GB971017A - Process for making thin semi-conductive films - Google Patents

Process for making thin semi-conductive films

Info

Publication number
GB971017A
GB971017A GB27355/62A GB2735562A GB971017A GB 971017 A GB971017 A GB 971017A GB 27355/62 A GB27355/62 A GB 27355/62A GB 2735562 A GB2735562 A GB 2735562A GB 971017 A GB971017 A GB 971017A
Authority
GB
United Kingdom
Prior art keywords
semi
elements
cadmium
substrate
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB27355/62A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NCR Voyix Corp
National Cash Register Co
Original Assignee
NCR Corp
National Cash Register Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US135046A external-priority patent/US3287143A/en
Application filed by NCR Corp, National Cash Register Co filed Critical NCR Corp
Publication of GB971017A publication Critical patent/GB971017A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G1/00—Methods of preparing compounds of metals not covered by subclasses C01B, C01C, C01D, or C01F, in general
    • C01G1/12—Sulfides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C11/00—Alloys based on lead
    • C22C11/02—Alloys based on lead with an alkali or an alkaline earth metal as the next major constituent
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08207—Selenium-based
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H01J9/22—Applying luminescent coatings
    • H01J9/221—Applying luminescent coatings in continuous layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02557—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/0256—Selenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/127—Active materials comprising only Group IV-VI or only Group II-IV-VI chalcogenide materials, e.g. PbSnTe
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/84—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by UV- or VIS- data
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/28—Other inorganic materials
    • C03C2217/287—Chalcogenides
    • C03C2217/288—Sulfides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/28—Other inorganic materials
    • C03C2217/287—Chalcogenides
    • C03C2217/289—Selenides, tellurides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/11—Deposition methods from solutions or suspensions
    • C03C2218/112—Deposition methods from solutions or suspensions by spraying
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Light Receiving Elements (AREA)
  • Chemically Coating (AREA)
GB27355/62A 1961-08-30 1962-07-17 Process for making thin semi-conductive films Expired GB971017A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US135036A US3148084A (en) 1961-08-30 1961-08-30 Process for making conductive film
US135046A US3287143A (en) 1961-08-30 1961-08-30 Gas-tight refractory article and method of making same

Publications (1)

Publication Number Publication Date
GB971017A true GB971017A (en) 1964-09-23

Family

ID=26832924

Family Applications (1)

Application Number Title Priority Date Filing Date
GB27355/62A Expired GB971017A (en) 1961-08-30 1962-07-17 Process for making thin semi-conductive films

Country Status (6)

Country Link
US (1) US3148084A (instruction)
BE (1) BE621339A (instruction)
CH (1) CH414569A (instruction)
DE (1) DE1421903B2 (instruction)
GB (1) GB971017A (instruction)
NL (2) NL130859C (instruction)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2168888A1 (instruction) * 1972-01-25 1973-09-07 Soschin Naum
FR2345816A1 (fr) * 1976-03-26 1977-10-21 Photon Power Inc Procede et composition destines a former un film contenant du sulfure de cadmium
DE2643590A1 (de) * 1976-09-28 1978-03-30 Battelle Development Corp Photovoltaische zelle
EP0002109A1 (en) * 1977-11-15 1979-05-30 Imperial Chemical Industries Plc A method for the preparation of thin photoconductive films and of solar cells employing said thin photoconductive films
WO2007147184A3 (de) * 2006-06-22 2008-04-24 Isovolta Verfahren zum herstellen von photoaktiven schichten sowie bauelemente umfassend diese schicht(en)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3357857A (en) * 1964-05-08 1967-12-12 Philips Corp Method of passivating supports for semiconductor sulphides, selenides and tellurides
US3494779A (en) * 1965-09-29 1970-02-10 Ncr Co Oxygen-dominated phosphor films
US3486951A (en) * 1967-06-16 1969-12-30 Corning Glass Works Method of manufacturing semiconductor devices
DE2201585C3 (de) * 1972-01-13 1981-12-10 Kadomskaja, geb. Jankuš, Natella Petrovna, Sverdlovsk Verfahren zum Herstellen von Leuchtschirmen
US3902920A (en) * 1972-11-03 1975-09-02 Baldwin Co D H Photovoltaic cell
USRE30147E (en) * 1974-01-08 1979-11-13 Photon Power, Inc. Method of coating a glass ribbon on a liquid float bath
IN155734B (instruction) * 1974-09-23 1985-03-02 Photon Power Inc
FR2286508A1 (fr) * 1974-09-24 1976-04-23 Baldwin Cy Dh Cellule photovoltaique et son procede de realisation par croissance microcristalline
US4104420A (en) * 1975-08-25 1978-08-01 Photon Power, Inc. Photovoltaic cell
US4265933A (en) * 1975-12-30 1981-05-05 Photon Power, Inc. Photovoltaic cell
JPS5437077A (en) * 1977-08-02 1979-03-19 Agency Of Ind Science & Technol Chemical evaporation method and apparatus for same
US4178395A (en) * 1977-11-30 1979-12-11 Photon Power, Inc. Methods for improving solar cell open circuit voltage
US4224355A (en) * 1978-03-15 1980-09-23 Photon Power, Inc. Method for quality film formation
US4239809A (en) * 1978-03-15 1980-12-16 Photon Power, Inc. Method for quality film formation
GB2016802B (en) * 1978-03-16 1982-09-08 Chevron Res Thin film photovoltaic cells
CA1165612A (en) * 1980-05-08 1984-04-17 John B. Mooney Electrophotographic photoconductor including a major amount of cds and a minor amount of zns
JPS5846195B2 (ja) * 1980-09-09 1983-10-14 日本電信電話株式会社 密着形イメ−ジセンサの製造方法
FR2498951B1 (fr) * 1981-02-03 1986-03-28 Radiation Monitoring Devices Procede de fabrication d'une couche mince
US4327119A (en) * 1981-02-03 1982-04-27 Radiation Monitoring Devices, Inc. Method to synthesize and produce thin films by spray pyrolysis
US4338362A (en) * 1981-02-03 1982-07-06 Radiation Monitoring Devices, Inc. Method to synthesize and produce thin films by spray pyrolysis
US4336285A (en) * 1981-02-03 1982-06-22 Radiation Monitoring Devices, Inc. Method to synthesize and produce thin films by spray pyrolysis
US4343881A (en) * 1981-07-06 1982-08-10 Savin Corporation Multilayer photoconductive assembly with intermediate heterojunction
DE3672285D1 (de) * 1985-01-17 1990-08-02 Matsushita Electric Industrial Co Ltd Verfahren zur bildung duenner metallsulfidfilme.
US4855203A (en) * 1987-08-31 1989-08-08 Xerox Corporation Imaging members with photogenerating compositions obtained by solution processes
JP2615469B2 (ja) * 1988-04-21 1997-05-28 松下電器産業株式会社 金属硫化物薄膜の製造方法
US5202214A (en) * 1989-12-19 1993-04-13 Canon Kabushiki Kaisha Process of producing-electrophotographic photosensitive member
US6537845B1 (en) * 2001-08-30 2003-03-25 Mccandless Brian E. Chemical surface deposition of ultra-thin semiconductors
WO2006108425A1 (en) * 2005-04-14 2006-10-19 Tallinn University Of Technology Method of preparing zinc oxide nanorods on a substrate by chemical spray pyrolysis
US9252318B2 (en) 2008-03-05 2016-02-02 Hanergy Hi-Tech Power (Hk) Limited Solution containment during buffer layer deposition
US20100087015A1 (en) 2008-03-05 2010-04-08 Global Solar Energy, Inc. Feedback for buffer layer deposition
DE112009000532T5 (de) * 2008-03-05 2011-03-10 Global Solar Energy, Inc., Tuscon Heizgerät für Pufferschichtaufbringung
DE212009000031U1 (de) * 2008-03-05 2010-11-04 Global Solar Energy, Inc., Tuscon Vorrichtung zum Aufbringen einer dünnschichtigen Pufferschicht auf einen flexiblen Träger
US8062922B2 (en) * 2008-03-05 2011-11-22 Global Solar Energy, Inc. Buffer layer deposition for thin-film solar cells
JP5469966B2 (ja) * 2009-09-08 2014-04-16 東京応化工業株式会社 塗布装置及び塗布方法
JP5719546B2 (ja) * 2009-09-08 2015-05-20 東京応化工業株式会社 塗布装置及び塗布方法
US7838403B1 (en) * 2009-09-14 2010-11-23 International Business Machines Corporation Spray pyrolysis for large-scale production of chalcopyrite absorber layer in photovoltaic devices
CN106232867B (zh) * 2014-04-18 2019-01-08 株式会社尼康 膜形成设备、基板处理设备和装置制造方法
CN111630636B (zh) * 2018-01-29 2024-03-22 东京毅力科创株式会社 基片干燥装置、基片干燥方法和存储介质

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2659682A (en) * 1948-08-05 1953-11-17 Continental Electric Company Apparatus and method for making a photoconductive element
NL97512C (instruction) * 1955-12-08
US2997409A (en) * 1959-11-04 1961-08-22 Santa Barbara Res Ct Method of production of lead selenide photodetector cells

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2168888A1 (instruction) * 1972-01-25 1973-09-07 Soschin Naum
FR2345816A1 (fr) * 1976-03-26 1977-10-21 Photon Power Inc Procede et composition destines a former un film contenant du sulfure de cadmium
DE2643590A1 (de) * 1976-09-28 1978-03-30 Battelle Development Corp Photovoltaische zelle
EP0002109A1 (en) * 1977-11-15 1979-05-30 Imperial Chemical Industries Plc A method for the preparation of thin photoconductive films and of solar cells employing said thin photoconductive films
WO2007147184A3 (de) * 2006-06-22 2008-04-24 Isovolta Verfahren zum herstellen von photoaktiven schichten sowie bauelemente umfassend diese schicht(en)

Also Published As

Publication number Publication date
CH414569A (fr) 1966-06-15
BE621339A (instruction) 1900-01-01
NL130859C (instruction) 1900-01-01
DE1421903A1 (de) 1968-11-07
NL282696A (instruction) 1900-01-01
US3148084A (en) 1964-09-08
DE1421903B2 (de) 1971-06-03

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