HK1013890A1 - Contact for semiconductor device and method of manufacturing the same - Google Patents

Contact for semiconductor device and method of manufacturing the same

Info

Publication number
HK1013890A1
HK1013890A1 HK98115086A HK98115086A HK1013890A1 HK 1013890 A1 HK1013890 A1 HK 1013890A1 HK 98115086 A HK98115086 A HK 98115086A HK 98115086 A HK98115086 A HK 98115086A HK 1013890 A1 HK1013890 A1 HK 1013890A1
Authority
HK
Hong Kong
Prior art keywords
manufacturing
contact
same
semiconductor device
semiconductor
Prior art date
Application number
HK98115086A
Other languages
English (en)
Inventor
Tomoyuki Furuhata
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of HK1013890A1 publication Critical patent/HK1013890A1/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843Source or drain regions of field-effect devices
    • H01L29/0847Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743Making of internal connections, substrate contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895Local interconnects; Local pads, as exemplified by patent document EP0896365
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
HK98115086A 1990-11-28 1998-12-23 Contact for semiconductor device and method of manufacturing the same HK1013890A1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP32809590 1990-11-28
JP32809690 1990-11-28
JP12095991 1991-05-27
JP12095891 1991-05-27

Publications (1)

Publication Number Publication Date
HK1013890A1 true HK1013890A1 (en) 1999-09-10

Family

ID=27470736

Family Applications (1)

Application Number Title Priority Date Filing Date
HK98115086A HK1013890A1 (en) 1990-11-28 1998-12-23 Contact for semiconductor device and method of manufacturing the same

Country Status (7)

Country Link
US (1) US5315150A (xx)
EP (1) EP0488154B1 (xx)
JP (1) JP3144000B2 (xx)
KR (1) KR100232910B1 (xx)
DE (1) DE69132995T2 (xx)
HK (1) HK1013890A1 (xx)
TW (1) TW438049U (xx)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0598168B1 (en) * 1992-11-18 1997-05-28 STMicroelectronics S.r.l. Formation of direct contacts in high-density MOS/CMOS processes
US5541137A (en) * 1994-03-24 1996-07-30 Micron Semiconductor Inc. Method of forming improved contacts from polysilicon to silicon or other polysilicon layers
US5466616A (en) * 1994-04-06 1995-11-14 United Microelectronics Corp. Method of producing an LDMOS transistor having reduced dimensions, reduced leakage, and a reduced propensity to latch-up
US5525552A (en) * 1995-06-08 1996-06-11 Taiwan Semiconductor Manufacturing Company Method for fabricating a MOSFET device with a buried contact
US5895766A (en) 1995-09-20 1999-04-20 Micron Technology, Inc. Method of forming a field effect transistor
US5652152A (en) * 1996-04-22 1997-07-29 Chartered Semiconductor Manufacturing Pte, Ltd. Process having high tolerance to buried contact mask misalignment by using a PSG spacer
US5721146A (en) * 1996-04-29 1998-02-24 Taiwan Semiconductor Manufacturing Company Ltd Method of forming buried contact architecture within a trench
US6211556B1 (en) * 1998-04-23 2001-04-03 Texas Instruments - Acer Incorporated Eliminating buried contact trench in MOSFET devices having self-aligned silicide
US6153934A (en) * 1998-07-30 2000-11-28 International Business Machines Corporation Buried butted contact and method for fabricating
JP2002198436A (ja) * 2000-12-25 2002-07-12 Sanyo Electric Co Ltd 半導体集積回路装置およびその製造方法
US7135373B2 (en) * 2003-09-23 2006-11-14 Texas Instruments Incorporated Reduction of channel hot carrier effects in transistor devices
JP2014093739A (ja) * 2012-11-06 2014-05-19 Nagase Techno-Engineering Co Ltd 集音装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7611774A (en) * 1976-10-25 1978-02-28 Philips Nv FET prodn. from silicon semiconductor body - by forming inlaid oxide region having aperture in which the field effect structure is formed
JPS56134757A (en) * 1980-03-26 1981-10-21 Nec Corp Complementary type mos semiconductor device and its manufacture
JPS60219771A (ja) * 1984-04-16 1985-11-02 Mitsubishi Electric Corp Mos形半導体装置の製造方法
JPS6113668A (ja) * 1984-06-29 1986-01-21 Hitachi Ltd 半導体装置
CA1258320A (en) * 1985-04-01 1989-08-08 Madhukar B. Vora Small contactless ram cell
JPH01147829A (ja) * 1987-12-04 1989-06-09 Toshiba Corp 半導体装置の製造方法
JP2508818B2 (ja) * 1988-10-03 1996-06-19 三菱電機株式会社 半導体装置の製造方法
JPH03194974A (ja) * 1989-12-22 1991-08-26 Fuji Electric Co Ltd Mos型半導体装置

Also Published As

Publication number Publication date
KR100232910B1 (ko) 1999-12-01
DE69132995T2 (de) 2002-10-31
EP0488154A2 (en) 1992-06-03
EP0488154A3 (en) 1993-04-07
TW438049U (en) 2001-05-28
US5315150A (en) 1994-05-24
JP3144000B2 (ja) 2001-03-07
EP0488154B1 (en) 2002-04-24
JPH0541486A (ja) 1993-02-19
DE69132995D1 (de) 2002-05-29

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Legal Events

Date Code Title Description
PF Patent in force
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20071126