GB998010A - Improvements in or relating to methods of manufacturing semiconductor devices - Google Patents

Improvements in or relating to methods of manufacturing semiconductor devices

Info

Publication number
GB998010A
GB998010A GB3752761A GB3752761A GB998010A GB 998010 A GB998010 A GB 998010A GB 3752761 A GB3752761 A GB 3752761A GB 3752761 A GB3752761 A GB 3752761A GB 998010 A GB998010 A GB 998010A
Authority
GB
United Kingdom
Prior art keywords
aluminium
pellets
wafer
tin
jig
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3752761A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB998010A publication Critical patent/GB998010A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/02—Making non-ferrous alloys by melting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body

Abstract

998,010. Semi-conductor devices. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. Oct. 19, 1961 [Oct. 22, 1960], No. 37527/61. Heading H1K. A semi-conductor device is made by alloying a carrier metal free of aluminium to a semiconductor body in the presence of aluminium vapour generated by heating a source of elemental aluminium or aluminium alloy adjacent the body to 1000-1400‹ C. The process, which results in the formation of a molten alloy zone on the surface into which some of the aluminium is transferred, is carried out in vacuum or in an inert or reducing atmosphere. Suitable carrier materials for use with germanium are indium, gold, lead and bismuth, while gold, tin and indium are suitable for use with silicon. In one embodiment (Fig. 2) a system consisting of an N-type silicon wafer 1, a pellet 2 of pure tin, and powdered aluminium 5, assembled in a graphite jig 3 is heated to 1150‹ C. for S minutes in a flow of equal volumes of dry oxygen-free hydrogen and nitrogen. After removal from the jig the wafer is etched in a standard acid mixture. In an alternative method pellets of tin are first alloyed to an N-type silicon wafer 11 (Fig. 3) by heating at 1000‹ C. in hydrogen. Subsequently aluminium powder 15 in a binder is attached to one of the pellets and the assembly heated in jig 16 to 1100‹ C. for 5 minutes in nitrogen to form PN junctions beneath each pellet. The wafer is then divided between the pellets to form three diodes. The gradual aluminium diffused junctions formed by the above processes may be sharpened by briefly raising the alloying temperature before finally cooling.
GB3752761A 1960-10-22 1961-10-19 Improvements in or relating to methods of manufacturing semiconductor devices Expired GB998010A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL257147 1960-10-22

Publications (1)

Publication Number Publication Date
GB998010A true GB998010A (en) 1965-07-14

Family

ID=19752651

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3752761A Expired GB998010A (en) 1960-10-22 1961-10-19 Improvements in or relating to methods of manufacturing semiconductor devices

Country Status (5)

Country Link
CH (1) CH415854A (en)
DE (1) DE1167538B (en)
ES (1) ES271354A1 (en)
GB (1) GB998010A (en)
NL (1) NL257147A (en)

Also Published As

Publication number Publication date
CH415854A (en) 1966-06-30
NL257147A (en)
ES271354A1 (en) 1962-01-01
DE1167538B (en) 1964-04-09

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