CH415854A - Method for producing an aluminum-containing alloy contact on a semiconductor body - Google Patents

Method for producing an aluminum-containing alloy contact on a semiconductor body

Info

Publication number
CH415854A
CH415854A CH1208261A CH1208261A CH415854A CH 415854 A CH415854 A CH 415854A CH 1208261 A CH1208261 A CH 1208261A CH 1208261 A CH1208261 A CH 1208261A CH 415854 A CH415854 A CH 415854A
Authority
CH
Switzerland
Prior art keywords
aluminum
producing
semiconductor body
containing alloy
alloy contact
Prior art date
Application number
CH1208261A
Other languages
German (de)
Inventor
Kooi Else
Daniel Van Der Meer Aant Bouwe
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH415854A publication Critical patent/CH415854A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/02—Making non-ferrous alloys by melting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
CH1208261A 1960-10-22 1961-10-19 Method for producing an aluminum-containing alloy contact on a semiconductor body CH415854A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL257147 1960-10-22

Publications (1)

Publication Number Publication Date
CH415854A true CH415854A (en) 1966-06-30

Family

ID=19752651

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1208261A CH415854A (en) 1960-10-22 1961-10-19 Method for producing an aluminum-containing alloy contact on a semiconductor body

Country Status (5)

Country Link
CH (1) CH415854A (en)
DE (1) DE1167538B (en)
ES (1) ES271354A1 (en)
GB (1) GB998010A (en)
NL (1) NL257147A (en)

Also Published As

Publication number Publication date
GB998010A (en) 1965-07-14
ES271354A1 (en) 1962-01-01
DE1167538B (en) 1964-04-09
NL257147A (en)

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