HK1011793A1 - Method fo fabricating epitaxial semiconductor material - Google Patents

Method fo fabricating epitaxial semiconductor material

Info

Publication number
HK1011793A1
HK1011793A1 HK98112569A HK98112569A HK1011793A1 HK 1011793 A1 HK1011793 A1 HK 1011793A1 HK 98112569 A HK98112569 A HK 98112569A HK 98112569 A HK98112569 A HK 98112569A HK 1011793 A1 HK1011793 A1 HK 1011793A1
Authority
HK
Hong Kong
Prior art keywords
semiconductor material
epitaxial semiconductor
fabricating epitaxial
fabricating
semiconductor
Prior art date
Application number
HK98112569A
Other languages
English (en)
Inventor
Joseph Y Chan
Larry Laterza
Dennis Garbis
Willem G Einthoven
Original Assignee
Gen Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Semiconductor Inc filed Critical Gen Semiconductor Inc
Publication of HK1011793A1 publication Critical patent/HK1011793A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66136—PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/221—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities of killers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
    • H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
HK98112569A 1993-07-01 1998-11-30 Method fo fabricating epitaxial semiconductor material HK1011793A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/082,951 US5342805A (en) 1993-07-01 1993-07-01 Method of growing a semiconductor material by epilaxy

Publications (1)

Publication Number Publication Date
HK1011793A1 true HK1011793A1 (en) 1999-07-16

Family

ID=22174496

Family Applications (1)

Application Number Title Priority Date Filing Date
HK98112569A HK1011793A1 (en) 1993-07-01 1998-11-30 Method fo fabricating epitaxial semiconductor material

Country Status (8)

Country Link
US (1) US5342805A (ko)
EP (1) EP0632486B1 (ko)
JP (1) JP2638737B2 (ko)
KR (1) KR0166989B1 (ko)
DE (1) DE69425787T2 (ko)
HK (1) HK1011793A1 (ko)
SG (1) SG47620A1 (ko)
TW (1) TW228608B (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5640043A (en) 1995-12-20 1997-06-17 General Instrument Corporation Of Delaware High voltage silicon diode with optimum placement of silicon-germanium layers
DE69941446D1 (de) 1998-04-09 2009-11-05 Nxp Bv Halbleiter mit gleichrichtendem übergang und seine herstellung
US6858503B1 (en) * 2003-02-05 2005-02-22 Advanced Micro Devices, Inc. Depletion to avoid cross contamination
JP5067381B2 (ja) * 2009-02-19 2012-11-07 東京エレクトロン株式会社 熱処理装置の運転方法
JP2015149346A (ja) * 2014-02-05 2015-08-20 三菱電機株式会社 半導体装置の製造方法および半導体装置
US10361531B2 (en) 2014-02-25 2019-07-23 Philips Photonics Gmbh Light emitting semiconductor devices with getter layer
CN105814694B (zh) 2014-10-03 2019-03-08 富士电机株式会社 半导体装置以及半导体装置的制造方法
JP7313201B2 (ja) * 2019-06-14 2023-07-24 東京エレクトロン株式会社 エッチング方法およびエッチング装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5084411A (en) * 1988-11-29 1992-01-28 Hewlett-Packard Company Semiconductor processing with silicon cap over Si1-x Gex Film
JPH02235327A (ja) * 1989-03-08 1990-09-18 Fujitsu Ltd 半導体成長装置および半導体成長方法
US5097308A (en) * 1990-03-13 1992-03-17 General Instrument Corp. Method for controlling the switching speed of bipolar power devices
US5102810A (en) 1990-03-13 1992-04-07 General Instrument Corp. Method for controlling the switching speed of bipolar power devices
DE4119531A1 (de) * 1991-06-13 1992-12-17 Wacker Chemitronic Epitaxierte halbleiterscheiben mit sauerstoffarmer zone einstellbarer ausdehnung und verfahren zu ihrer herstellung

Also Published As

Publication number Publication date
TW228608B (en) 1994-08-21
EP0632486A3 (en) 1995-03-29
SG47620A1 (en) 1998-04-17
DE69425787T2 (de) 2001-01-04
DE69425787D1 (de) 2000-10-12
KR0166989B1 (ko) 1999-01-15
JP2638737B2 (ja) 1997-08-06
KR950004579A (ko) 1995-02-18
US5342805A (en) 1994-08-30
JPH0737815A (ja) 1995-02-07
EP0632486B1 (en) 2000-09-06
EP0632486A2 (en) 1995-01-04

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Legal Events

Date Code Title Description
CORR Corrigendum

Free format text: CORRECTED DATA OF SECTION 27 TO JOURNAL OF : [54] METHOD OF FABRICATING EPITAXIAL SEMICONDUCTOR MATERIAL

PF Patent in force
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20090420