HK1012777A1 - Voltage-controlled variable spectrum photodetector for 2d colour image detection - Google Patents

Voltage-controlled variable spectrum photodetector for 2d colour image detection

Info

Publication number
HK1012777A1
HK1012777A1 HK98114035A HK98114035A HK1012777A1 HK 1012777 A1 HK1012777 A1 HK 1012777A1 HK 98114035 A HK98114035 A HK 98114035A HK 98114035 A HK98114035 A HK 98114035A HK 1012777 A1 HK1012777 A1 HK 1012777A1
Authority
HK
Hong Kong
Prior art keywords
voltage
image detection
controlled variable
colour image
variable spectrum
Prior art date
Application number
HK98114035A
Other languages
English (en)
Inventor
Cesare Giampiero De
Fernanda Irrera
Fabrizio Palma
Original Assignee
Univ Roma
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Roma filed Critical Univ Roma
Publication of HK1012777A1 publication Critical patent/HK1012777A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
    • H01L31/1055—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type the devices comprising amorphous materials of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectrometry And Color Measurement (AREA)
  • Light Receiving Elements (AREA)
  • Measurement And Recording Of Electrical Phenomena And Electrical Characteristics Of The Living Body (AREA)
  • Measurement Of Current Or Voltage (AREA)
HK98114035A 1994-05-12 1998-12-18 Voltage-controlled variable spectrum photodetector for 2d colour image detection HK1012777A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITRM940294A IT1272248B (it) 1994-05-12 1994-05-12 Fotorivelatore a spettro variabile controllato in tensione, per applicazioni di rivelazione e ricostruzione di immagini bidimensionalia colori

Publications (1)

Publication Number Publication Date
HK1012777A1 true HK1012777A1 (en) 1999-08-06

Family

ID=11402528

Family Applications (1)

Application Number Title Priority Date Filing Date
HK98114035A HK1012777A1 (en) 1994-05-12 1998-12-18 Voltage-controlled variable spectrum photodetector for 2d colour image detection

Country Status (5)

Country Link
US (1) US5557133A (xx)
EP (1) EP0682375B1 (xx)
DE (1) DE69503565T2 (xx)
HK (1) HK1012777A1 (xx)
IT (1) IT1272248B (xx)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1277856B1 (it) * 1995-02-09 1997-11-12 Univ Roma Rivelatore di radiazione ultravioletta in film sottile, con opzione di elevata selettivita' spettrale.
DE19613820A1 (de) * 1996-04-09 1997-10-23 Forschungszentrum Juelich Gmbh Struktur mit einer pin- oder nip-Schichtenfolge
WO1998022982A1 (de) * 1996-11-18 1998-05-28 Boehm Markus Farbbildsensor in ladungsverschiebetechnik
DE19723177A1 (de) * 1997-06-03 1998-12-10 Daimler Benz Ag Spannungsgesteuerter wellenlängenselektiver Photodetektor
IT1291926B1 (it) 1997-06-06 1999-01-21 Univ Roma Sistema di rivelazione di radiazione infrarossa basato su sensori in silicio amorfo e sue leghe
DE19825294A1 (de) * 1998-06-05 1999-12-09 Univ Stuttgart Elektronisches Bauelement, Verfahren zur Herstellung desselben sowie elektronische Schaltung zur Bildverarbeitung
US6459450B2 (en) * 1998-06-24 2002-10-01 Intel Corporation Infrared filterless pixel structure
CA2281265C (en) * 1998-09-22 2003-12-16 Toyota Jidosha Kabushiki Kaisha Method for manufacturing a nonlinear optical thin film
US6111300A (en) * 1998-12-01 2000-08-29 Agilent Technologies Multiple color detection elevated pin photo diode active pixel sensor
US7521658B2 (en) * 2005-12-01 2009-04-21 Aptina Imaging Corporation Pixel having photoconductive layers to absorb different ranges of wavelengths
CN100438083C (zh) * 2006-12-23 2008-11-26 厦门大学 δ掺杂4H-SiC PIN结构紫外光电探测器及其制备方法
CN108963015B (zh) * 2017-05-17 2021-12-10 上海耕岩智能科技有限公司 一种光侦测薄膜、器件、显示装置、光敏二极管的制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4776894A (en) * 1986-08-18 1988-10-11 Sanyo Electric Co., Ltd. Photovoltaic device
US4799968A (en) * 1986-09-26 1989-01-24 Sanyo Electric Co., Ltd. Photovoltaic device
JPS6394125A (ja) * 1986-10-08 1988-04-25 Yamatake Honeywell Co Ltd カラ−センサ
JPH0671097B2 (ja) * 1987-03-31 1994-09-07 鐘淵化学工業株式会社 カラ−センサ−
US5311047A (en) * 1988-11-16 1994-05-10 National Science Council Amorphous SI/SIC heterojunction color-sensitive phototransistor
JP2890441B2 (ja) * 1989-02-23 1999-05-17 工業技術院長 半導体装置

Also Published As

Publication number Publication date
DE69503565T2 (de) 1999-04-22
ITRM940294A0 (it) 1994-05-12
IT1272248B (it) 1997-06-16
EP0682375B1 (en) 1998-07-22
DE69503565D1 (de) 1998-08-27
US5557133A (en) 1996-09-17
EP0682375A1 (en) 1995-11-15
ITRM940294A1 (it) 1995-11-12

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Legal Events

Date Code Title Description
PF Patent in force
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20050510