A (sv)
HK (1) HK1018121A1 (sv)
WO (1) WO1996026548A1 (sv)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5939739A (en) * 1996-05-31 1999-08-17 The Whitaker Corporation Separation of thermal and electrical paths in flip chip ballasted power heterojunction bipolar transistors
AU4652097A (en) * 1996-09-27 1998-04-17 Whitaker Corporation, The Integrated emitter drain bypass capacitor for microwave/rf power device applications
US5821602A (en) * 1996-11-25 1998-10-13 Spectrian, Inc. RF power transistor having improved stability and gain
US5841184A (en) * 1997-09-19 1998-11-24 The Whitaker Corporation Integrated emitter drain bypass capacitor for microwave/RF power device applications
SE515836C3 (sv) * 1999-05-17 2001-11-06 Ericsson Telefon Ab L M Förfarande för tillverkning av en bipolär högfrekvent kiseltransistor samt effekttransistoranordning
US6483188B1 (en) * 2000-05-15 2002-11-19 Atheros Communications, Inc. Rf integrated circuit layout
JP4949650B2 (ja) * 2005-07-13 2012-06-13 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
DE102006013078B4 (de) * 2006-03-22 2008-01-03 Semikron Elektronik Gmbh & Co. Kg Kompaktes Leistungshalbleitermodul mit Verbindungseinrichtung
US8330265B2 (en) * 2007-06-22 2012-12-11 Cree, Inc. RF transistor packages with internal stability network and methods of forming RF transistor packages with internal stability networks
CN101567363B (zh) * 2009-06-11 2011-12-07 中国电子科技集团公司第十三研究所 双极结型晶体管发射极的镇流电阻

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3918080A (en) * 1968-06-21 1975-11-04 Philips Corp Multiemitter transistor with continuous ballast resistor
JPS55140251A (en) * 1979-04-12 1980-11-01 Fujitsu Ltd Semiconductor device
JPS5939949U (ja) * 1982-09-08 1984-03-14 アルプス電気株式会社 高周波回路装置
IT1221867B (it) * 1983-05-16 1990-07-12 Ates Componenti Elettron Struttura di transistore bipolare di potenza con resistenza di bilanciamento di base incroporata by-passable
NL8403111A (nl) * 1984-10-12 1986-05-01 Philips Nv Werkwijze ter vervaardiging van een bipolaire transistor met emitterserieweerstanden, en transistor vervaardigd volgens de werkwijze.
US4864379A (en) * 1988-05-20 1989-09-05 General Electric Company Bipolar transistor with field shields
JP3039930B2 (ja) * 1988-06-24 2000-05-08 株式会社日立製作所 Ｍｉｓ容量の接続方法
US5352911A (en) * 1991-10-28 1994-10-04 Trw Inc. Dual base HBT
IT1252102B (it) * 1991-11-26 1995-06-02 Cons Ric Microelettronica Dispositivo monolitico a semiconduttore a struttura verticale con transistore di potenza a base profonda e emettitore a dita avente resistenze di ballast
JP2762851B2 (ja) * 1992-07-27 1998-06-04 日本電気株式会社 半導体装置の製造方法
US5378922A (en) * 1992-09-30 1995-01-03 Rockwell International Corporation HBT with semiconductor ballasting
US5321279A (en) * 1992-11-09 1994-06-14 Texas Instruments Incorporated Base ballasting

Also Published As

Publication number Publication date
EP0811249A1 (en) 1997-12-10
AU4852596A (en) 1996-09-11
EP0811249B1 (en) 2002-08-28
US5684326A (en) 1997-11-04
JPH11500868A (ja) 1999-01-19
CN1181843A (zh) 1998-05-13
CN1077333C (zh) 2002-01-02
FI973463A0 (sv) 1997-08-22
FI973463A (sv) 1997-10-23
KR19980702471A (ko) 1998-07-15
DE69623265D1 (de) 2002-10-02
KR100359978B1 (ko) 2003-05-16
WO1996026548A1 (en) 1996-08-29
CA2213611A1 (en) 1996-08-29
DE69623265T2 (de) 2003-11-27

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Legal Events

Date Code Title Description
PF Patent in force
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20060216