GB958537A - A method of alloy treatment of semiconductor devices - Google Patents
A method of alloy treatment of semiconductor devicesInfo
- Publication number
- GB958537A GB958537A GB3777761A GB3777761A GB958537A GB 958537 A GB958537 A GB 958537A GB 3777761 A GB3777761 A GB 3777761A GB 3777761 A GB3777761 A GB 3777761A GB 958537 A GB958537 A GB 958537A
- Authority
- GB
- United Kingdom
- Prior art keywords
- gas
- hot
- cooling
- oct
- seconds
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 239000000956 alloy Substances 0.000 title 1
- 229910045601 alloy Inorganic materials 0.000 title 1
- 239000007789 gas Substances 0.000 abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 238000001816 cooling Methods 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 239000002826 coolant Substances 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
- C23C2/34—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor characterised by the shape of the material to be treated
- C23C2/36—Elongated material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4394260 | 1960-10-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB958537A true GB958537A (en) | 1964-05-21 |
Family
ID=12677736
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB3777761A Expired GB958537A (en) | 1960-10-31 | 1961-10-20 | A method of alloy treatment of semiconductor devices |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE1177745B (de) |
GB (1) | GB958537A (de) |
NL (2) | NL120935C (de) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1063870B (de) * | 1956-06-28 | 1959-08-20 | Gustav Weissenberg | Verfahren und Vorrichtung zum tiegellosen Zuechten von Einkristallen aus hochreinem Silicium oder Germanium |
FR1165567A (fr) * | 1956-11-29 | 1958-10-27 | Thomson Houston Comp Francaise | Perfectionnements aux transistrons à jonctions |
-
0
- NL NL270264D patent/NL270264A/xx unknown
- NL NL120935D patent/NL120935C/xx active
-
1961
- 1961-10-20 GB GB3777761A patent/GB958537A/en not_active Expired
- 1961-10-31 DE DES76499A patent/DE1177745B/de active Pending
Also Published As
Publication number | Publication date |
---|---|
DE1177745B (de) | 1964-09-10 |
NL120935C (de) | |
NL270264A (de) |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1027525A (de) | ||
GB958537A (en) | A method of alloy treatment of semiconductor devices | |
ES323142A1 (es) | Procedimiento para enriquecer el mineral de titanio mediante acido clorhidrico. | |
NL279828A (de) | ||
GB1281298A (en) | IMPROVEMENTS IN OR RELATING TO THE PRODUCTION OF A PROTECTIVE LAYER OF SiO2 ON THE SURFACE OF SEMICONDUCTOR PLATES | |
GB967901A (en) | Improvements in and relating to nuclear reactor installations | |
GB1418400A (en) | Method and apparatus for cooling steel | |
GB855382A (en) | Method of producing a p-n junction in a crystalline semiconductor | |
US3680199A (en) | Alloying method | |
JPS5236468A (en) | Shallow diffusion method | |
GB1032071A (en) | Improvements in or relating to methods and apparatus for manufacturing bodies of semiconductor material | |
GB953339A (en) | Semi-conductor component with a p-n junction and cooled by a peltier cell | |
GB1266380A (de) | ||
GB1038818A (en) | A process for the thermal treatment of monocrystalline semiconductor material | |
GB851346A (en) | Process of nitriding hardenable steel | |
GB984141A (en) | Improvements in or relating to methods of alloying to semiconductor bodies | |
GB1321128A (en) | Alloy diode characteristics control method | |
GB820289A (en) | Improvements in or relating to the electrolytic treatment of semi-conductor material | |
GB815335A (en) | Improvements in or relating to processes for the manufacture of alloy type semi-conductor rectifiers and transistors | |
GB895239A (en) | A method of making p-n junctions with silicon | |
GB998010A (en) | Improvements in or relating to methods of manufacturing semiconductor devices | |
GB850157A (en) | Improvements in and relating to vacuum soldering- and annealing-furnaces | |
GB1323025A (en) | Impurity diffusion process employing wafers made of desired impurity as impurity sources | |
POMAZANOV et al. | Thermoelectric cooling by means of heat from low-grade sources(Method for reducing temperature differences between thermocouple junctions in semiconductor thermoelectric generator) | |
GB1088052A (en) | Improvements in and relating to the bonding of dissimilar metals to one another |