GB948997A - Method of preparing monocrystalline layers - Google Patents

Method of preparing monocrystalline layers

Info

Publication number
GB948997A
GB948997A GB9534/62A GB953462A GB948997A GB 948997 A GB948997 A GB 948997A GB 9534/62 A GB9534/62 A GB 9534/62A GB 953462 A GB953462 A GB 953462A GB 948997 A GB948997 A GB 948997A
Authority
GB
United Kingdom
Prior art keywords
diaphragm
carrier
substrate
deposited
materials
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB9534/62A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens Corp
Original Assignee
Siemens and Halske AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens Corp filed Critical Siemens and Halske AG
Publication of GB948997A publication Critical patent/GB948997A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C30B23/005—Controlling or regulating flux or flow of depositing species or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
GB9534/62A 1961-03-14 1962-03-13 Method of preparing monocrystalline layers Expired GB948997A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES72962A DE1262979B (de) 1961-03-14 1961-03-14 Verfahren und Vorrichtung zum Herstellen einkristalliner Schichten durch Aufdampfen

Publications (1)

Publication Number Publication Date
GB948997A true GB948997A (en) 1964-02-05

Family

ID=7503587

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9534/62A Expired GB948997A (en) 1961-03-14 1962-03-13 Method of preparing monocrystalline layers

Country Status (5)

Country Link
CH (1) CH395680A (enExample)
DE (1) DE1262979B (enExample)
FR (1) FR1317607A (enExample)
GB (1) GB948997A (enExample)
NL (1) NL275889A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1298512B (de) * 1964-03-13 1969-07-03 Telefunken Patent Einrichtung zum Aufdampfen einkristalliner Schichten auf Unterlagen
US3514320A (en) * 1969-02-10 1970-05-26 William H Vaughan Method of forming single crystal films by nonepitaxial growth

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE514927A (enExample) * 1952-01-22
DE1057845B (de) * 1954-03-10 1959-05-21 Licentia Gmbh Verfahren zur Herstellung von einkristallinen halbleitenden Verbindungen
NL215006A (enExample) * 1956-03-05
DE1054802B (de) * 1956-03-05 1959-04-09 Westinghouse Electric Corp Verfahren zur Verdampfung von Stoffen, insbesondere zur Erzeugung der UEbergangszonen (junctions) von Transistoren

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1298512B (de) * 1964-03-13 1969-07-03 Telefunken Patent Einrichtung zum Aufdampfen einkristalliner Schichten auf Unterlagen
US3514320A (en) * 1969-02-10 1970-05-26 William H Vaughan Method of forming single crystal films by nonepitaxial growth

Also Published As

Publication number Publication date
DE1262979B (de) 1968-03-14
FR1317607A (enExample) 1963-05-08
NL275889A (enExample)
CH395680A (de) 1965-07-15

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