GB9619141D0 - Radio frequency plasma generator - Google Patents

Radio frequency plasma generator

Info

Publication number
GB9619141D0
GB9619141D0 GBGB9619141.6A GB9619141A GB9619141D0 GB 9619141 D0 GB9619141 D0 GB 9619141D0 GB 9619141 A GB9619141 A GB 9619141A GB 9619141 D0 GB9619141 D0 GB 9619141D0
Authority
GB
United Kingdom
Prior art keywords
radio frequency
plasma generator
frequency plasma
generator
radio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GBGB9619141.6A
Other versions
GB2317265A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricardo AEA Ltd
Original Assignee
AEA Technology PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AEA Technology PLC filed Critical AEA Technology PLC
Priority to GB9619141A priority Critical patent/GB2317265A/en
Publication of GB9619141D0 publication Critical patent/GB9619141D0/en
Priority to AU38573/97A priority patent/AU3857397A/en
Priority to PCT/GB1997/002144 priority patent/WO1998011764A1/en
Publication of GB2317265A publication Critical patent/GB2317265A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
GB9619141A 1996-09-13 1996-09-13 Radio frequency plasma generator Withdrawn GB2317265A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB9619141A GB2317265A (en) 1996-09-13 1996-09-13 Radio frequency plasma generator
AU38573/97A AU3857397A (en) 1996-09-13 1997-08-08 Radio frequency plasma generator
PCT/GB1997/002144 WO1998011764A1 (en) 1996-09-13 1997-08-08 Radio frequency plasma generator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9619141A GB2317265A (en) 1996-09-13 1996-09-13 Radio frequency plasma generator

Publications (2)

Publication Number Publication Date
GB9619141D0 true GB9619141D0 (en) 1996-10-23
GB2317265A GB2317265A (en) 1998-03-18

Family

ID=10799881

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9619141A Withdrawn GB2317265A (en) 1996-09-13 1996-09-13 Radio frequency plasma generator

Country Status (3)

Country Link
AU (1) AU3857397A (en)
GB (1) GB2317265A (en)
WO (1) WO1998011764A1 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103170447B (en) 2005-08-30 2015-02-18 先进科技材料公司 Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation
US7605595B2 (en) 2006-09-29 2009-10-20 General Electric Company System for clearance measurement and method of operating the same
US7454974B2 (en) 2006-09-29 2008-11-25 General Electric Company Probe system, ultrasound system and method of generating ultrasound
EP2068304A1 (en) * 2007-12-05 2009-06-10 General Electric Company Probe system, ultrasound system and method of generating ultrasound
US20110021011A1 (en) 2009-07-23 2011-01-27 Advanced Technology Materials, Inc. Carbon materials for carbon implantation
US8062965B2 (en) 2009-10-27 2011-11-22 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8138071B2 (en) 2009-10-27 2012-03-20 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8598022B2 (en) 2009-10-27 2013-12-03 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
TWI582836B (en) 2010-02-26 2017-05-11 恩特葛瑞斯股份有限公司 Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system
US8779383B2 (en) 2010-02-26 2014-07-15 Advanced Technology Materials, Inc. Enriched silicon precursor compositions and apparatus and processes for utilizing same
US9205392B2 (en) 2010-08-30 2015-12-08 Entegris, Inc. Apparatus and method for preparation of compounds or intermediates thereof from a solid material, and using such compounds and intermediates
TWI583442B (en) 2011-10-10 2017-05-21 恩特葛瑞斯股份有限公司 B2f4 manufacturing process
CN104272433B (en) 2012-02-14 2018-06-05 恩特格里斯公司 For improving the carbon dopant gas of injected beam and source performance life and coflow
JP2016534560A (en) 2013-08-16 2016-11-04 インテグリス・インコーポレーテッド Silicon implantation into a substrate and provision of a silicon precursor composition therefor
CN106025546B (en) * 2016-05-25 2019-03-08 哈尔滨工业大学 The device of using plasma modulation enhancing miniaturization omni-directional antenna electromagnetic radiation
KR20230036153A (en) * 2020-09-11 2023-03-14 가부시키가이샤 코쿠사이 엘렉트릭 Substrate processing device, semiconductor device manufacturing method, plasma generating device and program
WO2023047497A1 (en) * 2021-09-22 2023-03-30 株式会社Kokusai Electric Substrate processing device, plasma generation device, method for manufacturing semiconductor device, and program

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61135037A (en) * 1984-12-06 1986-06-23 Matsushita Electric Ind Co Ltd Device and method for ion irradiation
JPS62103370A (en) * 1985-10-30 1987-05-13 Hitachi Ltd Apparatus for manufacturing electrophotographic sensitive body
JPH0711072B2 (en) * 1986-04-04 1995-02-08 株式会社日立製作所 Ion source device
JPS6338585A (en) * 1986-08-01 1988-02-19 Hitachi Ltd Plasma device
US5036252A (en) * 1988-04-26 1991-07-30 Hauzer Holding Bv Radio frequency ion beam source
DE4034842A1 (en) * 1990-11-02 1992-05-07 Thyssen Edelstahlwerke Ag METHOD FOR PLASMA MECHANICAL CLEANING FOR A SUBSEQUENT PVD OR PECVD COATING
JPH04337076A (en) * 1991-05-14 1992-11-25 Yuuha Mikakutou Seimitsu Kogaku Kenkyusho:Kk High-speed film formation by plasma and radical cvd method under high pressure
US5198677A (en) * 1991-10-11 1993-03-30 The United States Of America As Represented By The United States Department Of Energy Production of N+ ions from a multicusp ion beam apparatus
DE4241927C2 (en) * 1992-12-11 1994-09-22 Max Planck Gesellschaft Self-supporting, insulated electrode arrangement suitable for arrangement in a vacuum vessel, in particular antenna coil for a high-frequency plasma generator
US5309063A (en) * 1993-03-04 1994-05-03 David Sarnoff Research Center, Inc. Inductive coil for inductively coupled plasma production apparatus
DE4337119C2 (en) * 1993-10-29 1996-10-24 Forsch Applikationslabor Plasm VHF plasma source
US5556521A (en) * 1995-03-24 1996-09-17 Sony Corporation Sputter etching apparatus with plasma source having a dielectric pocket and contoured plasma source

Also Published As

Publication number Publication date
WO1998011764A1 (en) 1998-03-19
GB2317265A (en) 1998-03-18
AU3857397A (en) 1998-04-02

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)