DE69503565D1 - Spannungsgesteuerter Photodetektor mit veränderlichem Spektrum für 2D-Farbbildaufnahmen - Google Patents
Spannungsgesteuerter Photodetektor mit veränderlichem Spektrum für 2D-FarbbildaufnahmenInfo
- Publication number
- DE69503565D1 DE69503565D1 DE69503565T DE69503565T DE69503565D1 DE 69503565 D1 DE69503565 D1 DE 69503565D1 DE 69503565 T DE69503565 T DE 69503565T DE 69503565 T DE69503565 T DE 69503565T DE 69503565 D1 DE69503565 D1 DE 69503565D1
- Authority
- DE
- Germany
- Prior art keywords
- voltage controlled
- color images
- variable spectrum
- controlled photodetector
- photodetector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001228 spectrum Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
- H01L31/1055—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type the devices comprising amorphous materials of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Spectrometry And Color Measurement (AREA)
- Light Receiving Elements (AREA)
- Measurement And Recording Of Electrical Phenomena And Electrical Characteristics Of The Living Body (AREA)
- Measurement Of Current Or Voltage (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITRM940294A IT1272248B (it) | 1994-05-12 | 1994-05-12 | Fotorivelatore a spettro variabile controllato in tensione, per applicazioni di rivelazione e ricostruzione di immagini bidimensionalia colori |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69503565D1 true DE69503565D1 (de) | 1998-08-27 |
DE69503565T2 DE69503565T2 (de) | 1999-04-22 |
Family
ID=11402528
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69503565T Expired - Lifetime DE69503565T2 (de) | 1994-05-12 | 1995-05-10 | Spannungsgesteuerter Photodetektor mit veränderlichem Spektrum für 2D-Farbbildaufnahmen |
Country Status (5)
Country | Link |
---|---|
US (1) | US5557133A (de) |
EP (1) | EP0682375B1 (de) |
DE (1) | DE69503565T2 (de) |
HK (1) | HK1012777A1 (de) |
IT (1) | IT1272248B (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1277856B1 (it) * | 1995-02-09 | 1997-11-12 | Univ Roma | Rivelatore di radiazione ultravioletta in film sottile, con opzione di elevata selettivita' spettrale. |
DE19613820A1 (de) * | 1996-04-09 | 1997-10-23 | Forschungszentrum Juelich Gmbh | Struktur mit einer pin- oder nip-Schichtenfolge |
WO1998022982A1 (de) * | 1996-11-18 | 1998-05-28 | Boehm Markus | Farbbildsensor in ladungsverschiebetechnik |
DE19723177A1 (de) * | 1997-06-03 | 1998-12-10 | Daimler Benz Ag | Spannungsgesteuerter wellenlängenselektiver Photodetektor |
IT1291926B1 (it) * | 1997-06-06 | 1999-01-21 | Univ Roma | Sistema di rivelazione di radiazione infrarossa basato su sensori in silicio amorfo e sue leghe |
DE19825294A1 (de) * | 1998-06-05 | 1999-12-09 | Univ Stuttgart | Elektronisches Bauelement, Verfahren zur Herstellung desselben sowie elektronische Schaltung zur Bildverarbeitung |
US6459450B2 (en) * | 1998-06-24 | 2002-10-01 | Intel Corporation | Infrared filterless pixel structure |
CA2281265C (en) * | 1998-09-22 | 2003-12-16 | Toyota Jidosha Kabushiki Kaisha | Method for manufacturing a nonlinear optical thin film |
US6111300A (en) * | 1998-12-01 | 2000-08-29 | Agilent Technologies | Multiple color detection elevated pin photo diode active pixel sensor |
US7521658B2 (en) * | 2005-12-01 | 2009-04-21 | Aptina Imaging Corporation | Pixel having photoconductive layers to absorb different ranges of wavelengths |
CN100438083C (zh) * | 2006-12-23 | 2008-11-26 | 厦门大学 | δ掺杂4H-SiC PIN结构紫外光电探测器及其制备方法 |
CN108963015B (zh) * | 2017-05-17 | 2021-12-10 | 上海耕岩智能科技有限公司 | 一种光侦测薄膜、器件、显示装置、光敏二极管的制备方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4776894A (en) * | 1986-08-18 | 1988-10-11 | Sanyo Electric Co., Ltd. | Photovoltaic device |
US4799968A (en) * | 1986-09-26 | 1989-01-24 | Sanyo Electric Co., Ltd. | Photovoltaic device |
JPS6394125A (ja) * | 1986-10-08 | 1988-04-25 | Yamatake Honeywell Co Ltd | カラ−センサ |
JPH0671097B2 (ja) * | 1987-03-31 | 1994-09-07 | 鐘淵化学工業株式会社 | カラ−センサ− |
US5311047A (en) * | 1988-11-16 | 1994-05-10 | National Science Council | Amorphous SI/SIC heterojunction color-sensitive phototransistor |
JP2890441B2 (ja) * | 1989-02-23 | 1999-05-17 | 工業技術院長 | 半導体装置 |
-
1994
- 1994-05-12 IT ITRM940294A patent/IT1272248B/it active IP Right Grant
-
1995
- 1995-05-09 US US08/437,498 patent/US5557133A/en not_active Expired - Lifetime
- 1995-05-10 DE DE69503565T patent/DE69503565T2/de not_active Expired - Lifetime
- 1995-05-10 EP EP95830191A patent/EP0682375B1/de not_active Expired - Lifetime
-
1998
- 1998-12-18 HK HK98114035A patent/HK1012777A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0682375B1 (de) | 1998-07-22 |
IT1272248B (it) | 1997-06-16 |
ITRM940294A1 (it) | 1995-11-12 |
US5557133A (en) | 1996-09-17 |
ITRM940294A0 (it) | 1994-05-12 |
EP0682375A1 (de) | 1995-11-15 |
DE69503565T2 (de) | 1999-04-22 |
HK1012777A1 (en) | 1999-08-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |