HK1013890A1 - Contact for semiconductor device and method of manufacturing the same - Google Patents
Contact for semiconductor device and method of manufacturing the sameInfo
- Publication number
- HK1013890A1 HK1013890A1 HK98115086A HK98115086A HK1013890A1 HK 1013890 A1 HK1013890 A1 HK 1013890A1 HK 98115086 A HK98115086 A HK 98115086A HK 98115086 A HK98115086 A HK 98115086A HK 1013890 A1 HK1013890 A1 HK 1013890A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- manufacturing
- contact
- same
- semiconductor device
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP32809590 | 1990-11-28 | ||
JP32809690 | 1990-11-28 | ||
JP12095991 | 1991-05-27 | ||
JP12095891 | 1991-05-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1013890A1 true HK1013890A1 (en) | 1999-09-10 |
Family
ID=27470736
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK98115086A HK1013890A1 (en) | 1990-11-28 | 1998-12-23 | Contact for semiconductor device and method of manufacturing the same |
Country Status (7)
Country | Link |
---|---|
US (1) | US5315150A (xx) |
EP (1) | EP0488154B1 (xx) |
JP (1) | JP3144000B2 (xx) |
KR (1) | KR100232910B1 (xx) |
DE (1) | DE69132995T2 (xx) |
HK (1) | HK1013890A1 (xx) |
TW (1) | TW438049U (xx) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0598168B1 (en) * | 1992-11-18 | 1997-05-28 | STMicroelectronics S.r.l. | Formation of direct contacts in high-density MOS/CMOS processes |
US5541137A (en) * | 1994-03-24 | 1996-07-30 | Micron Semiconductor Inc. | Method of forming improved contacts from polysilicon to silicon or other polysilicon layers |
US5466616A (en) * | 1994-04-06 | 1995-11-14 | United Microelectronics Corp. | Method of producing an LDMOS transistor having reduced dimensions, reduced leakage, and a reduced propensity to latch-up |
US5525552A (en) * | 1995-06-08 | 1996-06-11 | Taiwan Semiconductor Manufacturing Company | Method for fabricating a MOSFET device with a buried contact |
US5895766A (en) | 1995-09-20 | 1999-04-20 | Micron Technology, Inc. | Method of forming a field effect transistor |
US5652152A (en) * | 1996-04-22 | 1997-07-29 | Chartered Semiconductor Manufacturing Pte, Ltd. | Process having high tolerance to buried contact mask misalignment by using a PSG spacer |
US5721146A (en) * | 1996-04-29 | 1998-02-24 | Taiwan Semiconductor Manufacturing Company Ltd | Method of forming buried contact architecture within a trench |
US6211556B1 (en) * | 1998-04-23 | 2001-04-03 | Texas Instruments - Acer Incorporated | Eliminating buried contact trench in MOSFET devices having self-aligned silicide |
US6153934A (en) * | 1998-07-30 | 2000-11-28 | International Business Machines Corporation | Buried butted contact and method for fabricating |
JP2002198436A (ja) * | 2000-12-25 | 2002-07-12 | Sanyo Electric Co Ltd | 半導体集積回路装置およびその製造方法 |
US7135373B2 (en) * | 2003-09-23 | 2006-11-14 | Texas Instruments Incorporated | Reduction of channel hot carrier effects in transistor devices |
JP2014093739A (ja) * | 2012-11-06 | 2014-05-19 | Nagase Techno-Engineering Co Ltd | 集音装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7611774A (en) * | 1976-10-25 | 1978-02-28 | Philips Nv | FET prodn. from silicon semiconductor body - by forming inlaid oxide region having aperture in which the field effect structure is formed |
JPS56134757A (en) * | 1980-03-26 | 1981-10-21 | Nec Corp | Complementary type mos semiconductor device and its manufacture |
JPS60219771A (ja) * | 1984-04-16 | 1985-11-02 | Mitsubishi Electric Corp | Mos形半導体装置の製造方法 |
JPS6113668A (ja) * | 1984-06-29 | 1986-01-21 | Hitachi Ltd | 半導体装置 |
CA1258320A (en) * | 1985-04-01 | 1989-08-08 | Madhukar B. Vora | Small contactless ram cell |
JPH01147829A (ja) * | 1987-12-04 | 1989-06-09 | Toshiba Corp | 半導体装置の製造方法 |
JP2508818B2 (ja) * | 1988-10-03 | 1996-06-19 | 三菱電機株式会社 | 半導体装置の製造方法 |
JPH03194974A (ja) * | 1989-12-22 | 1991-08-26 | Fuji Electric Co Ltd | Mos型半導体装置 |
-
1991
- 1991-11-18 JP JP03302126A patent/JP3144000B2/ja not_active Expired - Fee Related
- 1991-11-26 EP EP91120159A patent/EP0488154B1/en not_active Expired - Lifetime
- 1991-11-26 DE DE69132995T patent/DE69132995T2/de not_active Expired - Fee Related
- 1991-11-26 US US07/797,919 patent/US5315150A/en not_active Expired - Lifetime
- 1991-11-27 TW TW087200826U patent/TW438049U/zh not_active IP Right Cessation
- 1991-11-28 KR KR1019910021945A patent/KR100232910B1/ko not_active IP Right Cessation
-
1998
- 1998-12-23 HK HK98115086A patent/HK1013890A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR100232910B1 (ko) | 1999-12-01 |
DE69132995T2 (de) | 2002-10-31 |
EP0488154A2 (en) | 1992-06-03 |
EP0488154A3 (en) | 1993-04-07 |
TW438049U (en) | 2001-05-28 |
US5315150A (en) | 1994-05-24 |
JP3144000B2 (ja) | 2001-03-07 |
EP0488154B1 (en) | 2002-04-24 |
JPH0541486A (ja) | 1993-02-19 |
DE69132995D1 (de) | 2002-05-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PF | Patent in force | ||
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20071126 |