AU3857397A - Radio frequency plasma generator - Google Patents

Radio frequency plasma generator

Info

Publication number
AU3857397A
AU3857397A AU38573/97A AU3857397A AU3857397A AU 3857397 A AU3857397 A AU 3857397A AU 38573/97 A AU38573/97 A AU 38573/97A AU 3857397 A AU3857397 A AU 3857397A AU 3857397 A AU3857397 A AU 3857397A
Authority
AU
Australia
Prior art keywords
radio frequency
plasma generator
frequency plasma
generator
radio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU38573/97A
Inventor
Michael Inman
Peter Charles Johnson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricardo AEA Ltd
Original Assignee
AEA Technology PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AEA Technology PLC filed Critical AEA Technology PLC
Publication of AU3857397A publication Critical patent/AU3857397A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
AU38573/97A 1996-09-13 1997-08-08 Radio frequency plasma generator Abandoned AU3857397A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB9619141A GB2317265A (en) 1996-09-13 1996-09-13 Radio frequency plasma generator
GB9619141 1996-09-13
PCT/GB1997/002144 WO1998011764A1 (en) 1996-09-13 1997-08-08 Radio frequency plasma generator

Publications (1)

Publication Number Publication Date
AU3857397A true AU3857397A (en) 1998-04-02

Family

ID=10799881

Family Applications (1)

Application Number Title Priority Date Filing Date
AU38573/97A Abandoned AU3857397A (en) 1996-09-13 1997-08-08 Radio frequency plasma generator

Country Status (3)

Country Link
AU (1) AU3857397A (en)
GB (1) GB2317265A (en)
WO (1) WO1998011764A1 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI520905B (en) 2005-08-30 2016-02-11 安特格利斯公司 Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation
US7454974B2 (en) 2006-09-29 2008-11-25 General Electric Company Probe system, ultrasound system and method of generating ultrasound
US7605595B2 (en) * 2006-09-29 2009-10-20 General Electric Company System for clearance measurement and method of operating the same
EP2068304A1 (en) * 2007-12-05 2009-06-10 General Electric Company Probe system, ultrasound system and method of generating ultrasound
US20110021011A1 (en) 2009-07-23 2011-01-27 Advanced Technology Materials, Inc. Carbon materials for carbon implantation
US8598022B2 (en) 2009-10-27 2013-12-03 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8138071B2 (en) 2009-10-27 2012-03-20 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8062965B2 (en) 2009-10-27 2011-11-22 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8779383B2 (en) 2010-02-26 2014-07-15 Advanced Technology Materials, Inc. Enriched silicon precursor compositions and apparatus and processes for utilizing same
TWI585042B (en) 2010-02-26 2017-06-01 恩特葛瑞斯股份有限公司 Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system
CN103201824B (en) 2010-08-30 2016-09-07 恩特格里斯公司 Prepared compound or its intermediate by solid material and use this compound and the equipment of intermediate and method
TWI583442B (en) 2011-10-10 2017-05-21 恩特葛瑞斯股份有限公司 B2f4 manufacturing process
KR20140133571A (en) 2012-02-14 2014-11-19 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 Carbon dopant gas and co-flow for implant beam and source life performance improvement
US11062906B2 (en) 2013-08-16 2021-07-13 Entegris, Inc. Silicon implantation in substrates and provision of silicon precursor compositions therefor
CN106025546B (en) * 2016-05-25 2019-03-08 哈尔滨工业大学 The device of using plasma modulation enhancing miniaturization omni-directional antenna electromagnetic radiation
JP7411820B2 (en) * 2020-09-11 2024-01-11 株式会社Kokusai Electric Substrate processing equipment, semiconductor device manufacturing method, plasma generation equipment and program
CN117693805A (en) * 2021-09-22 2024-03-12 株式会社国际电气 Substrate processing apparatus, plasma generating apparatus, method for manufacturing semiconductor device, and program

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61135037A (en) * 1984-12-06 1986-06-23 Matsushita Electric Ind Co Ltd Device and method for ion irradiation
JPS62103370A (en) * 1985-10-30 1987-05-13 Hitachi Ltd Apparatus for manufacturing electrophotographic sensitive body
JPH0711072B2 (en) * 1986-04-04 1995-02-08 株式会社日立製作所 Ion source device
JPS6338585A (en) * 1986-08-01 1988-02-19 Hitachi Ltd Plasma device
EP0339554A3 (en) * 1988-04-26 1989-12-20 Hauzer Holding B.V. High-frequency ion beam source
DE4034842A1 (en) * 1990-11-02 1992-05-07 Thyssen Edelstahlwerke Ag METHOD FOR PLASMA MECHANICAL CLEANING FOR A SUBSEQUENT PVD OR PECVD COATING
JPH04337076A (en) * 1991-05-14 1992-11-25 Yuuha Mikakutou Seimitsu Kogaku Kenkyusho:Kk High-speed film formation by plasma and radical cvd method under high pressure
US5198677A (en) * 1991-10-11 1993-03-30 The United States Of America As Represented By The United States Department Of Energy Production of N+ ions from a multicusp ion beam apparatus
DE4241927C2 (en) * 1992-12-11 1994-09-22 Max Planck Gesellschaft Self-supporting, insulated electrode arrangement suitable for arrangement in a vacuum vessel, in particular antenna coil for a high-frequency plasma generator
US5309063A (en) * 1993-03-04 1994-05-03 David Sarnoff Research Center, Inc. Inductive coil for inductively coupled plasma production apparatus
DE4337119C2 (en) * 1993-10-29 1996-10-24 Forsch Applikationslabor Plasm VHF plasma source
US5556521A (en) * 1995-03-24 1996-09-17 Sony Corporation Sputter etching apparatus with plasma source having a dielectric pocket and contoured plasma source

Also Published As

Publication number Publication date
WO1998011764A1 (en) 1998-03-19
GB9619141D0 (en) 1996-10-23
GB2317265A (en) 1998-03-18

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