BE588164A - Procédé d'obtention d'une pellicule de silicium. - Google Patents

Procédé d'obtention d'une pellicule de silicium.

Info

Publication number
BE588164A
BE588164A BE588164A BE588164A BE588164A BE 588164 A BE588164 A BE 588164A BE 588164 A BE588164 A BE 588164A BE 588164 A BE588164 A BE 588164A BE 588164 A BE588164 A BE 588164A
Authority
BE
Belgium
Prior art keywords
obtaining
silicon film
silicon
film
Prior art date
Application number
BE588164A
Other languages
English (en)
Inventor
Boudart Michel
Immanuel Pollak Peter
Original Assignee
Merck & Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck & Co Inc filed Critical Merck & Co Inc
Publication of BE588164A publication Critical patent/BE588164A/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)
BE588164A 1959-03-25 1960-03-01 Procédé d'obtention d'une pellicule de silicium. BE588164A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US801690A US3170859A (en) 1959-03-25 1959-03-25 Process for the preparation of silicon films

Publications (1)

Publication Number Publication Date
BE588164A true BE588164A (fr) 1960-06-16

Family

ID=25181803

Family Applications (1)

Application Number Title Priority Date Filing Date
BE588164A BE588164A (fr) 1959-03-25 1960-03-01 Procédé d'obtention d'une pellicule de silicium.

Country Status (7)

Country Link
US (1) US3170859A (fr)
BE (1) BE588164A (fr)
CH (1) CH396854A (fr)
DE (1) DE1119837B (fr)
GB (1) GB942201A (fr)
NL (1) NL249150A (fr)
SE (1) SE308299B (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1288869A (fr) * 1961-02-15 1962-03-30 Electronique & Physique Perfectionnements aux méthodes pour la préparation et l'utilisation de composés chimiques, notamment des hydrures, en quantités réglables et dispositifs pour leur mise en application
AT268380B (de) * 1965-01-05 1969-02-10 Egyesuelt Izzolampa Verfahren zur Herstellung von Halbleitergeräten
US3437511A (en) * 1966-04-07 1969-04-08 Us Air Force Metal surfaced with boron and coating of silicon,silicon carbide or titanium nitride
NL6915771A (fr) * 1968-10-30 1970-05-04
FR2555206B1 (fr) * 1983-11-22 1986-05-09 Thomson Csf Procede de depot de silicium amorphe par decomposition thermique a basse temperature et dispositif de mise en oeuvre du procede
IT1198290B (it) * 1986-12-02 1988-12-21 Sgs Microelettronica Spa Metodo di decontaminazione di una camera utilizzata nei processi sotto vuoto di deposizione,attacco o crescita di films di elevata purezza,di particolare applicazione nella tecnologia dei semiconduttori
US5190823A (en) * 1989-07-31 1993-03-02 General Electric Company Method for improving adhesion of synthetic diamond coatings to substrates

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1489724A (en) * 1922-04-28 1924-04-08 Gerald L Wendt Method of producing chemical reactions
GB583142A (en) * 1944-09-29 1946-12-10 Standard Telephones Cables Ltd Improvements in or relating to coating insulating surfaces with metal
US2768061A (en) * 1953-02-26 1956-10-23 Gen Electric Hydrogen reduction method and apparatus
US2945797A (en) * 1956-05-12 1960-07-19 Saint Gobain Manufacture of metals of high purity
US2955966A (en) * 1957-07-03 1960-10-11 Int Standard Electric Corp Manufacture of semiconductor material
US3008897A (en) * 1959-08-07 1961-11-14 Sinclair Refining Co Hydrocarbon demetallization process

Also Published As

Publication number Publication date
GB942201A (en) 1963-11-20
SE308299B (fr) 1969-02-10
DE1119837B (de) 1961-12-21
NL249150A (fr)
US3170859A (en) 1965-02-23
CH396854A (de) 1965-08-15

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