GB1291441A - Methods of coating substrates with photoresists - Google Patents
Methods of coating substrates with photoresistsInfo
- Publication number
- GB1291441A GB1291441A GB4862569A GB4862569A GB1291441A GB 1291441 A GB1291441 A GB 1291441A GB 4862569 A GB4862569 A GB 4862569A GB 4862569 A GB4862569 A GB 4862569A GB 1291441 A GB1291441 A GB 1291441A
- Authority
- GB
- United Kingdom
- Prior art keywords
- compound
- oct
- solvent
- mixture
- electron beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
1291441 Electron beam irradiation apparatus WESTERN ELECTRIC CO Inc 3 Oct 1969 [3 Oct 1968] 48625/69 Heading H1D In a photo-resist process for coating a pattern on a substrate using an electron beam as the hardening radiation, the sensitivity of the photoresist material to electron bombardment is improved by adding to it an organometallic compound or a compound which readily dissociates into free radicals, the metal being from Groups III to V of atomic number greater than 30, the compound amounting to up to 5% and preferably 0À1 to 2% by weight of the photoresist solution; suitable materials on dibutyltin maleate, hexaphenyldilead, tetracyclohexyltin, triphenylbismuth, triphenylstilbene, triphenylarsine, cyclopentadienylthallium, and divinyldibutyltin. The latter may comprise benzil, benzophenone, or 1,4-diphenyl-1,3-butadiene forming preferably about 1% and not more than 5% of the solution. The photoresist material may be a polyvinyl cinnamate in a solvent comprising a mixture of chlorobenzene and cyclohexone, or alternatively a polymerized isoprene dimer in a solvent comprising a mixture of ethylbenzene, mixed xylenes and methylcellosolve.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US76486668A | 1968-10-03 | 1968-10-03 | |
US76486768A | 1968-10-03 | 1968-10-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1291441A true GB1291441A (en) | 1972-10-04 |
Family
ID=27117530
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB4862569A Expired GB1291441A (en) | 1968-10-03 | 1969-10-03 | Methods of coating substrates with photoresists |
Country Status (5)
Country | Link |
---|---|
BE (1) | BE739834A (en) |
DE (1) | DE1949502C3 (en) |
GB (1) | GB1291441A (en) |
NL (1) | NL6915006A (en) |
SE (1) | SE361366B (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2459156A1 (en) * | 1974-04-22 | 1975-11-06 | Ibm | METHOD OF MANUFACTURING A PHOTO LACQUER MASK ON A SEMICONDUCTOR SUBSTRATE |
EP3177966B1 (en) * | 2014-08-06 | 2019-03-13 | The University of Manchester | Electron beam resist composition |
US11143961B1 (en) * | 2015-09-30 | 2021-10-12 | The University Of Manchester | Resist composition |
CN113568271A (en) * | 2020-07-02 | 2021-10-29 | 台湾积体电路制造股份有限公司 | Method of manufacturing semiconductor device and pattern forming method |
-
1969
- 1969-09-29 SE SE1335669A patent/SE361366B/xx unknown
- 1969-10-01 DE DE19691949502 patent/DE1949502C3/en not_active Expired
- 1969-10-03 NL NL6915006A patent/NL6915006A/xx unknown
- 1969-10-03 BE BE739834D patent/BE739834A/en unknown
- 1969-10-03 GB GB4862569A patent/GB1291441A/en not_active Expired
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2459156A1 (en) * | 1974-04-22 | 1975-11-06 | Ibm | METHOD OF MANUFACTURING A PHOTO LACQUER MASK ON A SEMICONDUCTOR SUBSTRATE |
EP3177966B1 (en) * | 2014-08-06 | 2019-03-13 | The University of Manchester | Electron beam resist composition |
US10234764B2 (en) | 2014-08-06 | 2019-03-19 | The University Of Manchester | Electron beam resist composition |
EP3561596A1 (en) * | 2014-08-06 | 2019-10-30 | The University Of Manchester | Antiscattering resist composition and method for performing lithography |
US10613441B2 (en) | 2014-08-06 | 2020-04-07 | The University Of Manchester | Electron beam resist composition |
US11143961B1 (en) * | 2015-09-30 | 2021-10-12 | The University Of Manchester | Resist composition |
CN113568271A (en) * | 2020-07-02 | 2021-10-29 | 台湾积体电路制造股份有限公司 | Method of manufacturing semiconductor device and pattern forming method |
Also Published As
Publication number | Publication date |
---|---|
DE1949502B2 (en) | 1974-05-30 |
SE361366B (en) | 1973-10-29 |
BE739834A (en) | 1970-03-16 |
NL6915006A (en) | 1970-04-07 |
DE1949502C3 (en) | 1975-01-16 |
DE1949502A1 (en) | 1970-04-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PLNP | Patent lapsed through nonpayment of renewal fees |