GB9819338D0 - Laser crystallisation of thin films - Google Patents

Laser crystallisation of thin films

Info

Publication number
GB9819338D0
GB9819338D0 GBGB9819338.6A GB9819338A GB9819338D0 GB 9819338 D0 GB9819338 D0 GB 9819338D0 GB 9819338 A GB9819338 A GB 9819338A GB 9819338 D0 GB9819338 D0 GB 9819338D0
Authority
GB
United Kingdom
Prior art keywords
thin films
laser crystallisation
crystallisation
laser
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB9819338.6A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Priority to GBGB9819338.6A priority Critical patent/GB9819338D0/en
Publication of GB9819338D0 publication Critical patent/GB9819338D0/en
Priority to PCT/EP1999/006161 priority patent/WO2000014784A1/en
Priority to JP2000569433A priority patent/JP2002524874A/ja
Priority to EP99944473A priority patent/EP1048061A1/en
Priority to US09/379,060 priority patent/US6169014B1/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/381—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/381—Beam shaping, e.g. using a mask
    • H10P14/3812—Shape of mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/382—Scanning of a beam
GBGB9819338.6A 1998-09-04 1998-09-04 Laser crystallisation of thin films Ceased GB9819338D0 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GBGB9819338.6A GB9819338D0 (en) 1998-09-04 1998-09-04 Laser crystallisation of thin films
PCT/EP1999/006161 WO2000014784A1 (en) 1998-09-04 1999-08-23 Double-pulse laser crystallisation of thin semiconductor films
JP2000569433A JP2002524874A (ja) 1998-09-04 1999-08-23 薄い半導体膜の二重パルスレーザー結晶化
EP99944473A EP1048061A1 (en) 1998-09-04 1999-08-23 Double-pulse laser crystallisation of thin semiconductor films
US09/379,060 US6169014B1 (en) 1998-09-04 1999-08-23 Laser crystallization of thin films

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB9819338.6A GB9819338D0 (en) 1998-09-04 1998-09-04 Laser crystallisation of thin films

Publications (1)

Publication Number Publication Date
GB9819338D0 true GB9819338D0 (en) 1998-10-28

Family

ID=10838370

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB9819338.6A Ceased GB9819338D0 (en) 1998-09-04 1998-09-04 Laser crystallisation of thin films

Country Status (5)

Country Link
US (1) US6169014B1 (https=)
EP (1) EP1048061A1 (https=)
JP (1) JP2002524874A (https=)
GB (1) GB9819338D0 (https=)
WO (1) WO2000014784A1 (https=)

Families Citing this family (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6555449B1 (en) * 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
US20040134894A1 (en) * 1999-12-28 2004-07-15 Bo Gu Laser-based system for memory link processing with picosecond lasers
US7723642B2 (en) * 1999-12-28 2010-05-25 Gsi Group Corporation Laser-based system for memory link processing with picosecond lasers
US7838794B2 (en) 1999-12-28 2010-11-23 Gsi Group Corporation Laser-based method and system for removing one or more target link structures
US6281471B1 (en) * 1999-12-28 2001-08-28 Gsi Lumonics, Inc. Energy-efficient, laser-based method and system for processing target material
KR100671212B1 (ko) * 1999-12-31 2007-01-18 엘지.필립스 엘시디 주식회사 폴리실리콘 형성방법
US20030222324A1 (en) * 2000-01-10 2003-12-04 Yunlong Sun Laser systems for passivation or link processing with a set of laser pulses
US7671295B2 (en) * 2000-01-10 2010-03-02 Electro Scientific Industries, Inc. Processing a memory link with a set of at least two laser pulses
US20060141681A1 (en) * 2000-01-10 2006-06-29 Yunlong Sun Processing a memory link with a set of at least two laser pulses
US6368945B1 (en) 2000-03-16 2002-04-09 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification
US6830993B1 (en) 2000-03-21 2004-12-14 The Trustees Of Columbia University In The City Of New York Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
KR100672909B1 (ko) * 2000-03-21 2007-01-22 더 트러스티스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 Ｓｌｓ 방법에 의한 처리중 및 처리후의 실리콘 박막의표면 평탄화
KR100854834B1 (ko) 2000-10-10 2008-08-27 더 트러스티스 오브 컬럼비아 유니버시티 인 더 시티 오브 뉴욕 얇은 금속층을 가공하는 방법 및 장치
CN1200320C (zh) 2000-11-27 2005-05-04 纽约市哥伦比亚大学托管会 用激光结晶化法加工衬底上半导体薄膜区域的方法和掩模投影系统
US6639177B2 (en) * 2001-03-29 2003-10-28 Gsi Lumonics Corporation Method and system for processing one or more microstructures of a multi-material device
CA2412603A1 (en) * 2001-04-19 2002-10-31 The Trustee Of Columbia University In The City Of New York Method and system for providing a single-scan, continuous motion sequential lateral solidification
JP3977038B2 (ja) * 2001-08-27 2007-09-19 株式会社半導体エネルギー研究所 レーザ照射装置およびレーザ照射方法
US7160763B2 (en) * 2001-08-27 2007-01-09 The Trustees Of Columbia University In The City Of New York Polycrystalline TFT uniformity through microstructure mis-alignment
JP4006994B2 (ja) * 2001-12-18 2007-11-14 株式会社リコー 立体構造体の加工方法、立体形状品の製造方法及び立体構造体
US6951995B2 (en) 2002-03-27 2005-10-04 Gsi Lumonics Corp. Method and system for high-speed, precise micromachining an array of devices
WO2003084688A2 (en) * 2002-04-01 2003-10-16 The Trustees Of Columbia University In The City Of New York Method and system for providing a thin film
AU2003265498A1 (en) * 2002-08-19 2004-03-03 The Trustees Of Columbia University In The City Of New York Process and system for laser crystallization processing of film regions on a substrate to provide substantial uniformity within areas in such regions and edge areas thereof, and a structure of such film regions
AU2003272222A1 (en) * 2002-08-19 2004-03-03 The Trustees Of Columbia University In The City Of New York Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and structure of such film regions
WO2004017379A2 (en) 2002-08-19 2004-02-26 The Trustees Of Columbia University In The City Of New York Process and system for processing a thin film sample and thin film structure
TWI331803B (en) * 2002-08-19 2010-10-11 Univ Columbia A single-shot semiconductor processing system and method having various irradiation patterns
KR101191837B1 (ko) * 2003-02-19 2012-10-18 더 트러스티스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 순차적 측면 고상화 기술을 이용하여 결정화되는 복수의 반도체 박막을 가공하는 방법 및 장치
CN100593292C (zh) 2003-08-19 2010-03-03 电子科学工业公司 产生定制的激光脉冲组
WO2005029546A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination
WO2005029548A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York System and process for providing multiple beam sequential lateral solidification
US7164152B2 (en) * 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
US7364952B2 (en) * 2003-09-16 2008-04-29 The Trustees Of Columbia University In The City Of New York Systems and methods for processing thin films
TWI351713B (en) * 2003-09-16 2011-11-01 Univ Columbia Method and system for providing a single-scan, con
WO2005029551A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
WO2005029550A2 (en) * 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for producing crystalline thin films with a uniform crystalline orientation
US7318866B2 (en) * 2003-09-16 2008-01-15 The Trustees Of Columbia University In The City Of New York Systems and methods for inducing crystallization of thin films using multiple optical paths
WO2005029547A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Enhancing the width of polycrystalline grains with mask
US7311778B2 (en) 2003-09-19 2007-12-25 The Trustees Of Columbia University In The City Of New York Single scan irradiation for crystallization of thin films
US7139294B2 (en) * 2004-05-14 2006-11-21 Electro Scientific Industries, Inc. Multi-output harmonic laser and methods employing same
US7645337B2 (en) * 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
US20060128073A1 (en) * 2004-12-09 2006-06-15 Yunlong Sun Multiple-wavelength laser micromachining of semiconductor devices
US7301981B2 (en) * 2004-12-09 2007-11-27 Electro Scientific Industries, Inc. Methods for synchronized pulse shape tailoring
US20060191884A1 (en) * 2005-01-21 2006-08-31 Johnson Shepard D High-speed, precise, laser-based material processing method and system
US8221544B2 (en) * 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
DE602006004913D1 (de) * 2005-04-28 2009-03-12 Semiconductor Energy Lab Verfahren und Vorrichtung zur Herstellung von Halbleitern mittels Laserstrahlung
KR101368570B1 (ko) * 2005-08-16 2014-02-27 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 박막의 고수율 결정화
WO2007067541A2 (en) * 2005-12-05 2007-06-14 The Trustees Of Columbia University In The City Of New York Systems and methods for processing a film, and thin films
WO2008091242A2 (en) * 2005-12-21 2008-07-31 Uva Patent Foundation Systems and methods of laser texturing and crystallization of material surfaces
US8846551B2 (en) 2005-12-21 2014-09-30 University Of Virginia Patent Foundation Systems and methods of laser texturing of material surfaces and their applications
KR101191404B1 (ko) 2006-01-12 2012-10-16 삼성디스플레이 주식회사 실리콘 결정화용 마스크와 이를 이용한 실리콘 결정화 방법및 표시 장치
US7605343B2 (en) * 2006-05-24 2009-10-20 Electro Scientific Industries, Inc. Micromachining with short-pulsed, solid-state UV laser
US8084706B2 (en) * 2006-07-20 2011-12-27 Gsi Group Corporation System and method for laser processing at non-constant velocities
US20100143744A1 (en) * 2007-03-09 2010-06-10 University Of Virginia Patent Foundation Systems and Methods of Laser Texturing of Material Surfaces and their Applications
DE102007025942A1 (de) * 2007-06-04 2008-12-11 Coherent Gmbh Verfahren zur selektiven thermischen Oberflächenbehandlung eines Flächensubstrates
US8614471B2 (en) * 2007-09-21 2013-12-24 The Trustees Of Columbia University In The City Of New York Collections of laterally crystallized semiconductor islands for use in thin film transistors
JP5385289B2 (ja) 2007-09-25 2014-01-08 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 横方向に結晶化した薄膜上に作製される薄膜トランジスタデバイスにおいて高い均一性を生成する方法
WO2009067688A1 (en) 2007-11-21 2009-05-28 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
KR20100105606A (ko) 2007-11-21 2010-09-29 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 에피택셜하게 텍스쳐화된 후막의 제조를 위한 시스템 및 방법
US8012861B2 (en) 2007-11-21 2011-09-06 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
WO2009108936A1 (en) * 2008-02-29 2009-09-03 The Trustees Of Columbia University In The City Of New York Lithographic method of making uniform crystalline si films
KR101413370B1 (ko) * 2008-02-29 2014-06-30 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 결정질 막 제조 방법, 태양전지 형성 방법 및 이 방법에 의해 제조된 결정질 막 및 태양 전지
US8569155B2 (en) * 2008-02-29 2013-10-29 The Trustees Of Columbia University In The City Of New York Flash lamp annealing crystallization for large area thin films
KR20110094022A (ko) 2008-11-14 2011-08-19 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 박막 결정화를 위한 시스템 및 방법
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
US8440581B2 (en) 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
WO2011065992A1 (en) * 2009-11-24 2011-06-03 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
TWI528418B (zh) 2009-11-30 2016-04-01 應用材料股份有限公司 在半導體應用上的結晶處理
US20110210105A1 (en) * 2009-12-30 2011-09-01 Gsi Group Corporation Link processing with high speed beam deflection
US10131086B2 (en) 2011-06-30 2018-11-20 University Of Virginia Patent Foundation Micro-structure and nano-structure replication methods and article of manufacture
TWI590309B (zh) * 2011-09-01 2017-07-01 應用材料股份有限公司 結晶化的方法
TWI577488B (zh) * 2014-11-17 2017-04-11 財團法人工業技術研究院 表面加工方法
KR102440115B1 (ko) 2015-11-13 2022-09-05 삼성디스플레이 주식회사 엑시머 레이저 어닐링 방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3585088A (en) * 1968-10-18 1971-06-15 Ibm Methods of producing single crystals on supporting substrates
US3600237A (en) * 1969-12-17 1971-08-17 Us Navy Controlled nucleation in zone recrystallized insb films
US4309225A (en) * 1979-09-13 1982-01-05 Massachusetts Institute Of Technology Method of crystallizing amorphous material with a moving energy beam
US4330363A (en) * 1980-08-28 1982-05-18 Xerox Corporation Thermal gradient control for enhanced laser induced crystallization of predefined semiconductor areas
US4400715A (en) * 1980-11-19 1983-08-23 International Business Machines Corporation Thin film semiconductor device and method for manufacture
JPS5821319A (ja) * 1981-07-30 1983-02-08 Fujitsu Ltd レ−ザアニ−ル方法
US4604791A (en) * 1982-09-24 1986-08-12 Todorof William J Method for producing multi-layer, thin-film, flexible silicon alloy photovoltaic cells
WO1995026517A1 (en) * 1992-11-10 1995-10-05 United States Department Of Energy Laser beam pulse formatting method
JP3204986B2 (ja) 1996-05-28 2001-09-04 ザ トラスティース オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 基板上の半導体膜領域の結晶化処理及びこの方法により製造されたデバイス
US6014944A (en) * 1997-09-19 2000-01-18 The United States Of America As Represented By The Secretary Of The Navy Apparatus for improving crystalline thin films with a contoured beam pulsed laser

Also Published As

Publication number Publication date
EP1048061A1 (en) 2000-11-02
WO2000014784A1 (en) 2000-03-16
US6169014B1 (en) 2001-01-02
JP2002524874A (ja) 2002-08-06

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