GB970456A - Improvements in or relating to processes for the preparation of semiconductor arrangements - Google Patents

Improvements in or relating to processes for the preparation of semiconductor arrangements

Info

Publication number
GB970456A
GB970456A GB414763A GB414763A GB970456A GB 970456 A GB970456 A GB 970456A GB 414763 A GB414763 A GB 414763A GB 414763 A GB414763 A GB 414763A GB 970456 A GB970456 A GB 970456A
Authority
GB
United Kingdom
Prior art keywords
semi
support
conductor
substrate
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB414763A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Publication of GB970456A publication Critical patent/GB970456A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB414763A 1962-02-02 1963-02-01 Improvements in or relating to processes for the preparation of semiconductor arrangements Expired GB970456A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1962S0077852 DE1236481B (de) 1962-02-02 1962-02-02 Verfahren zur Herstellen einer Halbleiteranordnung durch Abscheiden des Halbleiterstoffes aus der Gasphase

Publications (1)

Publication Number Publication Date
GB970456A true GB970456A (en) 1964-09-23

Family

ID=7507071

Family Applications (1)

Application Number Title Priority Date Filing Date
GB414763A Expired GB970456A (en) 1962-02-02 1963-02-01 Improvements in or relating to processes for the preparation of semiconductor arrangements

Country Status (5)

Country Link
CH (1) CH408876A (ja)
DE (1) DE1236481B (ja)
GB (1) GB970456A (ja)
NL (1) NL288409A (ja)
SE (1) SE325641B (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3372671A (en) * 1965-05-26 1968-03-12 Westinghouse Electric Corp Apparatus for producing vapor growth of silicon crystals
US4587928A (en) * 1975-12-24 1986-05-13 Tokyo Shibaura Electric Co., Ltd. Apparatus for producing a semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL187414C (nl) * 1978-04-21 1991-09-16 Philips Nv Werkwijze voor het aanbrengen van een epitaxiale laag.

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE943422C (de) * 1949-04-02 1956-05-17 Licentia Gmbh Gesteuerter Trockengleichrichter, insbesondere mit Germanium, Silizium oder Siliziumkarbid als halbleitender Substanz
DE853926C (de) * 1949-04-02 1952-10-30 Licentia Gmbh Verfahren zum Herstellen von Trockengleichrichtern mit Silizium als halbleitender Substanz
BE509317A (ja) * 1951-03-07 1900-01-01
DE950848C (de) * 1953-03-19 1956-10-18 Heraeus Gmbh W C Verfahren zur Herstellung von reinem Silicium
DE1057845B (de) * 1954-03-10 1959-05-21 Licentia Gmbh Verfahren zur Herstellung von einkristallinen halbleitenden Verbindungen
DE966471C (de) * 1954-07-14 1957-08-08 Heraeus Gmbh W C Verfahren zur Herstellung von reinem Silicium
DE1063870B (de) * 1956-06-28 1959-08-20 Gustav Weissenberg Verfahren und Vorrichtung zum tiegellosen Zuechten von Einkristallen aus hochreinem Silicium oder Germanium

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3372671A (en) * 1965-05-26 1968-03-12 Westinghouse Electric Corp Apparatus for producing vapor growth of silicon crystals
US4587928A (en) * 1975-12-24 1986-05-13 Tokyo Shibaura Electric Co., Ltd. Apparatus for producing a semiconductor device

Also Published As

Publication number Publication date
CH408876A (de) 1966-03-15
SE325641B (ja) 1970-07-06
NL288409A (ja)
DE1236481B (de) 1967-03-16

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