GB979844A - Improvements in or relating to silicon semi-conductors - Google Patents

Improvements in or relating to silicon semi-conductors

Info

Publication number
GB979844A
GB979844A GB4464962A GB4464962A GB979844A GB 979844 A GB979844 A GB 979844A GB 4464962 A GB4464962 A GB 4464962A GB 4464962 A GB4464962 A GB 4464962A GB 979844 A GB979844 A GB 979844A
Authority
GB
United Kingdom
Prior art keywords
silicon
ohm
nov
conductivity
resistivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4464962A
Inventor
Jean Messier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR879986A external-priority patent/FR1313990A/en
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of GB979844A publication Critical patent/GB979844A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/261—Bombardment with radiation to produce a nuclear reaction transmuting chemical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Thermal Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
  • Particle Accelerators (AREA)

Abstract

979, 844. Transmutation of elements. COMMISSARIAT A L'ENERGIE ATOMIQUE. Nov. 26, 1962 [Nov. 24, 1961; Nov. 14,1962], No. 44649/62. Heading G6P. [Also in Division H1] In a process of preparing intrinsic silicon from low P conductivity silicon formed by the floating zone method, an initial sample having a resistivity # of at least 900 ohm cm. is subjected to thermal neutron bombardment at an integrated flux per sq. cm. of 7 x 10<SP>19</SP>/#. The thermal neutrons convert some of the silicon into phosphorus which has sufficient N conductivity to balance the initial P conductivity. After irradiation the silicon should be annealed by heating to at least 500‹C., e.g. 550‹C., for at least 12 hours. In one example the initial resistivity is 5000 ohm cm. and after treatment as above the resistivity is 50, 000 ohm cm. Small quantities of donor and acceptor materials are then fixed to the faces 3, 4 of the silicon block 1 and diffused into the block by heat treatment in a neutral atmosphere followed by a cooling stage wherein the temperature is reduced by at least 5‹C. per minute. In this way there are formed N and P conduction regions at each end separated by a thick intrinsic region, the total thickness being 4 mm. Electrodes 9 and 11 are secured by gold eutectics, and the diode so formed can withstand high inverse voltages, e.g. 20 kV, and is suitable for use as an H.T. rectifier in a television receiver. Discharges between the electrodes along the surface of the element 1 .can be prevented by coating the surface with resin, by oxidising the surface, by immersion in a silicone oil, or by disposing the element in an evacuated envelope. The diqde may alternatively be used for detecting ionising radiation.
GB4464962A 1961-11-24 1962-11-26 Improvements in or relating to silicon semi-conductors Expired GB979844A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR879986A FR1313990A (en) 1961-11-24 1961-11-24 Process for obtaining silicon which can be used as a semiconductor
FR915372A FR82629E (en) 1961-11-24 1962-11-14 Process for obtaining silicon which can be used as a semiconductor
FR964615A FR85348E (en) 1961-11-24 1964-02-21 Process for obtaining silicon which can be used as a semiconductor

Publications (1)

Publication Number Publication Date
GB979844A true GB979844A (en) 1965-01-06

Family

ID=27246275

Family Applications (2)

Application Number Title Priority Date Filing Date
GB4464962A Expired GB979844A (en) 1961-11-24 1962-11-26 Improvements in or relating to silicon semi-conductors
GB384265A Expired GB1067036A (en) 1961-11-24 1965-01-28 Improvements in or relating to silicon

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB384265A Expired GB1067036A (en) 1961-11-24 1965-01-28 Improvements in or relating to silicon

Country Status (3)

Country Link
BE (2) BE659066A (en)
FR (2) FR82629E (en)
GB (2) GB979844A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2183092A (en) * 1985-11-12 1987-05-28 Sony Corp Irradiating silicon crystals used for solid state image devices

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2183092A (en) * 1985-11-12 1987-05-28 Sony Corp Irradiating silicon crystals used for solid state image devices
GB2183092B (en) * 1985-11-12 1990-04-18 Sony Corp Solid-state image pick-up device with uniform distribution of dopant therein and production method therefor
AU597915B2 (en) * 1985-11-12 1990-06-14 Sony Corporation Solid-state image pick-up device with uniform distribution of dopant therein and production method therefor
AT399420B (en) * 1985-11-12 1995-05-26 Sony Corp METHOD FOR PRODUCING A SOLID-IMAGE IMAGING DEVICE

Also Published As

Publication number Publication date
FR82629E (en) 1964-03-20
GB1067036A (en) 1967-04-26
BE659066A (en) 1965-05-17
BE625248A (en)
FR85348E (en) 1965-07-23

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