GB978984A - Method and apparatus for the vapour deposition of patterns upon a carrier surface - Google Patents

Method and apparatus for the vapour deposition of patterns upon a carrier surface

Info

Publication number
GB978984A
GB978984A GB28679/63A GB2867963A GB978984A GB 978984 A GB978984 A GB 978984A GB 28679/63 A GB28679/63 A GB 28679/63A GB 2867963 A GB2867963 A GB 2867963A GB 978984 A GB978984 A GB 978984A
Authority
GB
United Kingdom
Prior art keywords
mask
carrier surface
source
semi
slice
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB28679/63A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens Corp
Original Assignee
Siemens and Halske AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens Corp filed Critical Siemens and Halske AG
Publication of GB978984A publication Critical patent/GB978984A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
    • H05K3/143—Masks therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physical Vapour Deposition (AREA)
GB28679/63A 1962-07-20 1963-07-19 Method and apparatus for the vapour deposition of patterns upon a carrier surface Expired GB978984A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1962S0080503 DE1165700C2 (de) 1962-07-20 1962-07-20 Verfahren zum Herstellen von Bauelementen oder Baugruppen

Publications (1)

Publication Number Publication Date
GB978984A true GB978984A (en) 1965-01-01

Family

ID=7508916

Family Applications (1)

Application Number Title Priority Date Filing Date
GB28679/63A Expired GB978984A (en) 1962-07-20 1963-07-19 Method and apparatus for the vapour deposition of patterns upon a carrier surface

Country Status (5)

Country Link
CH (1) CH443427A (cg-RX-API-DMAC7.html)
DE (1) DE1165700C2 (cg-RX-API-DMAC7.html)
FR (1) FR1378052A (cg-RX-API-DMAC7.html)
GB (1) GB978984A (cg-RX-API-DMAC7.html)
NL (1) NL294779A (cg-RX-API-DMAC7.html)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4273812A (en) * 1978-02-01 1981-06-16 Hitachi, Ltd. Method of producing material patterns by evaporating material through a perforated mask having a reinforcing bridge
US4301191A (en) * 1974-10-25 1981-11-17 U.S. Philips Corporation Method of providing a conductor layer pattern having parts which are present at a small separation in the manufacture of semiconductor devices
US4469719A (en) * 1981-12-21 1984-09-04 Applied Magnetics-Magnetic Head Divison Corporation Method for controlling the edge gradient of a layer of deposition material
US4536419A (en) * 1983-03-10 1985-08-20 Hitachi, Ltd. Method for forming tapered films
WO2018166953A1 (de) * 2017-03-14 2018-09-20 Aixtron Se Vorrichtung zum abscheiden einer strukturierten schicht auf einem substrat sowie verfahren zum einrichten der vorrichtung
WO2019129364A1 (en) * 2017-12-29 2019-07-04 Microsoft Technology Licensing, Llc Fabrication process using vapour deposition through a positioned shadow mask
US11479851B2 (en) 2017-03-14 2022-10-25 Aixtron Se Substrate holder arrangement with mask support

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4100313A (en) * 1975-10-28 1978-07-11 Rca Corporation Process for forming an optical waveguide
DE3374790D1 (en) * 1983-03-11 1988-01-14 Hitachi Ltd Method for forming thin films

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4301191A (en) * 1974-10-25 1981-11-17 U.S. Philips Corporation Method of providing a conductor layer pattern having parts which are present at a small separation in the manufacture of semiconductor devices
US4273812A (en) * 1978-02-01 1981-06-16 Hitachi, Ltd. Method of producing material patterns by evaporating material through a perforated mask having a reinforcing bridge
US4469719A (en) * 1981-12-21 1984-09-04 Applied Magnetics-Magnetic Head Divison Corporation Method for controlling the edge gradient of a layer of deposition material
US4536419A (en) * 1983-03-10 1985-08-20 Hitachi, Ltd. Method for forming tapered films
WO2018166953A1 (de) * 2017-03-14 2018-09-20 Aixtron Se Vorrichtung zum abscheiden einer strukturierten schicht auf einem substrat sowie verfahren zum einrichten der vorrichtung
US11396697B2 (en) 2017-03-14 2022-07-26 Aixtron Se Device for separating a structured layer on a substrate, and method for setting up the device
US11479851B2 (en) 2017-03-14 2022-10-25 Aixtron Se Substrate holder arrangement with mask support
WO2019129364A1 (en) * 2017-12-29 2019-07-04 Microsoft Technology Licensing, Llc Fabrication process using vapour deposition through a positioned shadow mask
CN111479947A (zh) * 2017-12-29 2020-07-31 微软技术许可有限责任公司 使用通过被定位的阴影掩模进行气相沉积的制造工艺
US11629430B2 (en) 2017-12-29 2023-04-18 Microsoft Technology Licensing, Llc Fabrication process using vapour deposition through a positioned shadow mask

Also Published As

Publication number Publication date
FR1378052A (fr) 1964-11-13
DE1165700C2 (de) 1964-09-24
CH443427A (de) 1967-09-15
DE1165700B (de) 1964-03-19
NL294779A (cg-RX-API-DMAC7.html)

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