FR85348E - Procédé d'obtention de silicium utilisable comme semi-conducteur - Google Patents

Procédé d'obtention de silicium utilisable comme semi-conducteur

Info

Publication number
FR85348E
FR85348E FR964615A FR964615A FR85348E FR 85348 E FR85348 E FR 85348E FR 964615 A FR964615 A FR 964615A FR 964615 A FR964615 A FR 964615A FR 85348 E FR85348 E FR 85348E
Authority
FR
France
Prior art keywords
semiconductor
obtaining silicon
silicon
obtaining
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR964615A
Other languages
English (en)
Inventor
Jean Messier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to BE625248D priority Critical patent/BE625248A/xx
Priority claimed from FR879986A external-priority patent/FR1313990A/fr
Priority to FR915372A priority patent/FR82629E/fr
Priority to GB4464962A priority patent/GB979844A/en
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR964615A priority patent/FR85348E/fr
Priority to GB384265A priority patent/GB1067036A/en
Priority to BE659066A priority patent/BE659066A/xx
Application granted granted Critical
Publication of FR85348E publication Critical patent/FR85348E/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/261—Bombardment with radiation to produce a nuclear reaction transmuting chemical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
FR964615A 1961-11-24 1964-02-21 Procédé d'obtention de silicium utilisable comme semi-conducteur Expired FR85348E (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
BE625248D BE625248A (fr) 1961-11-24
FR915372A FR82629E (fr) 1961-11-24 1962-11-14 Procédé d'obtention de silicium utilisable comme semi-conducteur
GB4464962A GB979844A (en) 1961-11-24 1962-11-26 Improvements in or relating to silicon semi-conductors
FR964615A FR85348E (fr) 1961-11-24 1964-02-21 Procédé d'obtention de silicium utilisable comme semi-conducteur
GB384265A GB1067036A (en) 1961-11-24 1965-01-28 Improvements in or relating to silicon
BE659066A BE659066A (fr) 1961-11-24 1965-01-29

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR879986A FR1313990A (fr) 1961-11-24 1961-11-24 Procédé d'obtention de silicium utilisable comme semi-conducteur
FR915372A FR82629E (fr) 1961-11-24 1962-11-14 Procédé d'obtention de silicium utilisable comme semi-conducteur
FR964615A FR85348E (fr) 1961-11-24 1964-02-21 Procédé d'obtention de silicium utilisable comme semi-conducteur

Publications (1)

Publication Number Publication Date
FR85348E true FR85348E (fr) 1965-07-23

Family

ID=27246275

Family Applications (2)

Application Number Title Priority Date Filing Date
FR915372A Expired FR82629E (fr) 1961-11-24 1962-11-14 Procédé d'obtention de silicium utilisable comme semi-conducteur
FR964615A Expired FR85348E (fr) 1961-11-24 1964-02-21 Procédé d'obtention de silicium utilisable comme semi-conducteur

Family Applications Before (1)

Application Number Title Priority Date Filing Date
FR915372A Expired FR82629E (fr) 1961-11-24 1962-11-14 Procédé d'obtention de silicium utilisable comme semi-conducteur

Country Status (3)

Country Link
BE (2) BE659066A (fr)
FR (2) FR82629E (fr)
GB (2) GB979844A (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4836788A (en) * 1985-11-12 1989-06-06 Sony Corporation Production of solid-state image pick-up device with uniform distribution of dopants

Also Published As

Publication number Publication date
FR82629E (fr) 1964-03-20
GB1067036A (en) 1967-04-26
BE659066A (fr) 1965-05-17
GB979844A (en) 1965-01-06
BE625248A (fr)

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