GB1019080A - Process for the production of semiconductor assemblies - Google Patents

Process for the production of semiconductor assemblies

Info

Publication number
GB1019080A
GB1019080A GB3093763A GB3093763A GB1019080A GB 1019080 A GB1019080 A GB 1019080A GB 3093763 A GB3093763 A GB 3093763A GB 3093763 A GB3093763 A GB 3093763A GB 1019080 A GB1019080 A GB 1019080A
Authority
GB
United Kingdom
Prior art keywords
semi
carrier
conductor
support
halogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3093763A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Publication of GB1019080A publication Critical patent/GB1019080A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

<PICT:1019080/C6-C7/1> In producing a semi-conductor assembly, semi-conductor material is transferred from the upper surface of a support 2, Fig. 1, heated at 3 to the lower surface of a semi-conductor carrier 1, the transfer being effected by means of a gaseous atmosphere free from H2 and hydrogen halides but containing a halogen and/or a hydrogen-free halogen compound which forms a gaseous halogen compound with the semi-conductor material from the upper surface of the support, the compound then decomposing to deposit the semi-conductor material on the lower surface of the carrier. One or more layers of semi-conductor material may be deposited. The gaseous halogen or halogen atmosphere may be diluted with argon. Specific examples are for depositing (a) Si on Si e.g. using SiCl4 or Cl2, (b) GaAs on GaAs, (c) GaAs on Ge, (d) ZnS on ZnS, (e) ZnS on Si, (f) depositing Ge, (g) depositing AIIIBV or AIIBVI compounds. Depositions (b), (c), (d) and (e) employ I vapour. To prevent removal of material from the upper side of the semi-conductor carrier member, it may be provided with a cover of quartz, SiC, BN or Al2O3 or may be masked by reacting the upper side with O2, water vapour or CH2Cl2 to produce the oxide or carbide. The lower surface of the carrier may be polished plane. Spacers may be employed between the support and carrier, Fig. 4 (not shown). By the process, junctions between layers of different conductivity and/or different conductivity type may be produced. Figs. 5 and 6 (not shown) illustrate apparatus where assemblies such as shown in Fig. 1 are supported on inductively heated members 14 and 18 and where gases are supplied to and removed from the apparatus at 10 and 11. The reaction vessels may be surrounded by aluminium reflectors. Prior to deposition, the semi-conductor carrier and the support may be cleaned by heating in vacuo or in H2. The deposition may be carried out under reduced pressure, e.g. Si may be deposited using SiCl4 at 0.1 atmosphere.ALSO:<PICT:1019080/C1/1> In producing a semi-conductor assembly, semi-conductor material is transferred from the upper surface of a support 2, Fig. 1, heated at 3 to the lower surface of a semi-conductor carrier 7, the transfer being effected by means of a gaseous atmosphere free from H2 and hydrogen halides but containing a halogen and/or a hydrogen-free halogen compound which forms a gaseous halogen compound with the semi-conductor material from the upper surface of the support, the compound then decomposing to deposit the semi-conductor material on the lower surface of the carrier. One or more layers of semi-conductor material may be deposited. The gaseous halogen or halogen atmosphere may be diluted with argon. Specific examples are for depositing: (a) Si on Si e.g. using SiCl4 or Cl2 (b) GaAs on GaAs (c) GaAs on Ge (d) ZnS on ZnS (e) ZnS on Si (f) depositing Ge (g) depositing AIII BV or AII BVI compounds. Depositions (b), (c), (d) and (e) employ I vapour. To prevent removal of material from the upper side of the semi-conductor carrier member, it may be provided with a cover of quartz, SiC, BN or Al2O3 or may be masked by reacting the upper side with O2, water vapour or CH2Cl2 to produce the oxide or carbide. The lower surface of the carrier may be polished plane. Spacers may be employed between the support and carrier (Fig. 4, not shown). By the process, junctions between layers of different conductivity and/or different conductivity type may be produced. Figs. 5 and 6 (not shown) illustrate apparatus where assemblies such as shown in Fig. 1 are supported on inductively heated members 14 and 18 and where gases are supplied to and removed from the apparatus at 10 and 11. The reaction vessels may be surrounded by aluminium reflectors. Prior to deposition, the semi-conductor carrier and the support may be cleaned by heating in vacuo or in H2. The deposition may be carried out under reduced pressure, e.g. Si may be deposited using SiCl4 at 0.1 atmosphere.
GB3093763A 1962-08-23 1963-08-06 Process for the production of semiconductor assemblies Expired GB1019080A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0081056 1962-08-23

Publications (1)

Publication Number Publication Date
GB1019080A true GB1019080A (en) 1966-02-02

Family

ID=37434274

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3093763A Expired GB1019080A (en) 1962-08-23 1963-08-06 Process for the production of semiconductor assemblies

Country Status (5)

Country Link
CH (1) CH421303A (en)
DE (1) DE1444525B2 (en)
FR (1) FR1364522A (en)
GB (1) GB1019080A (en)
NL (1) NL296877A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1238105B (en) * 1963-07-17 1967-04-06 Siemens Ag Process for the production of pn junctions in silicon
US3428500A (en) * 1964-04-25 1969-02-18 Fujitsu Ltd Process of epitaxial deposition on one side of a substrate with simultaneous vapor etching of the opposite side
FR2191271B1 (en) * 1972-06-29 1977-07-22 Comp Generale Electricite

Also Published As

Publication number Publication date
DE1444525A1 (en) 1968-12-12
NL296877A (en)
FR1364522A (en) 1964-06-19
DE1444525B2 (en) 1971-06-09
CH421303A (en) 1966-09-30

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