GB979844A - Improvements in or relating to silicon semi-conductors - Google Patents

Improvements in or relating to silicon semi-conductors

Info

Publication number
GB979844A
GB979844A GB44649/62A GB4464962A GB979844A GB 979844 A GB979844 A GB 979844A GB 44649/62 A GB44649/62 A GB 44649/62A GB 4464962 A GB4464962 A GB 4464962A GB 979844 A GB979844 A GB 979844A
Authority
GB
United Kingdom
Prior art keywords
silicon
ohm
nov
conductivity
resistivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB44649/62A
Other languages
English (en)
Inventor
Jean Messier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR879986A external-priority patent/FR1313990A/fr
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of GB979844A publication Critical patent/GB979844A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22FCHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/16Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/261Bombardment with radiation to produce a nuclear reaction transmuting chemical elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
  • Particle Accelerators (AREA)
GB44649/62A 1961-11-24 1962-11-26 Improvements in or relating to silicon semi-conductors Expired GB979844A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR879986A FR1313990A (fr) 1961-11-24 1961-11-24 Procédé d'obtention de silicium utilisable comme semi-conducteur
FR915372A FR82629E (fr) 1961-11-24 1962-11-14 Procédé d'obtention de silicium utilisable comme semi-conducteur
FR964615A FR85348E (fr) 1961-11-24 1964-02-21 Procédé d'obtention de silicium utilisable comme semi-conducteur

Publications (1)

Publication Number Publication Date
GB979844A true GB979844A (en) 1965-01-06

Family

ID=27246275

Family Applications (2)

Application Number Title Priority Date Filing Date
GB44649/62A Expired GB979844A (en) 1961-11-24 1962-11-26 Improvements in or relating to silicon semi-conductors
GB3842/65A Expired GB1067036A (en) 1961-11-24 1965-01-28 Improvements in or relating to silicon

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB3842/65A Expired GB1067036A (en) 1961-11-24 1965-01-28 Improvements in or relating to silicon

Country Status (3)

Country Link
BE (2) BE659066A (en, 2012)
FR (2) FR82629E (en, 2012)
GB (2) GB979844A (en, 2012)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2183092A (en) * 1985-11-12 1987-05-28 Sony Corp Irradiating silicon crystals used for solid state image devices

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2183092A (en) * 1985-11-12 1987-05-28 Sony Corp Irradiating silicon crystals used for solid state image devices
GB2183092B (en) * 1985-11-12 1990-04-18 Sony Corp Solid-state image pick-up device with uniform distribution of dopant therein and production method therefor
AU597915B2 (en) * 1985-11-12 1990-06-14 Sony Corporation Solid-state image pick-up device with uniform distribution of dopant therein and production method therefor
AT399420B (de) * 1985-11-12 1995-05-26 Sony Corp Verfahren für die herstellung einer festkörper-bildaufnahmevorrichtung

Also Published As

Publication number Publication date
FR82629E (fr) 1964-03-20
FR85348E (fr) 1965-07-23
BE659066A (en, 2012) 1965-05-17
GB1067036A (en) 1967-04-26
BE625248A (en, 2012)

Similar Documents

Publication Publication Date Title
Strack Ion bombardment of silicon in a glow discharge
Tanenbaum et al. Preparation of uniform resistivity n‐type silicon by nuclear transmutation
US3293084A (en) Method of treating semiconductor bodies by ion bombardment
GB986939A (en) Nuclear fuel element with carbon jacket
US3076732A (en) Uniform n-type silicon
McCaldin et al. Silicon heavily doped by energetic cesium ions
GB979844A (en) Improvements in or relating to silicon semi-conductors
Harrop et al. Influence of gamma flux on the electrical conductivity of ZrO2 films and its relevance to corrosion in nuclear reactors
COLLINS et al. Annealing Reactions in Potassium Chromate: Part 3. Dopant-Atom and Recoil-Atom Annealing in Nearly Identical Crystals of Potassium Chromate
JPS5785268A (en) Semiconductor radiation detector
SU646706A1 (ru) Способ обработки полупроводниковых детекторов
GB966144A (en) Shielding arrangement for nuclear reactors
Baruch et al. VACANCY ENHANCED DIFFUSION IN SILICON. EFFECTS OF IRRADIATION AND OF CHEMICAL IMPURITIES
GB989393A (en) Improvements in or relating to nuclear reactor fuel elements
GB940681A (en) Semiconductor devices
JPS5533020A (en) Manufacture of semiconductor device
Johansson et al. Influence of ultrasonic agitation on the electrical behavior of ion implanted silicon
GB861258A (en) Improvements in or relating to heating element assemblies for electric furnaces
JPS5669825A (en) Impurity-adding method for compound semiconductor
US3128253A (en) Infrared detector and method of making same
Kirk et al. A Facility and Program at IPNS to Study Defects Produced by Fast Neutrons in Semiconductors
Batishche et al. Investigation of the thermal stability of ion-implanted and laser annealed silicon layers
JPS6427268A (en) Manufacture of electrostatic induction thyristor
GB892559A (en) A method of preparing fuel elements for nuclear reactors
Arkharov et al. The use of radioactive indicators in solving the problem of internal adsorption in solid bodies